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Class Information
Number: 257/E21.092
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iv element, e.g., si, ge (epo)
Description: This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203B.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.094 Deposition on insulating or meta llic substrate (epo) 61
257/E21.093 Deposition on semiconductor substrate being different from deposited semiconductor material; i.e., formation of heterojunctions (epo) 41
257/E21.095 Epitaxial deposition of diamond (epo) 9

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8709957 Spalling utilizing stressor layer portions Apr. 29, 2014
8703586 Apparatus for forming deposited film and method for forming deposited film Apr. 22, 2014
8685845 Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas Apr. 1, 2014
8664069 Semiconductor structure and process thereof Mar. 4, 2014
8647929 Semiconductor devices and methods of manufacturing thereof Feb. 11, 2014
8604529 Apparatus with photodiode region in multiple epitaxial layers Dec. 10, 2013
8524559 Manufacturing method of power transistor device Sep. 3, 2013
8481357 Thin film solar cell with ceramic handling layer Jul. 9, 2013
8471321 Semiconductor device comprising capacitor and method of fabricating the same Jun. 25, 2013
8361869 Method for manufacturing suspended fin and gate-all-around field effect transistor Jan. 29, 2013
8350270 Silicon carbide semiconductor device and method for manufacturing the same Jan. 8, 2013
8334214 Susceptor treatment method and a method for treating a semiconductor manufacturing apparatus Dec. 18, 2012
8314015 Silicon surface modification for the electrochemical synthesis of silicon particles in suspension Nov. 20, 2012
8309986 Tri-gate field-effect transistors formed by aspect ratio trapping Nov. 13, 2012
8293623 Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate Oct. 23, 2012
8193592 MOSFET with asymmetrical extension implant Jun. 5, 2012
8154050 Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the same Apr. 10, 2012
8138070 Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles Mar. 20, 2012
8120060 Monolithically integrated silicon and III-V electronics Feb. 21, 2012
8114755 Method of manufacturing semiconductor device Feb. 14, 2012
8115195 Semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer Feb. 14, 2012
8076197 Image sensor and method for fabricating the same Dec. 13, 2011
8071442 Transistor with embedded Si/Ge material having reduced offset to the channel region Dec. 6, 2011
8012860 Atomic layer deposition for functionalizing colloidal and semiconductor particles Sep. 6, 2011
7999250 Silicon-germanium-carbon semiconductor structure Aug. 16, 2011
7977706 Tri-gate field-effect transistors formed by aspect ratio trapping Jul. 12, 2011
7960267 Method for making a stressed non-volatile memory device Jun. 14, 2011
7960798 Structure and method to form multilayer embedded stressors Jun. 14, 2011
7951685 Method for manufacturing semiconductor epitaxial crystal substrate May. 31, 2011
7902053 Method of processing semiconductor wafer Mar. 8, 2011
7901968 Heteroepitaxial deposition over an oxidized surface Mar. 8, 2011
7897489 Selective activation of hydrogen passivated silicon and germanium surfaces Mar. 1, 2011
7888221 Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions Feb. 15, 2011
7888266 Band gap modulated optical sensor Feb. 15, 2011
7829401 MOSFET with asymmetrical extension implant Nov. 9, 2010
7816221 Dielectric ledge for high frequency devices Oct. 19, 2010
7811907 Method for manufacturing semiconductor device and epitaxial growth equipment Oct. 12, 2010
7790593 Method for tuning epitaxial growth by interfacial doping and structure including same Sep. 7, 2010
7776698 Selective formation of silicon carbon epitaxial layer Aug. 17, 2010
7759229 Charge-free method of forming nanostructures on a substrate Jul. 20, 2010
7737051 Silicon germanium surface layer for high-k dielectric integration Jun. 15, 2010
7696019 Semiconductor devices and methods of manufacturing thereof Apr. 13, 2010
7682915 Pre-epitaxial disposable spacer integration scheme with very low temperature selective epitaxy for enhanced device performance Mar. 23, 2010
7679089 Organic light emitting display Mar. 16, 2010
7666799 Epitaxial growth of relaxed silicon germanium layers Feb. 23, 2010
7642197 Method to improve performance of secondary active components in an esige CMOS technology Jan. 5, 2010
7611975 Method of implanting a substrate and an ion implanter for performing the method Nov. 3, 2009
7608526 Strained layers within semiconductor buffer structures Oct. 27, 2009
7605070 Semiconductor device having contact plug formed in double structure by using epitaxial stack and metal layer and method for fabricating the same Oct. 20, 2009
7589003 GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon Sep. 15, 2009

1 2 3

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