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Class Information
Number: 257/E21.093
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iv element, e.g., si, ge (epo) > Deposition on semiconductor substrate being different from deposited semiconductor material; i.e., formation of heterojunctions (epo)
Description: This subclass is indented under subclass E21.092. This subclass is substantially the same in scope as ECLA classification H01L21/203B2.

Patents under this class:

Patent Number Title Of Patent Date Issued
8686396 Non-polar ultraviolet light emitting device and method for fabricating same Apr. 1, 2014
8658451 Activating GaN LEDs by laser spike annealing and flash annealing Feb. 25, 2014
8629478 Fin structure for high mobility multiple-gate transistor Jan. 14, 2014
8507365 Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates Aug. 13, 2013
8492245 Methods for making thin layers of crystalline materials Jul. 23, 2013
8460959 Fast thermal annealing of GaN LEDs Jun. 11, 2013
8304756 Deep ultraviolet light emitting device and method for fabricating same Nov. 6, 2012
8247261 Thin substrate fabrication using stress-induced substrate spalling Aug. 21, 2012
8211726 Method of manufacturing nitride semiconductor light emitting device Jul. 3, 2012
8119428 Method of manufacturing nitride semiconductor light emitting device Feb. 21, 2012
8093143 Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side Jan. 10, 2012
8017504 Transistor having a high-k metal gate stack and a compressively stressed channel Sep. 13, 2011
8012839 Method for fabricating a semiconductor device having an epitaxial channel and transistor having same Sep. 6, 2011
7989295 Method of manufacturing semiconductor device Aug. 2, 2011
7977134 Nitride-based semiconductor light emitting diode and method of manufacturing the same Jul. 12, 2011
7968363 Manufacture method for ZnO based semiconductor crystal and light emitting device using same Jun. 28, 2011
7910445 Semiconductor device and method of fabricating the same Mar. 22, 2011
7902008 Methods for fabricating a stressed MOS device Mar. 8, 2011
7902025 Method of manufacturing semiconductor device Mar. 8, 2011
7883979 Method for manufacturing a semiconductor device with reduced floating body effect Feb. 8, 2011
7875535 Compound semiconductor device using SiC substrate and its manufacture Jan. 25, 2011
7842532 Nitride semiconductor device and method for manufacturing the same Nov. 30, 2010
7842537 Stressed semiconductor using carbon and method for producing the same Nov. 30, 2010
7842973 Semiconductor device and manufacturing method of the same Nov. 30, 2010
7759229 Charge-free method of forming nanostructures on a substrate Jul. 20, 2010
7671383 Semiconductor device and method of producing the same Mar. 2, 2010
7510904 Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector Mar. 31, 2009
7456034 Nitride semiconductor device and method for fabricating the same Nov. 25, 2008
7393762 Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate Jul. 1, 2008
7391098 Semiconductor substrate, semiconductor device and method of manufacturing the same Jun. 24, 2008
7297589 Transistor device and method Nov. 20, 2007
7241647 Graded semiconductor layer Jul. 10, 2007
7229901 Fabrication of strained heterojunction structures Jun. 12, 2007
6403454 Silicon semiconductor devices with .delta.-doped layers Jun. 11, 2002
5633194 Low temperature ion-beam assisted deposition methods for realizing SiGe/Si heterostructure May. 27, 1997
5047365 Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth Sep. 10, 1991
4885614 Semiconductor device with crystalline silicon-germanium-carbon alloy Dec. 5, 1989
4861393 Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy Aug. 29, 1989
4554030 Method of manufacturing a semiconductor device by means of a molecular beam technique Nov. 19, 1985
4529455 Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy Jul. 16, 1985
4119994 Heterojunction and process for fabricating same Oct. 10, 1978

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