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Class Information
Number: 257/E21.101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/205.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.107 Deposition of diamond (epo) 11
257/E21.108 Epitaxial deposition of group iii-v compound (epo) 322
257/E21.102 Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) 233


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
4701343 Method of depositing thin films using microwave energy Oct. 20, 1987
4701572 Amorphous solar cell Oct. 20, 1987
4698104 Controlled isotropic doping of semiconductor materials Oct. 6, 1987
4698234 Vapor deposition of semiconductor material Oct. 6, 1987
4696702 Method of depositing wide bandgap amorphous semiconductor materials Sep. 29, 1987
4696758 Gas mixtures for the vapor deposition of semiconductor material Sep. 29, 1987
4695331 Hetero-augmentation of semiconductor materials Sep. 22, 1987
4692558 Counteraction of semiconductor impurity effects Sep. 8, 1987
4690830 Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and oth Sep. 1, 1987
4689645 Current control device Aug. 25, 1987
4683147 Method of forming deposition film Jul. 28, 1987
4683146 Process for producing deposition films Jul. 28, 1987
4683144 Method for forming a deposited film Jul. 28, 1987
4683145 Method for forming deposited film Jul. 28, 1987
4681640 Laser-induced chemical vapor deposition of germanium and doped-germanium films Jul. 21, 1987
4670293 Method of making semiconductor film Jun. 2, 1987
4670762 Amorphous silicon semiconductor and process for same Jun. 2, 1987
4664937 Method of depositing semiconductor films by free radical generation May. 12, 1987
4665428 Semiconductor device May. 12, 1987
4657777 Formation of deposited film Apr. 14, 1987
4649059 Photoionization technique for growth of metallic films Mar. 10, 1987
4642144 Proximity doping of amorphous semiconductors Feb. 10, 1987
4642243 Method and apparatus for forming non-single-crystal layer Feb. 10, 1987
4641603 Epitaxial growing apparatus Feb. 10, 1987
4640845 Method and apparatus for forming non-single-crystal layer Feb. 3, 1987
4637895 Gas mixtures for the vapor deposition of semiconductor material Jan. 20, 1987
4633809 Amorphous silicon film forming apparatus Jan. 6, 1987
4634601 Method for production of semiconductor by glow discharge decomposition of silane Jan. 6, 1987
4631198 Method of manufacturing thin amorphous silicon film Dec. 23, 1986
4626449 Method for forming deposition film Dec. 2, 1986
4624735 Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members Nov. 25, 1986
4624862 Boron doped semiconductor materials and method for producing same Nov. 25, 1986
4615905 Method of depositing semiconductor films by free radical generation Oct. 7, 1986
4615298 Method of making non-crystalline semiconductor layer Oct. 7, 1986
4613382 Method of forming passivated polycrystalline semiconductors Sep. 23, 1986
4612207 Apparatus and process for the fabrication of large area thin film multilayers Sep. 16, 1986
4609771 Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material Sep. 2, 1986
4608095 Gettering Aug. 26, 1986
4608096 Gettering Aug. 26, 1986
4605941 Amorphous semiconductors equivalent to crystalline semiconductors Aug. 12, 1986
4600801 Fluorinated, p-doped microcrystalline silicon semiconductor alloy material Jul. 15, 1986
4598304 Thin film devices of silicon Jul. 1, 1986
4597160 Method of fabricating a polysilicon transistor with a high carrier mobility Jul. 1, 1986
4594261 Method for producing thin film semiconductor device Jun. 10, 1986
4591464 Method and apparatus for evaporating a liquid organic metal May. 27, 1986
4591893 Photoelectric conversion device utilizing fibrous silicon May. 27, 1986
4585671 Formation process of amorphous silicon film Apr. 29, 1986
4582720 Method and apparatus for forming non-single-crystal layer Apr. 15, 1986
4582721 Process for preparing amorphous silicon semiconductor Apr. 15, 1986
4581620 Semiconductor device of non-single crystal structure Apr. 8, 1986

1 2 3 4 5 6 7 8 9 10 11










 
 
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