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Class Information
Number: 257/E21.101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/205.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.107 Deposition of diamond (epo) 11
257/E21.108 Epitaxial deposition of group iii-v compound (epo) 322
257/E21.102 Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) 233


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
7011866 Method and apparatus for film deposition Mar. 14, 2006
7001831 Method for depositing a film on a substrate using Cat-PACVD Feb. 21, 2006
6998675 Nucleation for improved flash erase characteristics Feb. 14, 2006
6974766 In situ deposition of a low .kappa. dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application Dec. 13, 2005
6972433 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device Dec. 6, 2005
6967384 Structure and method for ultra-small grain size polysilicon Nov. 22, 2005
6958253 Process for deposition of semiconductor films Oct. 25, 2005
6951826 Silicon carbide deposition for use as a low dielectric constant anti-reflective coating Oct. 4, 2005
6926876 Plasma production of polycrystalline silicon Aug. 9, 2005
6924212 Method for forming a semiconductor Aug. 2, 2005
6913986 Method and apparatus for fabricating a thin film and thin film transistor and method of fabricating same Jul. 5, 2005
6911369 Discontinuity prevention for SiGe deposition Jun. 28, 2005
6900115 Deposition over mixed substrates May. 31, 2005
6900463 Semiconductor device May. 31, 2005
6897559 Silicon-based thin film forming apparatus, silicon-based thin film forming method and semiconductor element May. 24, 2005
6884705 Semiconductor device having hetero grain stack gate and method of forming the same Apr. 26, 2005
6875674 Method of manufacturing a semiconductor device with fluorine concentration Apr. 5, 2005
6872972 Method for forming silicon film with changing grain size by thermal process Mar. 29, 2005
6864161 Method of forming a gate structure using a dual step polysilicon deposition procedure Mar. 8, 2005
6821825 Process for deposition of semiconductor films Nov. 23, 2004
6814811 Semiconductor wafer and vapor phase growth apparatus Nov. 9, 2004
6808986 Method of forming nanocrystals in a memory device Oct. 26, 2004
6808965 Methodology for fabricating a thin film transistor, including an LDD region, from amorphous semiconductor film deposited at 530.degree. C. or less using low pressure chemical vapor deposition Oct. 26, 2004
6803080 Method of forming crystalline silicon film by CVD Oct. 12, 2004
6786997 Plasma processing apparatus Sep. 7, 2004
6784103 Method of formation of nanocrystals on a semiconductor structure Aug. 31, 2004
6780464 Thermal gradient enhanced CVD deposition at low pressure Aug. 24, 2004
6764883 Amorphous and polycrystalline silicon nanolaminate Jul. 20, 2004
6762451 Nucleation for improved flash erase characteristics Jul. 13, 2004
6750474 Semiconducting devices and method of making thereof Jun. 15, 2004
6743700 Semiconductor film, semiconductor device and method of their production Jun. 1, 2004
6743738 Dopant precursors and processes Jun. 1, 2004
6737123 Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system May. 18, 2004
6726955 Method of controlling the crystal structure of polycrystalline silicon Apr. 27, 2004
6723421 Semiconductor with coordinatively irregular structures Apr. 20, 2004
6723613 Method of forming an isolated-grain rugged polysilicon surface via a temperature ramping step Apr. 20, 2004
6716713 Dopant precursors and ion implantation processes Apr. 6, 2004
6716751 Dopant precursors and processes Apr. 6, 2004
6706336 Silicon-based film, formation method therefor and photovoltaic element Mar. 16, 2004
6693022 CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures Feb. 17, 2004
6686230 Semiconducting devices and method of making thereof Feb. 3, 2004
6670543 Thin-film solar cells and method of making Dec. 30, 2003
6667525 Semiconductor device having hetero grain stack gate Dec. 23, 2003
6660572 Thin film semiconductor device and method for producing the same Dec. 9, 2003
6635583 Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating Oct. 21, 2003
6620247 Thin polycrystalline silicon film forming apparatus Sep. 16, 2003
6617010 Semiconductor thin film and thin film device Sep. 9, 2003
6610361 Multi-layer assemblies with predetermined stress profile and method for producing same Aug. 26, 2003
6610374 Method of annealing large area glass substrates Aug. 26, 2003
6589822 Manufacturing method for top-gate type and bottom-gate type thin film transistors Jul. 8, 2003

1 2 3 4 5 6 7 8 9 10 11










 
 
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