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Class Information
Number: 257/E21.108
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.101. This subclass is substantially the same in scope as ECLA classification H01L21/205C.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7399687 |
Substrate of gallium nitride single crystal and process for producing the same |
Jul. 15, 2008 |
| 7374960 |
Stress measurement and stress balance in films |
May. 20, 2008 |
| 7288430 |
Method of fabricating heteroepitaxial microstructures |
Oct. 30, 2007 |
| 7288423 |
In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition |
Oct. 30, 2007 |
| 7250360 |
Single step, high temperature nucleation process for a lattice mismatched substrate |
Jul. 31, 2007 |
| 7226849 |
Method of producing integrated semiconductor components on a semiconductor substrate |
Jun. 5, 2007 |
| 7132351 |
Method of fabricating a compound semiconductor layer |
Nov. 7, 2006 |
| 7067339 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
Jun. 27, 2006 |
| 7049212 |
Method for producing III-IV group compound semiconductor layer, method for producing semiconductor light emitting element, and vapor phase growing apparatus |
May. 23, 2006 |
| 7045808 |
III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method |
May. 16, 2006 |
| 7038300 |
Apparatus with improved layers of group III-nitride semiconductor |
May. 2, 2006 |
| 7033938 |
Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region |
Apr. 25, 2006 |
| 7015515 |
Group III nitride compound semiconductor device having a superlattice structure |
Mar. 21, 2006 |
| 7001813 |
Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths |
Feb. 21, 2006 |
| 6989287 |
Method for producing nitride semiconductor, semiconductor wafer and semiconductor device |
Jan. 24, 2006 |
| 6979584 |
Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
Dec. 27, 2005 |
| 6972206 |
Nitride semiconductor, semiconductor device, and method of manufacturing the same |
Dec. 6, 2005 |
| 6969670 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
Nov. 29, 2005 |
| 6967359 |
Nitride semiconductor substrate production method thereof and semiconductor optical device using the same |
Nov. 22, 2005 |
| 6955719 |
Manufacturing methods for semiconductor devices with multiple III-V material layers |
Oct. 18, 2005 |
| 6946308 |
Method of manufacturing III-V group compound semiconductor |
Sep. 20, 2005 |
| 6943366 |
Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method |
Sep. 13, 2005 |
| 6940103 |
Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device |
Sep. 6, 2005 |
| 6939730 |
Nitride semiconductor, semiconductor device, and method of manufacturing the same |
Sep. 6, 2005 |
| 6936103 |
Low indium content quantum well structures |
Aug. 30, 2005 |
| 6934312 |
System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom |
Aug. 23, 2005 |
| 6900070 |
Dislocation reduction in non-polar gallium nitride thin films |
May. 31, 2005 |
| 6897483 |
Second gallium nitride layers that extend into trenches in first gallium nitride layers |
May. 24, 2005 |
| 6890809 |
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device |
May. 10, 2005 |
| 6890791 |
Compound semiconductor substrates and method of fabrication |
May. 10, 2005 |
| 6887727 |
System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element |
May. 3, 2005 |
| 6887726 |
Semiconductor layer formed by selective deposition and method for depositing semiconductor layer |
May. 3, 2005 |
| 6875995 |
Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor |
Apr. 5, 2005 |
| 6864159 |
Method for fabricating III-V compound semiconductor |
Mar. 8, 2005 |
| 6861271 |
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) |
Mar. 1, 2005 |
| 6861305 |
Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
Mar. 1, 2005 |
| 6858081 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
Feb. 22, 2005 |
| 6852161 |
METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD OF FABRICATING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE |
Feb. 8, 2005 |
| 6849862 |
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer |
Feb. 1, 2005 |
| 6844574 |
III-V compound semiconductor |
Jan. 18, 2005 |
| 6828593 |
Semiconductor light emitting element and its manufacturing method |
Dec. 7, 2004 |
| 6824610 |
Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate |
Nov. 30, 2004 |
| 6821805 |
Semiconductor device, semiconductor substrate, and manufacture method |
Nov. 23, 2004 |
| 6821806 |
Method for forming compound semiconductor layer and compound semiconductor apparatus |
Nov. 23, 2004 |
| 6818463 |
Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device |
Nov. 16, 2004 |
| 6815730 |
Nitride-based semiconductor light-emitting device |
Nov. 9, 2004 |
| 6815722 |
Light-emitting device with reduced lattice mismatch |
Nov. 9, 2004 |
| 6797416 |
GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits |
Sep. 28, 2004 |
| 6787385 |
Method of preparing nitrogen containing semiconductor material |
Sep. 7, 2004 |
| 6767830 |
Br2SbCH3 a solid source ion implant and CVD precursor |
Jul. 27, 2004 |
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