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Class Information
Number: 257/E21.096
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Deposition of diamond (epo)
Description: This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203A.

Patents under this class:

Patent Number Title Of Patent Date Issued
8436439 Semiconductor device and method of forming a shielding layer over a semiconductor die after forming a build-up interconnect structure May. 7, 2013
8158455 Boron-doped diamond semiconductor Apr. 17, 2012
8039301 Gate after diamond transistor Oct. 18, 2011
7939367 Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate May. 10, 2011
7888171 Fabricating a gallium nitride layer with diamond layers Feb. 15, 2011
7884373 Gallium nitride layer with diamond layers Feb. 8, 2011
7736435 Method of producing single crystal Jun. 15, 2010
7695564 Thermal management substrate Apr. 13, 2010
7288815 Semiconductor device and manufacturing method thereof Oct. 30, 2007

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