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Class Information
Number: 257/E21.102
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iv elements, e.g., si, ge, c (epo)
Description: This subclass is indented under subclass E21.101. This subclass is substantially the same in scope as ECLA classification H01L21/205B.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7442657 |
Producing stress-relaxed crystalline layer on a substrate |
Oct. 28, 2008 |
| 7427545 |
Trench memory cells with buried isolation collars, and methods of fabricating same |
Sep. 23, 2008 |
| 7393735 |
Structure for and method of fabricating a high-mobility field-effect transistor |
Jul. 1, 2008 |
| 7375040 |
Etch stop layer |
May. 20, 2008 |
| 7371665 |
Method for fabricating shallow trench isolation layer of semiconductor device |
May. 13, 2008 |
| 7364980 |
Manufacturing method of semiconductor substrate |
Apr. 29, 2008 |
| 7358166 |
Relaxed, low-defect SGOI for strained Si CMOS applications |
Apr. 15, 2008 |
| 7314790 |
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain |
Jan. 1, 2008 |
| 7288430 |
Method of fabricating heteroepitaxial microstructures |
Oct. 30, 2007 |
| 7273818 |
Film formation method and apparatus for semiconductor process |
Sep. 25, 2007 |
| 7244667 |
Method and device for the production of thin epitaxial semiconductor layers |
Jul. 17, 2007 |
| 7202145 |
Strained Si formed by anneal |
Apr. 10, 2007 |
| 7049627 |
Semiconductor heterostructures and related methods |
May. 23, 2006 |
| 7018554 |
Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
Mar. 28, 2006 |
| 7008864 |
Method of depositing high-quality SiGe on SiGe substrates |
Mar. 7, 2006 |
| 6995396 |
Semiconductor substrate, semiconductor device and method for fabricating the same |
Feb. 7, 2006 |
| 6991959 |
Method of manufacturing silicon carbide film |
Jan. 31, 2006 |
| 6987072 |
Method of producing semiconductor crystal |
Jan. 17, 2006 |
| 6987055 |
Methods for deposition of semiconductor material |
Jan. 17, 2006 |
| 6982208 |
Method for producing high throughput strained-Si channel MOSFETS |
Jan. 3, 2006 |
| 6979611 |
Method for fabricating semiconductor device |
Dec. 27, 2005 |
| 6958286 |
Method of preventing surface roughening during hydrogen prebake of SiGe substrates |
Oct. 25, 2005 |
| 6958253 |
Process for deposition of semiconductor films |
Oct. 25, 2005 |
| 6949474 |
Method of manufacturing a semiconductor device and a semiconductor manufacture system |
Sep. 27, 2005 |
| 6927144 |
Method for manufacturing buried insulating layer type single crystal silicon carbide substrate |
Aug. 9, 2005 |
| 6919253 |
Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer |
Jul. 19, 2005 |
| 6911367 |
Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions |
Jun. 28, 2005 |
| 6911401 |
Method for CVD process control for enhancing device performance |
Jun. 28, 2005 |
| 6905972 |
Semiconductor device and method for manufacturing the same |
Jun. 14, 2005 |
| 6902991 |
Semiconductor device having a thick strained silicon layer and method of its formation |
Jun. 7, 2005 |
| 6900115 |
Deposition over mixed substrates |
May. 31, 2005 |
| 6897129 |
Fabrication method of semiconductor device and semiconductor device |
May. 24, 2005 |
| 6884464 |
Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber |
Apr. 26, 2005 |
| 6863735 |
Epitaxial growth furnace |
Mar. 8, 2005 |
| 6852602 |
Semiconductor crystal film and method for preparation thereof |
Feb. 8, 2005 |
| 6846728 |
Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film |
Jan. 25, 2005 |
| 6838395 |
Method for fabricating a semiconductor crystal |
Jan. 4, 2005 |
| 6828182 |
Epitaxial thin film forming method |
Dec. 7, 2004 |
| 6821825 |
Process for deposition of semiconductor films |
Nov. 23, 2004 |
| 6818533 |
Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects |
Nov. 16, 2004 |
| 6814811 |
Semiconductor wafer and vapor phase growth apparatus |
Nov. 9, 2004 |
| 6808564 |
In-situ post epitaxial treatment process |
Oct. 26, 2004 |
| 6806171 |
Method of producing a thin layer of crystalline material |
Oct. 19, 2004 |
| 6774040 |
Apparatus and method for surface finishing a silicon film |
Aug. 10, 2004 |
| 6762106 |
Semiconductor device and method for fabricating the same |
Jul. 13, 2004 |
| 6749687 |
In situ growth of oxide and silicon layers |
Jun. 15, 2004 |
| 6746941 |
Semiconductor wafer and production method therefor |
Jun. 8, 2004 |
| 6743738 |
Dopant precursors and processes |
Jun. 1, 2004 |
| 6720587 |
Structure evaluation method, method for manufacturing semiconductor devices, and recording medium |
Apr. 13, 2004 |
| 6716751 |
Dopant precursors and processes |
Apr. 6, 2004 |
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