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Class Information
Number: 257/E21.108
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.101. This subclass is substantially the same in scope as ECLA classification H01L21/205C.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.112 Deposition on a semiconductor substrate not being group iii-v compound (epo) 134
257/E21.113 Deposition on an insulating or a metallic substrate (epo) 101
257/E21.11 Doping the epitaxial deposit (epo) 101
257/E21.109 Using molecular beam technique (epo) 33


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8709918 Method for selective deposition of a semiconductor material Apr. 29, 2014
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8709957 Spalling utilizing stressor layer portions Apr. 29, 2014
8703587 Method of manufacturing of a semi-conductor element and semi-conductor element Apr. 22, 2014
8691671 Planar nonpolar group-III nitride films grown on miscut substrates Apr. 8, 2014
8659031 Method of producing template for epitaxial growth and nitride semiconductor device Feb. 25, 2014
8652958 Vertical deep ultraviolet light emitting diodes Feb. 18, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8647967 Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same Feb. 11, 2014
8648328 Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces Feb. 11, 2014
8633045 Method for making epitaxial structure Jan. 21, 2014
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8592298 Fabrication of floating guard rings using selective regrowth Nov. 26, 2013
8592871 Nitride semiconductor device and method of manufacturing nitride semiconductor device Nov. 26, 2013
8564014 Ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same Oct. 22, 2013
8563395 Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof Oct. 22, 2013
8524581 GaN epitaxy with migration enhancement and surface energy modification Sep. 3, 2013
8513039 Method for fabricating semiconductor lighting chip Aug. 20, 2013
8507304 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) Aug. 13, 2013
8501600 Methods for depositing germanium-containing layers Aug. 6, 2013
8502310 III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial wafer Aug. 6, 2013
8450192 Growth of planar, non-polar, group-III nitride films May. 28, 2013
8440549 Compound semiconductor device including aln layer of controlled skewness May. 14, 2013
8435820 Patterned substrate for hetero-epitaxial growth of group-III nitride film May. 7, 2013
8420543 Method for treating the dislocation in a GaN-containing semiconductor layer Apr. 16, 2013
8410524 Group III nitride semiconductor device and epitaxial substrate Apr. 2, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8410511 Methods for high temperature processing of epitaxial chips Apr. 2, 2013
8383439 Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method Feb. 26, 2013
8368183 Nitride semiconductor device Feb. 5, 2013
8349078 Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device Jan. 8, 2013
8349711 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement Jan. 8, 2013
8349629 Semiconductor light-emitting element and method of manufacturing same Jan. 8, 2013
8334154 Method for the production of quantum dots embedded in a matrix, and quantum dots embedded in a matrix produced using the method Dec. 18, 2012
8329511 Nitride crystal with removable surface layer and methods of manufacture Dec. 11, 2012
8294245 GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture Oct. 23, 2012
8283239 Process for growth of low dislocation density GaN Oct. 9, 2012
8273592 Method of manufacturing group-III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp Sep. 25, 2012
8264005 Compound semiconductor device including AIN layer of controlled skewness Sep. 11, 2012
8264006 Compound semiconductor device including AIN layer of controlled skewness Sep. 11, 2012
8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal Sep. 4, 2012
8257993 Light emitting device and method of fabricating the same Sep. 4, 2012
8252662 Method and structure for manufacture of light emitting diode devices using bulk GaN Aug. 28, 2012
8216869 Group III nitride semiconductor and a manufacturing method thereof Jul. 10, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8202750 Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer Jun. 19, 2012
8193016 Semiconductor laser device and method of manufacturing the same Jun. 5, 2012
8193545 Nitride semiconductor light emitting device and fabrication method thereof Jun. 5, 2012
8188573 Nitride semiconductor structure May. 29, 2012
8173469 Fabrication method of light emitting device May. 8, 2012

1 2 3 4 5 6 7










 
 
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