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Class Information
Number: 257/E21.101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/205.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.107 Deposition of diamond (epo) 11
257/E21.108 Epitaxial deposition of group iii-v compound (epo) 322
257/E21.102 Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) 233

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
5429498 Heat treatment method and apparatus thereof Jul. 4, 1995
5413954 Method of making a silicon-based device comprising surface plasma cleaning May. 9, 1995
5409867 Method of producing polycrystalline semiconductor thin film Apr. 25, 1995
5405492 Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment Apr. 11, 1995
5397737 Deposition of device quality low H content, amorphous silicon films Mar. 14, 1995
5391893 Nonsingle crystal semiconductor and a semiconductor device using such semiconductor Feb. 21, 1995
5391410 Plasma CVD of amorphous silicon thin film Feb. 21, 1995
5389580 Thin film semiconductor device and method of production Feb. 14, 1995
5389570 Method of forming boron doped silicon layer and semiconductor Feb. 14, 1995
5387542 Polycrystalline silicon thin film and low temperature fabrication method thereof Feb. 7, 1995
5385763 Method for forming a film on a substrate by activating a reactive gas Jan. 31, 1995
5378541 Silicon thin film member Jan. 3, 1995
5374481 Polyemitter structure with improved interface control Dec. 20, 1994
5371039 Method for fabricating capacitor having polycrystalline silicon film Dec. 6, 1994
5371380 Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.s Dec. 6, 1994
5369290 Light emission element using a polycrystalline semiconductor material of III-V group compound Nov. 29, 1994
5352636 In situ method for cleaning silicon surface and forming layer thereon in same chamber Oct. 4, 1994
5332689 Method for depositing low bulk resistivity doped films Jul. 26, 1994
RE34658 Semiconductor device of non-single crystal-structure Jul. 12, 1994
5320880 Method of providing a silicon film having a roughened outer surface Jun. 14, 1994
5313077 Insulated gate field effect transistor and its manufacturing method May. 17, 1994
5288658 Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma Feb. 22, 1994
5278015 Amorphous silicon film, its production and photo semiconductor device utilizing such a film Jan. 11, 1994
5273609 Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment Dec. 28, 1993
5266816 Polysilicon thin film semiconductor device containing nitrogen Nov. 30, 1993
5264710 Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals Nov. 23, 1993
5262350 Forming a non single crystal semiconductor layer by using an electric current Nov. 16, 1993
5258207 Amorphous silicon film, its production and photo semiconductor device utilizing such a film Nov. 2, 1993
5256576 Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer Oct. 26, 1993
5250463 Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate Oct. 5, 1993
5250818 Low temperature germanium-silicon on insulator thin-film transistor Oct. 5, 1993
5248630 Thin film silicon semiconductor device and process for producing thereof Sep. 28, 1993
5246886 Process for depositing a silicon-containing polycrystalline film on a substrate by way of growing Ge-crystalline nucleus Sep. 21, 1993
5242530 Pulsed gas plasma-enhanced chemical vapor deposition of silicon Sep. 7, 1993
5234843 Method of making a semiconductor film where the hydrogen and/or fluorine is released prior to ion beam crystallization Aug. 10, 1993
5232868 Method for forming a thin semiconductor film Aug. 3, 1993
5227329 Method of manufacturing semiconductor device Jul. 13, 1993
5225378 Method of forming a phosphorus doped silicon film Jul. 6, 1993
5221643 Method for producing polycrystalline semiconductor material by plasma-induced vapor phase deposition using activated hydrogen Jun. 22, 1993
5214002 Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step May. 25, 1993
5198387 Method and apparatus for in-situ doping of deposited silicon Mar. 30, 1993
5194398 Semiconductor film and process for its production Mar. 16, 1993
5192717 Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method Mar. 9, 1993
5180690 Method of forming a layer of doped crystalline semiconductor alloy material Jan. 19, 1993
5178905 Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state Jan. 12, 1993
5177578 Polycrystalline silicon thin film and transistor using the same Jan. 5, 1993
5160543 Device for forming a deposited film Nov. 3, 1992
5156881 Method for forming a film on a substrate by activating a reactive gas Oct. 20, 1992
5152833 Amorphous silicon film, its production and photo semiconductor device utilizing such a film Oct. 6, 1992
5142344 Insulated gate field effect transistor and its manufacturing method Aug. 25, 1992

1 2 3 4 5 6 7 8 9 10 11

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