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Class Information
Number: 257/E21.102
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iv elements, e.g., si, ge, c (epo)
Description: This subclass is indented under subclass E21.101. This subclass is substantially the same in scope as ECLA classification H01L21/205B.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.103 Deposition on a semiconductor substrate which is different from the semiconductor material being deposited, i.e., formation of heterojunctions (epo) 53
257/E21.104 Deposition on an insulating or a metallic substrate (epo) 63
257/E21.106 Doping during the epitaxial deposition (epo) 66
257/E21.105 Epitaxial deposition of diamond (epo) 17


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8652937 Methods of fabricating back-illuminated imaging sensors Feb. 18, 2014
8530340 Epitaxial semiconductor deposition methods and structures Sep. 10, 2013
8524582 Silicon-germanium hydrides and methods for making and using same Sep. 3, 2013
8518360 Silicon-germanium hydrides and methods for making and using same Aug. 27, 2013
8501600 Methods for depositing germanium-containing layers Aug. 6, 2013
8497217 Film forming apparatus and film-forming method Jul. 30, 2013
8492245 Methods for making thin layers of crystalline materials Jul. 23, 2013
8373233 Highly N-type and P-type co-doping silicon for strain silicon application Feb. 12, 2013
8372671 Solid state devices with semi-polar facets and associated methods of manufacturing Feb. 12, 2013
8354282 Very high transmittance, back-illuminated, silicon-on-sapphire semiconductor wafer substrate for high quantum efficiency and high resolution, solid-state, imaging focal plane arrays Jan. 15, 2013
8349693 Method of manufacturing a semiconductor device having a super junction Jan. 8, 2013
8329532 Process for the simultaneous deposition of crystalline and amorphous layers with doping Dec. 11, 2012
8309986 Tri-gate field-effect transistors formed by aspect ratio trapping Nov. 13, 2012
8273664 Method for etching and filling deep trenches Sep. 25, 2012
8268665 Antimony and germanium complexes useful for CVD/ALD of metal thin films Sep. 18, 2012
8216537 Silicon-germanium hydrides and methods for making and using same Jul. 10, 2012
8173497 Semiconductor device preventing floating body effect in a peripheral region thereof and method for manufacturing the same May. 8, 2012
8133802 Silicon-germanium hydrides and methods for making and using same Mar. 13, 2012
8119494 Defect-free hetero-epitaxy of lattice mismatched semiconductors Feb. 21, 2012
8105955 Integrated circuit system with carbon and non-carbon silicon Jan. 31, 2012
8102052 Process for the simultaneous deposition of crystalline and amorphous layers with doping Jan. 24, 2012
8097527 Method of forming epitaxial layer Jan. 17, 2012
8093143 Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side Jan. 10, 2012
8080836 Embedded semiconductor component Dec. 20, 2011
8076222 Microcrystalline silicon thin film transistor Dec. 13, 2011
8076223 Method for producing semiconductor substrate Dec. 13, 2011
8071442 Transistor with embedded Si/Ge material having reduced offset to the channel region Dec. 6, 2011
8043901 Method for manufacturing display device Oct. 25, 2011
8026535 Thin film transistor and organic electroluminescence display using the same Sep. 27, 2011
8017504 Transistor having a high-k metal gate stack and a compressively stressed channel Sep. 13, 2011
8012860 Atomic layer deposition for functionalizing colloidal and semiconductor particles Sep. 6, 2011
7999250 Silicon-germanium-carbon semiconductor structure Aug. 16, 2011
7982214 Voltage-operated layered arrangement Jul. 19, 2011
7977706 Tri-gate field-effect transistors formed by aspect ratio trapping Jul. 12, 2011
7972971 Method for producing Si.sub.1-yGe.sub.y based zones with different contents in Ge on a same substrate by condensation of germanium Jul. 5, 2011
7947552 Process for the simultaneous deposition of crystalline and amorphous layers with doping May. 24, 2011
7935614 Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers May. 3, 2011
7935617 Method to stabilize carbon in Si.sub.1-x-yGe.sub.xC.sub.y layers May. 3, 2011
7927977 Method of making damascene diodes using sacrificial material Apr. 19, 2011
7897489 Selective activation of hydrogen passivated silicon and germanium surfaces Mar. 1, 2011
7863152 Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure Jan. 4, 2011
7863163 Epitaxial deposition of doped semiconductor materials Jan. 4, 2011
7833885 Microcrystalline silicon thin film transistor Nov. 16, 2010
7799651 Method of treating interface defects in a substrate Sep. 21, 2010
7799592 Tri-gate field-effect transistors formed by aspect ratio trapping Sep. 21, 2010
7785995 Semiconductor buffer structures Aug. 31, 2010
7776710 Manufacturing method of semiconductor wafer having a trench structure and epitaxial layer Aug. 17, 2010
7759213 Pattern independent Si:C selective epitaxy Jul. 20, 2010
7755093 Semiconductor storage device and method of manufacturing the same Jul. 13, 2010
7723214 Multilayer structure comprising a substrate and a layer of silicon and germanium deposited heteroepitaxially thereon, and a process for producing it May. 25, 2010

1 2 3 4 5










 
 
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