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Class Information
Number: 257/E21.103
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) > Deposition on a semiconductor substrate which is different from the semiconductor material being deposited, i.e., formation of heterojunctions (epo)
Description: This subclass is indented under subclass E21.102. This subclass is substantially the same in scope as ECLA classification H01L21/205B2.

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8361867 Biaxial strained field effect transistor devices Jan. 29, 2013
8247261 Thin substrate fabrication using stress-induced substrate spalling Aug. 21, 2012
8076223 Method for producing semiconductor substrate Dec. 13, 2011
8062963 Method of fabricating a semiconductor device having an epitaxy region Nov. 22, 2011
8026535 Thin film transistor and organic electroluminescence display using the same Sep. 27, 2011
7989295 Method of manufacturing semiconductor device Aug. 2, 2011
7977221 Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same Jul. 12, 2011
7935617 Method to stabilize carbon in Si.sub.1-x-yGe.sub.xC.sub.y layers May. 3, 2011
7902025 Method of manufacturing semiconductor device Mar. 8, 2011
7897495 Formation of epitaxial layer containing silicon and carbon Mar. 1, 2011
7863163 Epitaxial deposition of doped semiconductor materials Jan. 4, 2011
7851379 Substrate processing method and substrate processing apparatus Dec. 14, 2010
7812396 Semiconductor device with channel layer comprising different types of impurities Oct. 12, 2010
7800116 Group III-nitride semiconductor device with a cap layer Sep. 21, 2010
7785995 Semiconductor buffer structures Aug. 31, 2010
7786488 Nitride semiconductor wafer and method of processing nitride semiconductor wafer Aug. 31, 2010
7772127 Semiconductor heterostructure and method for forming same Aug. 10, 2010
7767560 Three dimensional strained quantum wells and three dimensional strained surface channels by Ge confinement method Aug. 3, 2010
7723214 Multilayer structure comprising a substrate and a layer of silicon and germanium deposited heteroepitaxially thereon, and a process for producing it May. 25, 2010
7718469 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys May. 18, 2010
7678645 Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices Mar. 16, 2010
7671383 Semiconductor device and method of producing the same Mar. 2, 2010
7575973 Method of making three dimensional NAND memory Aug. 18, 2009
7498630 Nonvolatile semiconductor memory Mar. 3, 2009
7439567 Contactless nonvolatile memory array Oct. 21, 2008
7429766 Split gate type nonvolatile memory device Sep. 30, 2008
7399686 Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate Jul. 15, 2008
7365383 Method of forming an EPROM cell and structure therefor Apr. 29, 2008
7341929 Method to fabricate patterned strain-relaxed SiGe epitaxial with threading dislocation density control Mar. 11, 2008
7339226 Dual-level stacked flash memory cell with a MOSFET storage transistor Mar. 4, 2008
7332399 Method for manufacturing a semiconductor substrate and method for manufacturing a semiconductor in which film thicknesses can be accurately controlled Feb. 19, 2008
7312136 Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance Dec. 25, 2007
7294883 Nonvolatile memory cells with buried channel transistors Nov. 13, 2007
7262117 Germanium integrated CMOS wafer and method for manufacturing the same Aug. 28, 2007
7229901 Fabrication of strained heterojunction structures Jun. 12, 2007
7060597 Manufacturing method for a silicon substrate having strained layer Jun. 13, 2006
7056789 Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor Jun. 6, 2006
7041170 Method of producing high quality relaxed silicon germanium layers May. 9, 2006
6982208 Method for producing high throughput strained-Si channel MOSFETS Jan. 3, 2006
6946373 Relaxed, low-defect SGOI for strained Si CMOS applications Sep. 20, 2005
6878610 Relaxed silicon germanium substrate with low defect density Apr. 12, 2005
6723622 Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer Apr. 20, 2004
6228166 Method for boron contamination reduction in IC fabrication May. 8, 2001
6117750 Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively Sep. 12, 2000
5670414 Graded-gap process for growing a SiC/Si heterojunction structure Sep. 23, 1997
5523160 Highly-oriented diamond film Jun. 4, 1996
5256550 Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x layer Oct. 26, 1993
5091333 Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth Feb. 25, 1992
5084411 Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film Jan. 28, 1992
4885614 Semiconductor device with crystalline silicon-germanium-carbon alloy Dec. 5, 1989

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