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Class Information
Number: 257/E21.106
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) > Doping during the epitaxial deposition (epo)
Description: This subclass is indented under subclass E21.102. This subclass is substantially the same in scope as ECLA classification H01L21/205B6.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7344909 |
Method for producing semi-conducting devices and devices obtained with this method |
Mar. 18, 2008 |
| 7294522 |
CMOS image sensor and method for fabricating the same |
Nov. 13, 2007 |
| 7291524 |
Schottky-barrier mosfet manufacturing method using isotropic etch process |
Nov. 6, 2007 |
| 7067855 |
Semiconductor structure having an abrupt doping profile |
Jun. 27, 2006 |
| 7037789 |
Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench |
May. 2, 2006 |
| 7012009 |
Method for improving the electrical continuity for a silicon-germanium film across a silicon/oxide/polysilicon surface using a novel two-temperature process |
Mar. 14, 2006 |
| 6982214 |
Method of forming a controlled and uniform lightly phosphorous doped silicon film |
Jan. 3, 2006 |
| 6972442 |
Efficiently fabricated bipolar transistor |
Dec. 6, 2005 |
| 6927140 |
Method for fabricating a bipolar transistor base |
Aug. 9, 2005 |
| 6911401 |
Method for CVD process control for enhancing device performance |
Jun. 28, 2005 |
| 6830625 |
System for fabricating a bipolar transistor |
Dec. 14, 2004 |
| 6814811 |
Semiconductor wafer and vapor phase growth apparatus |
Nov. 9, 2004 |
| 6806158 |
Mixed crystal layer growing method and device, and semiconductor device |
Oct. 19, 2004 |
| 6780735 |
Method to increase carbon and boron doping concentrations in Si and SiGe films |
Aug. 24, 2004 |
| 6723621 |
Abrupt delta-like doping in Si and SiGe films by UHV-CVD |
Apr. 20, 2004 |
| 6661075 |
Abrupt pn junction diode formed using chemical vapor deposition processing |
Dec. 9, 2003 |
| 6660393 |
SiGeC semiconductor crystals and the method producing the same |
Dec. 9, 2003 |
| 6635556 |
Method of preventing autodoping |
Oct. 21, 2003 |
| 6621145 |
Semiconductor device having a metal-semiconductor junction with a reduced contact resistance |
Sep. 16, 2003 |
| 6579752 |
Phosphorus dopant control in low-temperature Si and SiGe epitaxy |
Jun. 17, 2003 |
| 6537369 |
SiGeC semiconductor crystal and production method thereof |
Mar. 25, 2003 |
| 6475627 |
Semiconductor wafer and vapor growth apparatus |
Nov. 5, 2002 |
| 6406929 |
Structure and method for abrupt PN junction diode formed using chemical vapor deposition processing |
Jun. 18, 2002 |
| 6391749 |
Selective epitaxial growth method in semiconductor device |
May. 21, 2002 |
| 6352884 |
Method for growing crystals having impurities and crystals prepared thereby |
Mar. 5, 2002 |
| 6350315 |
Methods of producing doped semiconductors |
Feb. 26, 2002 |
| 6342421 |
Semiconductor device and manufacturing method thereof |
Jan. 29, 2002 |
| 6342453 |
Method for CVD process control for enhancing device performance |
Jan. 29, 2002 |
| 6306211 |
Method for growing semiconductor film and method for fabricating semiconductor device |
Oct. 23, 2001 |
| 6294443 |
Method of epitaxy on a silicon substrate comprising areas heavily doped with boron |
Sep. 25, 2001 |
| 6204153 |
Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device |
Mar. 20, 2001 |
| 6184555 |
Field effect-controlled semiconductor component |
Feb. 6, 2001 |
| 6171389 |
Methods of producing doped semiconductors |
Jan. 9, 2001 |
| 6060119 |
Compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound tertiarybutylbis-(dimethylamino)phosphine |
May. 9, 2000 |
| 6020253 |
Use of tertiarybutylbis-(dimethylamino)phosphine in forming semiconductor material by chemical vapor deposition |
Feb. 1, 2000 |
| 6007624 |
Process for controlling autodoping during epitaxial silicon deposition |
Dec. 28, 1999 |
| 6005285 |
Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device |
Dec. 21, 1999 |
| 6001172 |
Apparatus and method for the in-situ generation of dopants |
Dec. 14, 1999 |
| 5966627 |
In-situ doped silicon layers |
Oct. 12, 1999 |
| 5906680 |
Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
May. 25, 1999 |
| 5864161 |
Semiconductor device and manufacturing method thereof |
Jan. 26, 1999 |
| 5702529 |
Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate and apparatus for making the same |
Dec. 30, 1997 |
| 5356829 |
Silicon device including a pn-junction acting as an etch-stop in a silicon substrate |
Oct. 18, 1994 |
| 5180692 |
Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride |
Jan. 19, 1993 |
| 5116784 |
Method of forming semiconductor film |
May. 26, 1992 |
| 4774195 |
Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of ac |
Sep. 27, 1988 |
| 4504330 |
Optimum reduced pressure epitaxial growth process to prevent autodoping |
Mar. 12, 1985 |
| 4153486 |
Silicon tetrachloride epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers utilizing a preh |
May. 8, 1979 |
| 4100310 |
Method of doping inpurities |
Jul. 11, 1978 |
| 3956037 |
Method of forming semiconductor layers by vapor growth |
May. 11, 1976 |
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