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Class Information
Number: 257/E21.095
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iv element, e.g., si, ge (epo) > Epitaxial deposition of diamond (epo)
Description: This subclass is indented under subclass E21.092. This subclass is substantially the same in scope as ECLA classification H01L21/203B4.










Patents under this class:

Patent Number Title Of Patent Date Issued
8482422 Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using thin film deposition apparatus Jul. 9, 2013
8158455 Boron-doped diamond semiconductor Apr. 17, 2012
8067296 Method of manufacturing semiconductor device Nov. 29, 2011
7939367 Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate May. 10, 2011
7768091 Diamond ultraviolet sensor Aug. 3, 2010
7736435 Method of producing single crystal Jun. 15, 2010
7695564 Thermal management substrate Apr. 13, 2010
7390695 Diamond substrate and manufacturing method thereof Jun. 24, 2008
6352884 Method for growing crystals having impurities and crystals prepared thereby Mar. 5, 2002











 
 
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