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Class Information
Number: 257/E21.099
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iii-v compound (epo) > Deposition on insulating or metallic substrate (epo)
Description: This subclass is indented under subclass E21.097. This subclass is substantially the same in scope as ECLA classification H01L21/203C3.










Patents under this class:

Patent Number Title Of Patent Date Issued
8623747 Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices Jan. 7, 2014
8492243 Method for the production of a semiconductor structure Jul. 23, 2013
8188573 Nitride semiconductor structure May. 29, 2012
7955959 Method for manufacturing GaN-based film LED Jun. 7, 2011
7811902 Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same Oct. 12, 2010
7790584 Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same Sep. 7, 2010
7439165 Method of fabricating tensile strained layers and compressive strain layers for a CMOS device Oct. 21, 2008
7244977 Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage device Jul. 17, 2007
6918961 Group III nitride compound semiconductor device and producing method therefor Jul. 19, 2005
6638838 Semiconductor structure including a partially annealed layer and method of forming the same Oct. 28, 2003
6593016 Group III nitride compound semiconductor device and producing method thereof Jul. 15, 2003
6440214 Method of growing a semiconductor layer Aug. 27, 2002
6362496 Semiconductor light emitting device having a GaN-based semiconductor layer, method for producing the same and method for forming a GaN-based semiconductor layer Mar. 26, 2002
6291318 Growth of GaN on sapphire with MSE grown buffer layer Sep. 18, 2001
6180270 Low defect density gallium nitride epilayer and method of preparing the same Jan. 30, 2001
6146916 Method for forming a GaN-based semiconductor light emitting device Nov. 14, 2000
6064078 Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities May. 16, 2000
4523211 Semiconductor device Jun. 11, 1985
4095331 Fabrication of an epitaxial layer diode in aluminum nitride on sapphire Jun. 20, 1978











 
 
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