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Class Information
Number: 257/E21.101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/205.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.107 Deposition of diamond (epo) 11
257/E21.108 Epitaxial deposition of group iii-v compound (epo) 322
257/E21.102 Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) 233


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
4853251 Process for forming deposited film including carbon as a constituent element Aug. 1, 1989
4842892 Method for depositing an n+ amorphous silicon layer onto contaminated substrate Jun. 27, 1989
4842897 Method for forming deposited film Jun. 27, 1989
4843022 Method of making fibrous silicon semiconductor by plasma CVD Jun. 27, 1989
4839312 Fluorinated precursors from which to fabricate amorphous semiconductor material Jun. 13, 1989
4839701 Hydrogenated amorphous silicon film Jun. 13, 1989
4837048 Method for forming a deposited film Jun. 6, 1989
4835005 Process for forming deposition film May. 30, 1989
4832981 Method and apparatus for forming non-single crystal layer May. 23, 1989
4830890 Method for forming a deposited film from a gaseous silane compound heated on a substrate and introducing an active species therewith May. 16, 1989
4826711 Semiconductor manufacturing method and device May. 2, 1989
4822636 Method for forming deposited film Apr. 18, 1989
4818560 Method for preparation of multi-layer structure film Apr. 4, 1989
4818564 Method for forming deposited film Apr. 4, 1989
4812331 Method for forming deposited film containing group III or V element by generating precursors with halogenic oxidizing agent Mar. 14, 1989
4812328 Method for forming deposited film Mar. 14, 1989
4808553 Semiconductor device manufacturing method Feb. 28, 1989
4808554 Semiconductor device manufacturing method Feb. 28, 1989
4803093 Process for preparing a functional deposited film Feb. 7, 1989
4801468 Process for forming deposited film Jan. 31, 1989
4801474 Method for forming thin film multi-layer structure member Jan. 31, 1989
4800173 Process for preparing Si or Ge epitaxial film using fluorine oxidant Jan. 24, 1989
4799968 Photovoltaic device Jan. 24, 1989
4799087 Field effect transistor Jan. 17, 1989
4784874 Process for forming deposited film Nov. 15, 1988
4784963 Method for light-induced photolytic deposition simultaneously independently controlling at least two different frequency radiations during the process Nov. 15, 1988
4778692 Process for forming deposited film Oct. 18, 1988
4772565 Method of manufacturing solid-state image sensor Sep. 20, 1988
4772570 Method for producing an electronic device having a multi-layer structure Sep. 20, 1988
4771015 Method for producing an electronic device having a multi-layer structure Sep. 13, 1988
4769682 Boron doped semiconductor materials and method for producing same Sep. 6, 1988
4766091 Method for producing an electronic device having a multi-layer structure Aug. 23, 1988
4762808 Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes Aug. 9, 1988
4761302 Fluorination of amorphous thin-film materials with xenon fluoride Aug. 2, 1988
4756924 Method for the microwave fabrication of boron doped semiconductor materials Jul. 12, 1988
4745000 Method of fabricating electrostatic drums using microwave energy May. 17, 1988
4741919 Process for preparation of semiconductor device May. 3, 1988
4741964 Structure containing hydrogenated amorphous silicon and process May. 3, 1988
4737379 Plasma deposited coatings, and low temperature plasma method of making same Apr. 12, 1988
4735822 Method for producing an electronic device having a multi-layer structure Apr. 5, 1988
4728528 Process for forming deposited film Mar. 1, 1988
4727044 Method of making a thin film transistor with laser recrystallized source and drain Feb. 23, 1988
4726963 Process for forming deposited film Feb. 23, 1988
4719122 CVD method and apparatus for forming a film Jan. 12, 1988
4719123 Method for fabricating periodically multilayered film Jan. 12, 1988
4717585 Process for forming deposited film Jan. 5, 1988
4717586 Process for forming deposited film Jan. 5, 1988
4716048 Process for forming deposited film Dec. 29, 1987
4710786 Wide band gap semiconductor alloy material Dec. 1, 1987
4703336 Photodetection and current control devices Oct. 27, 1987

1 2 3 4 5 6 7 8 9 10 11










 
 
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