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Class Information
Number: 257/E21.101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/205.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.107 Deposition of diamond (epo) 11
257/E21.108 Epitaxial deposition of group iii-v compound (epo) 322
257/E21.102 Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) 233


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
5135607 Process for forming deposited film Aug. 4, 1992
5135886 Integrated circuit fabrication utilizing amorphous layers Aug. 4, 1992
5132754 Thin film silicon semiconductor device and process for producing thereof Jul. 21, 1992
5108936 Method of producing a bipolar transistor having an amorphous emitter formed by plasma CVD Apr. 28, 1992
5102813 Method of fabricating a thin film transistor Apr. 7, 1992
5096856 In-situ doped silicon using tertiary butyl phosphine Mar. 17, 1992
5094697 Photovoltaic device and method for producing the same Mar. 10, 1992
5094964 Method for manufacturing a bipolar semiconductor device Mar. 10, 1992
5093703 Thin film transistor with 10-15% hydrogen content Mar. 3, 1992
5082696 Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes Jan. 21, 1992
5070027 Method of forming a heterostructure diode Dec. 3, 1991
5064779 Method of manufacturing polycrystalline silicon film Nov. 12, 1991
5043772 Semiconductor photo-electrically-sensitive device Aug. 27, 1991
5037774 Process for the production of semiconductor devices utilizing multi-step deposition and recrystallization of amorphous silicon Aug. 6, 1991
5036794 CVD apparatus Aug. 6, 1991
5024706 Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film Jun. 18, 1991
5017308 Silicon thin film and method of producing the same May. 21, 1991
5013690 Method for deposition of silicon films from azidosilane sources May. 7, 1991
5011759 Semiconductor element and method of forming same and article in which said element is used Apr. 30, 1991
5007971 Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film Apr. 16, 1991
5006180 Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film Apr. 9, 1991
5002618 Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film Mar. 26, 1991
4992839 Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same Feb. 12, 1991
4988642 Semiconductor device, manufacturing method, and system Jan. 29, 1991
4982693 Semiconductor vapor phase growing apparatus Jan. 8, 1991
4981811 Process for fabricating low defect polysilicon Jan. 1, 1991
4982251 Semiconductor element Jan. 1, 1991
4971832 HR-CVD process for the formation of a functional deposited film on a substrate with application of a voltage in the range of -5 to -100 V Nov. 20, 1990
4968384 Method of producing carbon-doped amorphous silicon thin film Nov. 6, 1990
4959700 Insulated gate field effect transistor and its manufacturing method Sep. 25, 1990
4942057 Making an amorphous layer Jul. 17, 1990
4942058 Process for forming deposited film Jul. 17, 1990
4937095 Method for forming a film Jun. 26, 1990
4933300 Process for forming multilayer thin film Jun. 12, 1990
4921722 Method for forming deposited film May. 1, 1990
4918028 Process for photo-assisted epitaxial growth using remote plasma with in-situ etching Apr. 17, 1990
4909183 Apparatus for plasma CVD Mar. 20, 1990
4901669 Method and apparatus for forming thin film Feb. 20, 1990
4900238 Scroll type compressor with releasably secured hermetic housing Feb. 13, 1990
4900694 Process for the preparation of a multi-layer stacked junction typed thin film transistor using seperate remote plasma Feb. 13, 1990
4897281 Process for the formation of a functional deposited film by way of microwave plasma CVD method Jan. 30, 1990
4891332 Method of manufacturing a semiconductor device comprising a circuit element formed of carbon doped polycrystalline silicon Jan. 2, 1990
4885258 Method for making a thin film transistor using a concentric inlet feeding system Dec. 5, 1989
4882299 Deposition of polysilicon using a remote plasma and in situ generation of UV light. Nov. 21, 1989
4877650 Method for forming deposited film Oct. 31, 1989
4877753 In situ doped polysilicon using tertiary butyl phosphine Oct. 31, 1989
4873125 Method for forming deposited film Oct. 10, 1989
4869976 Process for preparing semiconductor layer Sep. 26, 1989
4868014 Method for forming thin film multi-layer structure member Sep. 19, 1989
4866006 Process for producing hydrogenated amorphous silicon film Sep. 12, 1989

1 2 3 4 5 6 7 8 9 10 11










 
 
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