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Class Information
Number: 257/E21.098
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iii-v compound (epo) > Deposition on semiconductor substrate not being an group iii-v compound (epo)
Description: This subclass is indented under subclass E21.097. This subclass is substantially the same in scope as ECLA classification H01L21/203C2.

Patents under this class:

Patent Number Title Of Patent Date Issued
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8217498 Gallium nitride semiconductor device on SOI and process for making same Jul. 10, 2012
8211726 Method of manufacturing nitride semiconductor light emitting device Jul. 3, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8188573 Nitride semiconductor structure May. 29, 2012
8143646 Stacking fault and twin blocking barrier for integrating III-V on Si Mar. 27, 2012
8119428 Method of manufacturing nitride semiconductor light emitting device Feb. 21, 2012
7968363 Manufacture method for ZnO based semiconductor crystal and light emitting device using same Jun. 28, 2011
7964482 Deposition of group III-nitrides on Ge Jun. 21, 2011
7888779 Method of fabrication InGaAIN film and light-emitting device on a silicon substrate Feb. 15, 2011
7875979 Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the same Jan. 25, 2011
7842532 Nitride semiconductor device and method for manufacturing the same Nov. 30, 2010
7803715 Lithographic patterning for sub-90nm with a multi-layered carbon-based hardmask Sep. 28, 2010
7659137 Structure capable of use for generation or detection of electromagnetic radiation, optical semiconductor device, and fabrication method of the structure Feb. 9, 2010
7399692 III-nitride semiconductor fabrication Jul. 15, 2008
7319064 Nitride based semiconductor device and process for preparing the same Jan. 15, 2008
7276779 III-V group nitride system semiconductor substrate Oct. 2, 2007
6440214 Method of growing a semiconductor layer Aug. 27, 2002
6362496 Semiconductor light emitting device having a GaN-based semiconductor layer, method for producing the same and method for forming a GaN-based semiconductor layer Mar. 26, 2002
6180270 Low defect density gallium nitride epilayer and method of preparing the same Jan. 30, 2001
6146916 Method for forming a GaN-based semiconductor light emitting device Nov. 14, 2000
5492860 Method for growing compound semiconductor layers Feb. 20, 1996
4897367 Process for growing gallium arsenide on silicon substrate Jan. 30, 1990
4872046 Heterojunction semiconductor device with <001> tilt Oct. 3, 1989
4707216 Semiconductor deposition method and device Nov. 17, 1987
4261771 Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy Apr. 14, 1981
4233613 Compound semiconductor wafer Nov. 11, 1980
4226649 Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques Oct. 7, 1980
4147573 Method of depositing III-V compounds on group IV element wafers by the cluster ion technique Apr. 3, 1979

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