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Browse by Category: Main > Physics
Class Information
Number: 257/E21.106
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) > Doping during the epitaxial deposition (epo)
Description: This subclass is indented under subclass E21.102. This subclass is substantially the same in scope as ECLA classification H01L21/205B6.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8652937 Methods of fabricating back-illuminated imaging sensors Feb. 18, 2014
8569150 Method for producing a semiconductor device with a semiconductor body Oct. 29, 2013
8501600 Methods for depositing germanium-containing layers Aug. 6, 2013
8324631 Silicon carbide semiconductor device and method for manufacturing the same Dec. 4, 2012
8043942 Method for producing core-shell nanowires, nanowires produced by the method and nanowire device comprising the nanowires Oct. 25, 2011
8039966 Structures of and methods and tools for forming in-situ metallic/dielectric caps for interconnects Oct. 18, 2011
7968920 Semiconductor device and manufacturing method thereof Jun. 28, 2011
7927905 Method of producing microsprings having nanowire tip structures Apr. 19, 2011
7897495 Formation of epitaxial layer containing silicon and carbon Mar. 1, 2011
7812394 CMOS transistor junction regions formed by a CVD etching and deposition sequence Oct. 12, 2010
7723215 Dark current reduction in back-illuminated imaging sensors and method of fabricating same May. 25, 2010
7718518 Low temperature doped silicon layer formation May. 18, 2010
7682852 Method of manufacturing semiconductor laser device including light shield plate Mar. 23, 2010
7605060 Method of epitaxial deoposition of an n-doped silicon layer Oct. 20, 2009
7485555 Methods for forming a P-type polysilicon layer in a semiconductor device Feb. 3, 2009
7479432 CMOS transistor junction regions formed by a CVD etching and deposition sequence Jan. 20, 2009
7344909 Method for producing semi-conducting devices and devices obtained with this method Mar. 18, 2008
7294522 CMOS image sensor and method for fabricating the same Nov. 13, 2007
7291524 Schottky-barrier mosfet manufacturing method using isotropic etch process Nov. 6, 2007
7067855 Semiconductor structure having an abrupt doping profile Jun. 27, 2006
7037789 Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench May. 2, 2006
7012009 Method for improving the electrical continuity for a silicon-germanium film across a silicon/oxide/polysilicon surface using a novel two-temperature process Mar. 14, 2006
6982214 Method of forming a controlled and uniform lightly phosphorous doped silicon film Jan. 3, 2006
6972442 Efficiently fabricated bipolar transistor Dec. 6, 2005
6927140 Method for fabricating a bipolar transistor base Aug. 9, 2005
6911401 Method for CVD process control for enhancing device performance Jun. 28, 2005
6830625 System for fabricating a bipolar transistor Dec. 14, 2004
6814811 Semiconductor wafer and vapor phase growth apparatus Nov. 9, 2004
6806158 Mixed crystal layer growing method and device, and semiconductor device Oct. 19, 2004
6780735 Method to increase carbon and boron doping concentrations in Si and SiGe films Aug. 24, 2004
6723621 Abrupt delta-like doping in Si and SiGe films by UHV-CVD Apr. 20, 2004
6660393 SiGeC semiconductor crystals and the method producing the same Dec. 9, 2003
6661075 Abrupt pn junction diode formed using chemical vapor deposition processing Dec. 9, 2003
6635556 Method of preventing autodoping Oct. 21, 2003
6621145 Semiconductor device having a metal-semiconductor junction with a reduced contact resistance Sep. 16, 2003
6579752 Phosphorus dopant control in low-temperature Si and SiGe epitaxy Jun. 17, 2003
6537369 SiGeC semiconductor crystal and production method thereof Mar. 25, 2003
6475627 Semiconductor wafer and vapor growth apparatus Nov. 5, 2002
6406929 Structure and method for abrupt PN junction diode formed using chemical vapor deposition processing Jun. 18, 2002
6391749 Selective epitaxial growth method in semiconductor device May. 21, 2002
6352884 Method for growing crystals having impurities and crystals prepared thereby Mar. 5, 2002
6350315 Methods of producing doped semiconductors Feb. 26, 2002
6342453 Method for CVD process control for enhancing device performance Jan. 29, 2002
6342421 Semiconductor device and manufacturing method thereof Jan. 29, 2002
6306211 Method for growing semiconductor film and method for fabricating semiconductor device Oct. 23, 2001
6294443 Method of epitaxy on a silicon substrate comprising areas heavily doped with boron Sep. 25, 2001
6204153 Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device Mar. 20, 2001
6184555 Field effect-controlled semiconductor component Feb. 6, 2001
6171389 Methods of producing doped semiconductors Jan. 9, 2001
6060119 Compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound tertiarybutylbis-(dimethylamino)phosphine May. 9, 2000

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