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Class Information
Number: 257/E21.1
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iii-v compound (epo) > Doping during epitaxial deposition (epo)
Description: This subclass is indented under subclass E21.097. This subclass is substantially the same in scope as ECLA classification H01L21/203C6.










Patents under this class:

Patent Number Title Of Patent Date Issued
8420516 Method for producing n-type group III nitride semiconductor Apr. 16, 2013
8253220 Nitride semiconductor device and method for fabricating the same Aug. 28, 2012
8110486 Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insulating layer of SOI wafer Feb. 7, 2012
8076700 P-N junction for use as an RF mixer from GHZ to THZ frequencies Dec. 13, 2011
7982277 High-efficiency thinned imager with reduced boron updiffusion Jul. 19, 2011
7718518 Low temperature doped silicon layer formation May. 18, 2010
7326585 Forming process of thin film pattern and manufacturing process of device, electro-optical apparatus and electronic apparatus Feb. 5, 2008
6991955 Compound semiconductor, method for producing the same, semiconductor light-emitting device and method for fabricating the same Jan. 31, 2006
6953740 Highly doped III-nitride semiconductors Oct. 11, 2005
6888170 Highly doped III-nitride semiconductors May. 3, 2005
6777315 Method of controlling the resistivity of Gallium Nitride Aug. 17, 2004
6544867 Molecular beam epitaxy (MBE) growth of semi-insulating C-doped GaN Apr. 8, 2003
6281099 Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type Aug. 28, 2001
5753545 Effective constant doping in a graded compositional alloy May. 19, 1998
5183779 Method for doping GaAs with high vapor pressure elements Feb. 2, 1993
5169798 Forming a semiconductor layer using molecular beam epitaxy Dec. 8, 1992
5106766 Method of making a semiconductor device that comprises p-type III-V semiconductor material Apr. 21, 1992
5100832 Process for preparing epitaxial compound semiconductor Mar. 31, 1992
5001534 Heterojunction bipolar transistor Mar. 19, 1991
4847216 Process for the deposition by epitaxy of a doped material Jul. 11, 1989
4780748 Field-effect transistor having a delta-doped ohmic contact Oct. 25, 1988
4772934 Delta-doped ohmic metal to semiconductor contacts Sep. 20, 1988
4672414 Planar heterojunction bipolar device and method Jun. 9, 1987
4470192 Method of selected area doping of compound semiconductors Sep. 11, 1984
4447276 Molecular beam epitaxy electrolytic dopant source May. 8, 1984
4233092 Utilizing lead compounds of sulphur, selenium and tellurium as dopant sources Nov. 11, 1980
4194935 Method of making high mobility multilayered heterojunction devices employing modulated doping Mar. 25, 1980
4163237 High mobility multilayered heterojunction devices employing modulated doping Jul. 31, 1979
4120700 Method of producing p-n junction type elements by ionized cluster beam deposition and ion-implantation Oct. 17, 1978
3941624 Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy Mar. 2, 1976











 
 
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