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Class Information
Number: 257/E21.101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/205.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.107 Deposition of diamond (epo) 11
257/E21.108 Epitaxial deposition of group iii-v compound (epo) 322
257/E21.102 Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) 233


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
4409605 Amorphous semiconductors equivalent to crystalline semiconductors Oct. 11, 1983
4406765 Apparatus and process for production of amorphous semiconductor Sep. 27, 1983
4401506 Process for producing semiconductor device Aug. 30, 1983
4398343 Method of making semi-amorphous semiconductor device Aug. 16, 1983
4395433 Method for manufacturing a semiconductor device having regions of different thermal conductivity Jul. 26, 1983
4388342 Method for chemical vapor deposition Jun. 14, 1983
4363828 Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas Dec. 14, 1982
4362766 Method for preparing a protective amorphous silicon passivating film on a semiconductor device Dec. 7, 1982
4357179 Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique Nov. 2, 1982
4348428 Method of depositing doped amorphous semiconductor on a substrate Sep. 7, 1982
4310965 Process for producing a dielectric insulator separated substrate Jan. 19, 1982
4311546 Method of manufacturing semiconductor device Jan. 19, 1982
4302763 Semiconductor device Nov. 24, 1981
4292343 Method of manufacturing semiconductor bodies composed of amorphous silicon Sep. 29, 1981
4270960 Method of manufacturing a semiconductor device utilizing a mono-polycrystalline deposition on a predeposited amorphous layer Jun. 2, 1981
4263087 Process for producing epitaxial layers Apr. 21, 1981
4226898 Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process Oct. 7, 1980
4217374 Amorphous semiconductors equivalent to crystalline semiconductors Aug. 12, 1980
4196438 Article and device having an amorphous silicon containing a halogen and method of fabrication Apr. 1, 1980
4191788 Method to reduce breakage of V-grooved <100> silicon substrate Mar. 4, 1980
4188244 Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition Feb. 12, 1980
4180618 Thin silicon film electronic device Dec. 25, 1979
4178415 Modified amorphous semiconductors and method of making the same Dec. 11, 1979
4173661 Method for depositing thin layers of materials by decomposing a gas to yield a plasma Nov. 6, 1979
4171996 Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process Oct. 23, 1979
4164436 Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source Aug. 14, 1979
4146413 Method of producing a P-N junction utilizing polycrystalline silicon Mar. 27, 1979
4142195 Schottky barrier semiconductor device and method of making same Feb. 27, 1979
4134125 Passivation of metallized semiconductor substrates Jan. 9, 1979
4117504 Heterogeneous semiconductor structure with composition gradient and method for producing same Sep. 26, 1978
4115163 Method of growing epitaxial semiconductor films utilizing radiant heating Sep. 19, 1978
4113532 Process for producing large-size substrate-based semiconductor material utilizing vapor-phase deposition and subsequent resolidification Sep. 12, 1978
4102766 Process for doping high purity silicon in an arc heater Jul. 25, 1978
4068020 Method of depositing elemental amorphous silicon Jan. 10, 1978
4064521 Semiconductor device having a body of amorphous silicon Dec. 20, 1977
4062034 Semiconductor device having a hetero junction Dec. 6, 1977
4016016 Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices Apr. 5, 1977

1 2 3 4 5 6 7 8 9 10 11










 
 
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