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Class Information
Number: 257/E21.107
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Deposition of diamond (epo)
Description: This subclass is indented under subclass E21.101. This subclass is substantially the same in scope as ECLA classification H01L21/205A.










Patents under this class:

Patent Number Title Of Patent Date Issued
8039301 Gate after diamond transistor Oct. 18, 2011
7939367 Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate May. 10, 2011
7888171 Fabricating a gallium nitride layer with diamond layers Feb. 15, 2011
7884373 Gallium nitride layer with diamond layers Feb. 8, 2011
7736435 Method of producing single crystal Jun. 15, 2010
7368317 Method of producing an N-type diamond with high electrical conductivity May. 6, 2008
7056763 Composite structure for electronic microsystems and method for production of said composite structure Jun. 6, 2006
6875708 Method of producing diamond film and diamond film produced thereby Apr. 5, 2005
6414338 n-Type diamond and method for producing same Jul. 2, 2002
6287889 Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film Sep. 11, 2001
5872415 Microelectronic structures including semiconductor islands Feb. 16, 1999











 
 
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