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Class Information
Number: 257/E21.098
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iii-v compound (epo) > Deposition on semiconductor substrate not being an group iii-v compound (epo)
Description: This subclass is indented under subclass E21.097. This subclass is substantially the same in scope as ECLA classification H01L21/203C2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7399692 |
III-nitride semiconductor fabrication |
Jul. 15, 2008 |
| 7319064 |
Nitride based semiconductor device and process for preparing the same |
Jan. 15, 2008 |
| 7276779 |
III-V group nitride system semiconductor substrate |
Oct. 2, 2007 |
| 6440214 |
Method of growing a semiconductor layer |
Aug. 27, 2002 |
| 6362496 |
Semiconductor light emitting device having a GaN-based semiconductor layer, method for producing the same and method for forming a GaN-based semiconductor layer |
Mar. 26, 2002 |
| 6180270 |
Low defect density gallium nitride epilayer and method of preparing the same |
Jan. 30, 2001 |
| 6146916 |
Method for forming a GaN-based semiconductor light emitting device |
Nov. 14, 2000 |
| 5492860 |
Method for growing compound semiconductor layers |
Feb. 20, 1996 |
| 4897367 |
Process for growing gallium arsenide on silicon substrate |
Jan. 30, 1990 |
| 4872046 |
Heterojunction semiconductor device with <001> tilt |
Oct. 3, 1989 |
| 4707216 |
Semiconductor deposition method and device |
Nov. 17, 1987 |
| 4261771 |
Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy |
Apr. 14, 1981 |
| 4233613 |
Compound semiconductor wafer |
Nov. 11, 1980 |
| 4226649 |
Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques |
Oct. 7, 1980 |
| 4147573 |
Method of depositing III-V compounds on group IV element wafers by the cluster ion technique |
Apr. 3, 1979 |
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