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Class Information
Number: 257/E21.101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/205.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.107 Deposition of diamond (epo) 11
257/E21.108 Epitaxial deposition of group iii-v compound (epo) 322
257/E21.102 Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) 233

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
6204155 Semiconductor device and production thereof Mar. 20, 2001
6197669 Reduction of surface defects on amorphous silicon grown by a low-temperature, high pressure LPCVD process Mar. 6, 2001
6191011 Selective hemispherical grain silicon deposition Feb. 20, 2001
6187100 Semiconductor device and production thereof Feb. 13, 2001
6180438 Thin film transistors and electronic devices comprising such Jan. 30, 2001
6169004 Production method for a semiconductor device Jan. 2, 2001
6166395 Amorphous silicon interconnect with multiple silicon layers Dec. 26, 2000
6159300 Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device Dec. 12, 2000
6159828 Semiconductor processing method of providing a doped polysilicon layer Dec. 12, 2000
6159763 Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element Dec. 12, 2000
6150242 Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode Nov. 21, 2000
6149728 Semiconductor manufacturing device Nov. 21, 2000
6143619 Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus Nov. 7, 2000
6140246 In-situ P doped amorphous silicon by NH3 to form oxidation resistant and finer grain floating gates Oct. 31, 2000
6132519 Vapor deposition apparatus and vapor deposition method Oct. 17, 2000
6132514 Catalytic breakdown of reactant gases in chemical vapor deposition Oct. 17, 2000
6129950 Method of forming a thick polysilicon layer Oct. 10, 2000
6124186 Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique Sep. 26, 2000
6113701 Semiconductor device, manufacturing method, and system Sep. 5, 2000
6110844 Reduction of particle deposition on substrates using temperature gradient control Aug. 29, 2000
6096626 Semiconductor structures and semiconductor processing methods of forming silicon layers Aug. 1, 2000
6080611 Semiconductor device and production thereof Jun. 27, 2000
6057005 Method of forming semiconductor thin film May. 2, 2000
6043105 Method for manufacturing semiconductor sensitive devices Mar. 28, 2000
6040010 Catalytic breakdown of reactant gases in chemical vapor deposition Mar. 21, 2000
6037017 Method for formation of multilayer film Mar. 14, 2000
6017779 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device Jan. 25, 2000
5970325 Thin-film switching device having chlorine-containing active region and methods of fabrication therefor Oct. 19, 1999
5970365 Silicon wafer including amorphous silicon layer formed by PCVD and method of manufacturing wafer Oct. 19, 1999
5965904 Semiconductor device comprising silicon semiconductor layer Oct. 12, 1999
5956602 Deposition of polycrystal Si film Sep. 21, 1999
5943560 Method to fabricate the thin film transistor Aug. 24, 1999
5930657 Method of depositing an amorphous silicon film by APCVD Jul. 27, 1999
5913127 Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMS Jun. 15, 1999
5910342 Process for forming deposition film Jun. 8, 1999
5888853 Integrated circuit including a graded grain structure for enhanced transistor formation and fabrication method thereof Mar. 30, 1999
5888295 Method of forming a silicon film Mar. 30, 1999
5885884 Process for fabricating a microcrystalline silicon structure Mar. 23, 1999
5879970 Process of growing polycrystalline silicon-germanium alloy having large silicon content Mar. 9, 1999
5877094 Method for fabricating a silicon-on-sapphire wafer Mar. 2, 1999
5874131 CVD method for forming metal-containing films Feb. 23, 1999
5869389 Semiconductor processing method of providing a doped polysilicon layer Feb. 9, 1999
5859443 Semiconductor device Jan. 12, 1999
5858819 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device Jan. 12, 1999
5851904 Method of manufacturing microcrystalline layers and their utilization Dec. 22, 1998
5846869 Method of manufacturing semiconductor integrated circuit device Dec. 8, 1998
5837580 Method to form hemi-spherical grain (HSG) silicon Nov. 17, 1998
5821158 Substrate surface treatment method capable of removing a spontaneous oxide film at a relatively low temperature Oct. 13, 1998
5817559 Production method for a semiconductor device Oct. 6, 1998
5804480 method for forming a DRAM capacitor using HSG-Si technique and oxygen implant Sep. 8, 1998

1 2 3 4 5 6 7 8 9 10 11

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