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Class Information
Number: 257/E21.101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/205.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.107 Deposition of diamond (epo) 11
257/E21.108 Epitaxial deposition of group iii-v compound (epo) 322
257/E21.102 Epitaxial deposition of group iv elements, e.g., si, ge, c (epo) 233

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
4581113 Process for forming an amorphous silicon film Apr. 8, 1986
4578696 Thin film semiconductor device Mar. 25, 1986
4571348 Reducing hydrogen content of vacuum deposited films Feb. 18, 1986
4569855 Method of forming deposition film Feb. 11, 1986
4555300 Method for producing single crystal layers on insulators Nov. 26, 1985
4551352 Method of making P-type hydrogenated amorphous silicon Nov. 5, 1985
4550014 Method for production of free-standing polycrystalline boron phosphide film Oct. 29, 1985
4546009 High-mobility amorphous silicon displaying non-dispersive transport properties Oct. 8, 1985
4544423 Amorphous silicon semiconductor and process for same Oct. 1, 1985
4543267 Method of making a non-single-crystalline semi-conductor layer on a substrate Sep. 24, 1985
4540466 Method of fabricating semiconductor device by dry process utilizing photochemical reaction, and apparatus therefor Sep. 10, 1985
4533564 Method of manufacturing an electrophotographic photoreceptor Aug. 6, 1985
4532199 Method of forming amorphous silicon film Jul. 30, 1985
4529456 Method of forming bifets by forming isolation regions connected by diffusion in semiconductor substrate and epitaxial layer Jul. 16, 1985
4526644 Treatment device utilizing plasma Jul. 2, 1985
4523370 Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction Jun. 18, 1985
4523544 Apparatus for glow discharge deposition of a thin film Jun. 18, 1985
4522662 CVD lateral epitaxial growth of silicon over insulators Jun. 11, 1985
4520380 Amorphous semiconductors equivalent to crystalline semiconductors May. 28, 1985
4517223 Method of making amorphous semiconductor alloys and devices using microwave energy May. 14, 1985
4509451 Electron beam induced chemical vapor deposition Apr. 9, 1985
4505950 Method of manufacturing a multiple-layer, non-single-crystalline semiconductor on a substrate Mar. 19, 1985
4504518 Method of making amorphous semiconductor alloys and devices using microwave energy Mar. 12, 1985
4503807 Chemical vapor deposition apparatus Mar. 12, 1985
4500565 Deposition process Feb. 19, 1985
4496450 Process for the production of a multicomponent thin film Jan. 29, 1985
4495218 Process for forming thin film Jan. 22, 1985
4492736 Process for forming microcrystalline silicon material and product Jan. 8, 1985
4492810 Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices Jan. 8, 1985
4492716 Method of making non-crystalline semiconductor layer Jan. 8, 1985
4490208 Method of producing thin films of silicon Dec. 25, 1984
4486461 Method and apparatus for gas phase treating substrates Dec. 4, 1984
4485389 Amorphous semiconductors equivalent to crystalline semiconductors Nov. 27, 1984
4485128 Bandgap control in amorphous semiconductors Nov. 27, 1984
4485121 Method for producing a fluorine-containing amorphous semiconductor Nov. 27, 1984
4481230 Method of depositing a semiconductor layer from a glow discharge Nov. 6, 1984
4466992 Healing pinhole defects in amorphous silicon films Aug. 21, 1984
4465706 Bandgap control in amorphous semiconductors Aug. 14, 1984
4461783 Non-single-crystalline semiconductor layer on a substrate and method of making same Jul. 24, 1984
4460416 Method for fabricating in-situ doped polysilicon employing overdamped gradually increasing gas flow rates with constant flow rate ratio Jul. 17, 1984
4459163 Amorphous semiconductor method Jul. 10, 1984
4452828 Production of amorphous silicon film Jun. 5, 1984
4451538 High hydrogen amorphous silicon May. 29, 1984
4448801 Process for forming deposition film May. 15, 1984
4448632 Method of fabricating semiconductor devices May. 15, 1984
4446168 Method of forming amorphous silicon May. 1, 1984
4443488 Plasma ion deposition process Apr. 17, 1984
4441973 Method for preparing a thin film amorphous silicon having high reliability Apr. 10, 1984
4424193 Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members Jan. 3, 1984
4419179 Method of vapor phase growth Dec. 6, 1983

1 2 3 4 5 6 7 8 9 10 11

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