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Class Information
Number: 257/E21.105
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) > Epitaxial deposition of diamond (epo)
Description: This subclass is indented under subclass E21.102. This subclass is substantially the same in scope as ECLA classification H01L21/205B4.










Patents under this class:

Patent Number Title Of Patent Date Issued
8564122 Circuit board component shim structure Oct. 22, 2013
8105955 Integrated circuit system with carbon and non-carbon silicon Jan. 31, 2012
7939367 Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate May. 10, 2011
7888171 Fabricating a gallium nitride layer with diamond layers Feb. 15, 2011
7884373 Gallium nitride layer with diamond layers Feb. 8, 2011
7736435 Method of producing single crystal Jun. 15, 2010
6875708 Method of producing diamond film and diamond film produced thereby Apr. 5, 2005
6352884 Method for growing crystals having impurities and crystals prepared thereby Mar. 5, 2002
5541423 Monocrystalline diamond semiconductor device and several electronic components employing same Jul. 30, 1996
5382809 Semiconductor device including semiconductor diamond Jan. 17, 1995
5353737 Method for forming boron-doped semiconducting diamond films Oct. 11, 1994
5306928 Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer Apr. 26, 1994
5252840 Semiconductor device having differently doped diamond layers Oct. 12, 1993
5223721 Diamond n-type semiconductor diamond p-n junction diode Jun. 29, 1993
5144380 Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate Sep. 1, 1992
5112775 Method of making diamond N-type semiconductor diamond p-n junction diode using diphosphorus pentoxide and hot filament CVD method May. 12, 1992
5051785 N-type semiconducting diamond, and method of making the same Sep. 24, 1991











 
 
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