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Class Information
Number: 257/E21.097
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203C.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.099 Deposition on insulating or metallic substrate (epo) 19
257/E21.098 Deposition on semiconductor substrate not being an group iii-v compound (epo) 30
257/E21.1 Doping during epitaxial deposition (epo) 30

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8685773 Method for making semiconductor epitaxial structure Apr. 1, 2014
8680581 Method for producing group III nitride semiconductor and template substrate Mar. 25, 2014
8664028 Semiconductor device production process Mar. 4, 2014
8658449 Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same Feb. 25, 2014
8652948 Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element Feb. 18, 2014
8652958 Vertical deep ultraviolet light emitting diodes Feb. 18, 2014
8647929 Semiconductor devices and methods of manufacturing thereof Feb. 11, 2014
8647904 Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus Feb. 11, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8637848 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement Jan. 28, 2014
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8592823 Compound semiconductor device and method for manufacturing the same Nov. 26, 2013
8592298 Fabrication of floating guard rings using selective regrowth Nov. 26, 2013
8557622 Epitaxial growth of in-plane nanowires and nanowire devices Oct. 15, 2013
8524581 GaN epitaxy with migration enhancement and surface energy modification Sep. 3, 2013
8524614 III-V compound semiconductor material passivation with crystalline interlayer Sep. 3, 2013
8435879 Method for making group III nitride articles May. 7, 2013
8435820 Patterned substrate for hetero-epitaxial growth of group-III nitride film May. 7, 2013
8420439 Method of producing a radiation-emitting thin film component and radiation-emitting thin film component Apr. 16, 2013
8415751 Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain Apr. 9, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8383439 Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method Feb. 26, 2013
8361869 Method for manufacturing suspended fin and gate-all-around field effect transistor Jan. 29, 2013
8349078 Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device Jan. 8, 2013
8334154 Method for the production of quantum dots embedded in a matrix, and quantum dots embedded in a matrix produced using the method Dec. 18, 2012
8329571 Deposition methods for the formation of III/V semiconductor materials, and related structures Dec. 11, 2012
8318515 Growth methodology for light emitting semiconductor devices Nov. 27, 2012
8318612 Methods for improving the quality of group III-nitride materials and structures produced by the methods Nov. 27, 2012
8314016 Low-defect density gallium nitride semiconductor structures and fabrication methods Nov. 20, 2012
8309986 Tri-gate field-effect transistors formed by aspect ratio trapping Nov. 13, 2012
8304791 Nitride-based semiconductor light emitting device and methods of manufacturing the same Nov. 6, 2012
8294245 GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture Oct. 23, 2012
8288186 Substrate for growing a III-V light emitting device Oct. 16, 2012
8283239 Process for growth of low dislocation density GaN Oct. 9, 2012
8273592 Method of manufacturing group-III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp Sep. 25, 2012
8236593 Methods for improving the quality of epitaxially-grown semiconductor materials Aug. 7, 2012
8227327 Method for epitaxial growth Jul. 24, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8202793 Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same Jun. 19, 2012
8193016 Semiconductor laser device and method of manufacturing the same Jun. 5, 2012
8188573 Nitride semiconductor structure May. 29, 2012
8178427 Epitaxial methods for reducing surface dislocation density in semiconductor materials May. 15, 2012
8173469 Fabrication method of light emitting device May. 8, 2012
8154050 Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the same Apr. 10, 2012
8148252 Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods Apr. 3, 2012
8148241 Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films Apr. 3, 2012
8143615 Electron beam emitting device with a superlattice structure Mar. 27, 2012
8143646 Stacking fault and twin blocking barrier for integrating III-V on Si Mar. 27, 2012
8133806 Systems and methods for forming semiconductor materials by atomic layer deposition Mar. 13, 2012

1 2 3 4 5

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