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Class Information
Number: 257/E21.092
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iv element, e.g., si, ge (epo)
Description: This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203B.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7611975 |
Method of implanting a substrate and an ion implanter for performing the method |
Nov. 3, 2009 |
| 7608526 |
Strained layers within semiconductor buffer structures |
Oct. 27, 2009 |
| 7605070 |
Semiconductor device having contact plug formed in double structure by using epitaxial stack and metal layer and method for fabricating the same |
Oct. 20, 2009 |
| 7589003 |
GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon |
Sep. 15, 2009 |
| 7575942 |
Epitaxial substrate, semiconductor element, manufacturing method for epitaxial substrate and method for unevenly distributing dislocations in group III nitride crystal |
Aug. 18, 2009 |
| 7572715 |
Selective epitaxy process with alternating gas supply |
Aug. 11, 2009 |
| 7544997 |
Multi-layer source/drain stressor |
Jun. 9, 2009 |
| 7535089 |
Monolithically integrated light emitting devices |
May. 19, 2009 |
| 7514374 |
Method for manufacturing flat substrates |
Apr. 7, 2009 |
| 7514372 |
Epitaxial growth of relaxed silicon germanium layers |
Apr. 7, 2009 |
| 7504311 |
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS |
Mar. 17, 2009 |
| 7482235 |
Semiconductor device and method of manufacturing the same |
Jan. 27, 2009 |
| 7442657 |
Producing stress-relaxed crystalline layer on a substrate |
Oct. 28, 2008 |
| 7419891 |
Method and system for providing a smaller critical dimension magnetic element utilizing a single layer mask |
Sep. 2, 2008 |
| 7416909 |
Methods for preserving strained semiconductor substrate layers during CMOS processing |
Aug. 26, 2008 |
| 7393762 |
Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate |
Jul. 1, 2008 |
| 7387925 |
Integration of strained Ge into advanced CMOS technology |
Jun. 17, 2008 |
| 7384837 |
Method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications |
Jun. 10, 2008 |
| 7371665 |
Method for fabricating shallow trench isolation layer of semiconductor device |
May. 13, 2008 |
| 7361528 |
Germanium infrared sensor for CMOS imagers |
Apr. 22, 2008 |
| 7354835 |
Method of fabricating CMOS transistor and CMOS transistor fabricated thereby |
Apr. 8, 2008 |
| 7348229 |
Method of manufacturing a semiconductor device and semiconductor device obtained with such a method |
Mar. 25, 2008 |
| 7344933 |
Method of forming device having a raised extension region |
Mar. 18, 2008 |
| 7341883 |
Silicon germanium semiconductive alloy and method of fabricating same |
Mar. 11, 2008 |
| 7338886 |
Implantation-less approach to fabricating strained semiconductor on isolation wafers |
Mar. 4, 2008 |
| 7329596 |
Method for tuning epitaxial growth by interfacial doping and structure including same |
Feb. 12, 2008 |
| 7288430 |
Method of fabricating heteroepitaxial microstructures |
Oct. 30, 2007 |
| 7279369 |
Germanium on insulator fabrication via epitaxial germanium bonding |
Oct. 9, 2007 |
| 7273818 |
Film formation method and apparatus for semiconductor process |
Sep. 25, 2007 |
| 7268027 |
Method of manufacturing photoreceiver |
Sep. 11, 2007 |
| 7247896 |
Semiconductor devices having a field effect transistor and methods of fabricating the same |
Jul. 24, 2007 |
| 7244654 |
Drive current improvement from recessed SiGe incorporation close to gate |
Jul. 17, 2007 |
| 7208362 |
Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel |
Apr. 24, 2007 |
| 7202121 |
Methods for preserving strained semiconductor substrate layers during CMOS processing |
Apr. 10, 2007 |
| 7199011 |
Method to reduce transistor gate to source/drain overlap capacitance by incorporation of carbon |
Apr. 3, 2007 |
| 7183168 |
Method of manufacturing a semiconductor device having a silicide film |
Feb. 27, 2007 |
| 7119032 |
Method to protect internal components of semiconductor processing equipment using layered superlattice materials |
Oct. 10, 2006 |
| 6649032 |
System and method for sputtering silicon films using hydrogen gas mixtures |
Nov. 18, 2003 |
| 6350311 |
Method for forming an epitaxial silicon-germanium layer |
Feb. 26, 2002 |
| 6344116 |
Monocrystalline three-dimensional integrated-circuit technology |
Feb. 5, 2002 |
| 6007624 |
Process for controlling autodoping during epitaxial silicon deposition |
Dec. 28, 1999 |
| 5937318 |
Monocrystalline three-dimensional integrated circuit |
Aug. 10, 1999 |
| 5854495 |
Preparation of nucleated silicon surfaces |
Dec. 29, 1998 |
| 5840589 |
Method for fabricating monolithic and monocrystalline all-semiconductor three-dimensional integrated circuits |
Nov. 24, 1998 |
| 5560777 |
Apparatus for making a semiconductor |
Oct. 1, 1996 |
| 5510011 |
Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature |
Apr. 23, 1996 |
| 5424103 |
Method for making a semiconductor using corona discharge |
Jun. 13, 1995 |
| 5374846 |
Bipolar transistor with a particular base and collector regions |
Dec. 20, 1994 |
| 5254237 |
Plasma arc apparatus for producing diamond semiconductor devices |
Oct. 19, 1993 |
| 5169798 |
Forming a semiconductor layer using molecular beam epitaxy |
Dec. 8, 1992 |
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