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Class Information
Number: 257/E21.097
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203C.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7439165 |
Method of fabricating tensile strained layers and compressive strain layers for a CMOS device |
Oct. 21, 2008 |
| 7407865 |
Epitaxial growth method |
Aug. 5, 2008 |
| 7399692 |
III-nitride semiconductor fabrication |
Jul. 15, 2008 |
| 7361576 |
Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
Apr. 22, 2008 |
| 7332417 |
Semiconductor structures with structural homogeneity |
Feb. 19, 2008 |
| 7288430 |
Method of fabricating heteroepitaxial microstructures |
Oct. 30, 2007 |
| 7253499 |
III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
Aug. 7, 2007 |
| 7250360 |
Single step, high temperature nucleation process for a lattice mismatched substrate |
Jul. 31, 2007 |
| 7245017 |
Liquid discharge head and manufacturing method thereof |
Jul. 17, 2007 |
| 7220658 |
Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
May. 22, 2007 |
| 7208393 |
Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
Apr. 24, 2007 |
| 7125735 |
Method of fabricating semiconductor device |
Oct. 24, 2006 |
| 6953703 |
Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen |
Oct. 11, 2005 |
| 6921726 |
Growing smooth semiconductor layers |
Jul. 26, 2005 |
| 6856005 |
Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same |
Feb. 15, 2005 |
| 6830949 |
Method for producing group-III nitride compound semiconductor device |
Dec. 14, 2004 |
| 6821806 |
Method for forming compound semiconductor layer and compound semiconductor apparatus |
Nov. 23, 2004 |
| 6787010 |
Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
Sep. 7, 2004 |
| 6784085 |
MIIIN based materials and methods and apparatus for producing same |
Aug. 31, 2004 |
| 6692568 |
Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon |
Feb. 17, 2004 |
| 6642070 |
Electrically pumped long-wavelength VCSEL and methods of fabrication |
Nov. 4, 2003 |
| 6596079 |
III-V nitride substrate boule and method of making and using the same |
Jul. 22, 2003 |
| 6521042 |
Semiconductor growth method |
Feb. 18, 2003 |
| 6489175 |
Electrically pumped long-wavelength VCSEL and methods of fabrication |
Dec. 3, 2002 |
| 6486044 |
Band gap engineering of amorphous Al-Ga-N alloys |
Nov. 26, 2002 |
| 6447604 |
METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRO |
Sep. 10, 2002 |
| 6368983 |
Multi-layer wafer fabrication |
Apr. 9, 2002 |
| 6242326 |
Method for fabricating compound semiconductor substrate having quantum dot array structure |
Jun. 5, 2001 |
| 6197441 |
Cubic nitride semiconductor device and fabrication method of the same |
Mar. 6, 2001 |
| 6123768 |
Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
Sep. 26, 2000 |
| 5985025 |
Semiconductor growth method |
Nov. 16, 1999 |
| 5948161 |
Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface |
Sep. 7, 1999 |
| 5945690 |
Compound semiconductor device |
Aug. 31, 1999 |
| 5827751 |
Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically |
Oct. 27, 1998 |
| 5763291 |
Method of making semiconductor laser |
Jun. 9, 1998 |
| 5762706 |
Method of forming compound semiconductor device |
Jun. 9, 1998 |
| 5759264 |
Method for vapor-phase growth |
Jun. 2, 1998 |
| 5725674 |
Device and method for epitaxially growing gallium nitride layers |
Mar. 10, 1998 |
| 5648666 |
Double-epitaxy heterojunction bipolar transistors for high speed performance |
Jul. 15, 1997 |
| 5625204 |
Compound semiconductors and a method for thin film growth |
Apr. 29, 1997 |
| 5603765 |
Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy |
Feb. 18, 1997 |
| 5602418 |
Nitride based semiconductor device and manufacture thereof |
Feb. 11, 1997 |
| 5593917 |
Method of making semiconductor components with electrochemical recovery of the substrate |
Jan. 14, 1997 |
| 5491106 |
Method for growing a compound semiconductor and a method for producing a semiconductor laser |
Feb. 13, 1996 |
| 5484664 |
Hetero-epitaxially grown compound semiconductor substrate |
Jan. 16, 1996 |
| 5441913 |
Process of making a semiconductor epitaxial substrate |
Aug. 15, 1995 |
| 5436468 |
Ordered mixed crystal semiconductor superlattice device |
Jul. 25, 1995 |
| 5415128 |
Rotation induced superlattice |
May. 16, 1995 |
| 5385862 |
Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
Jan. 31, 1995 |
| 5367980 |
Method of producing defect-free perfect surfaces |
Nov. 29, 1994 |
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