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Class Information
Number: 257/E21.097
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203C.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.099 Deposition on insulating or metallic substrate (epo) 19
257/E21.098 Deposition on semiconductor substrate not being an group iii-v compound (epo) 30
257/E21.1 Doping during epitaxial deposition (epo) 30


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
5346581 Method of making a compound semiconductor device Sep. 13, 1994
5300186 Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same Apr. 5, 1994
5248376 Process for thermal-etching treatment of compound semiconductor substrate used in molecular beam epitaxy and apparatus for performing same Sep. 28, 1993
5231048 Microwave energized deposition process wherein the deposition is carried out at a pressure less than the pressure of the minimum point on the deposition system's Paschen curve Jul. 27, 1993
5185287 Method for producing a quantum well structure Feb. 9, 1993
5130269 Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same Jul. 14, 1992
5094974 Growth of III-V films by control of MBE growth front stoichiometry Mar. 10, 1992
5091335 MBE growth technology for high quality strained III-V layers Feb. 25, 1992
5029176 Monolithic multiple-wavelength laser array Jul. 2, 1991
5023198 Method for fabricating self-stabilized semiconductor gratings Jun. 11, 1991
5013683 Method for growing tilted superlattices May. 7, 1991
4999316 Method for forming tapered laser or waveguide optoelectronic structures Mar. 12, 1991
4994140 Method capable of forming a fine pattern without crystal defects Feb. 19, 1991
4980750 Semiconductor crystal Dec. 25, 1990
4960720 Method of growing compound semiconductor thin film using multichamber smoothing process Oct. 2, 1990
4941024 Semiconductor apparatus Jul. 10, 1990
4939102 Method of growing III-V semiconductor layers with high effective hole concentration Jul. 3, 1990
4876218 Method of growing GaAs films on Si or GaAs substrates using ale Oct. 24, 1989
4855255 Tapered laser or waveguide optoelectronic method Aug. 8, 1989
4843029 Method of manufacturing a heteroepitaxial compound semiconductor device using photo smoothing between layer growth Jun. 27, 1989
4829022 Method for forming thin films of compound semiconductors by flow rate modulation epitaxy May. 9, 1989
4824518 Method for the production of semiconductor devices Apr. 25, 1989
4814838 Semiconductor device and method of manufacturing the same Mar. 21, 1989
4799088 High electron mobility single heterojunction semiconductor devices and methods for production thereof Jan. 17, 1989
4732648 Method of preparing semiconductor substrates Mar. 22, 1988
4622083 Molecular beam epitaxial process Nov. 11, 1986
4558336 MBE Growth technique for matching superlattices grown on GaAs substrates Dec. 10, 1985
4544418 Process for high temperature surface reactions in semiconductor material Oct. 1, 1985
4534840 Method for forming a compound semiconductor film Aug. 13, 1985
4517047 MBE growth technique for matching superlattices grown on GaAs substrates May. 14, 1985
4477311 Process and apparatus for fabricating a semiconductor device Oct. 16, 1984
4430183 Method of making coherent multilayer crystals Feb. 7, 1984
4404732 Self-aligned extended epitaxy mesfet fabrication process Sep. 20, 1983
4383872 Method of growing a doped III-V alloy layer by molecular beam epitaxy utilizing a supplemental molecular beam of lead May. 17, 1983
4330360 Molecular beam deposition technique using gaseous sources of group V elements May. 18, 1982
4297783 Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer Nov. 3, 1981
4286545 Apparatus for vapor depositing a stoichiometric compound Sep. 1, 1981
4281029 Method of coating with a stoichiometric compound Jul. 28, 1981
4261771 Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy Apr. 14, 1981
4249190 Floating gate vertical FET Feb. 3, 1981
4205329 Periodic monolayer semiconductor structures grown by molecular beam epitaxy May. 27, 1980
4197814 Apparatus for forming compound semiconductor thin-films Apr. 15, 1980
4198644 Tunnel diode Apr. 15, 1980
4186410 Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors Jan. 29, 1980
4171234 Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles Oct. 16, 1979
4103312 Semiconductor memory devices Jul. 25, 1978
4099305 Fabrication of mesa devices by MBE growth over channeled substrates Jul. 11, 1978
4086108 Selective doping crystal growth method Apr. 25, 1978
4071383 Process for fabrication of dielectric optical waveguide devices Jan. 31, 1978
4058430 Method for producing compound thin films Nov. 15, 1977

1 2 3 4 5










 
 
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