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Class Information
Number: 257/E21.092
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo) > Epitaxial deposition of group iv element, e.g., si, ge (epo)
Description: This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203B.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8709957 |
Spalling utilizing stressor layer portions |
Apr. 29, 2014 |
| 8703586 |
Apparatus for forming deposited film and method for forming deposited film |
Apr. 22, 2014 |
| 8685845 |
Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas |
Apr. 1, 2014 |
| 8664069 |
Semiconductor structure and process thereof |
Mar. 4, 2014 |
| 8647929 |
Semiconductor devices and methods of manufacturing thereof |
Feb. 11, 2014 |
| 8604529 |
Apparatus with photodiode region in multiple epitaxial layers |
Dec. 10, 2013 |
| 8524559 |
Manufacturing method of power transistor device |
Sep. 3, 2013 |
| 8481357 |
Thin film solar cell with ceramic handling layer |
Jul. 9, 2013 |
| 8471321 |
Semiconductor device comprising capacitor and method of fabricating the same |
Jun. 25, 2013 |
| 8361869 |
Method for manufacturing suspended fin and gate-all-around field effect transistor |
Jan. 29, 2013 |
| 8350270 |
Silicon carbide semiconductor device and method for manufacturing the same |
Jan. 8, 2013 |
| 8334214 |
Susceptor treatment method and a method for treating a semiconductor manufacturing apparatus |
Dec. 18, 2012 |
| 8314015 |
Silicon surface modification for the electrochemical synthesis of silicon particles in suspension |
Nov. 20, 2012 |
| 8309986 |
Tri-gate field-effect transistors formed by aspect ratio trapping |
Nov. 13, 2012 |
| 8293623 |
Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate |
Oct. 23, 2012 |
| 8193592 |
MOSFET with asymmetrical extension implant |
Jun. 5, 2012 |
| 8154050 |
Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the same |
Apr. 10, 2012 |
| 8138070 |
Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles |
Mar. 20, 2012 |
| 8120060 |
Monolithically integrated silicon and III-V electronics |
Feb. 21, 2012 |
| 8114755 |
Method of manufacturing semiconductor device |
Feb. 14, 2012 |
| 8115195 |
Semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer |
Feb. 14, 2012 |
| 8076197 |
Image sensor and method for fabricating the same |
Dec. 13, 2011 |
| 8071442 |
Transistor with embedded Si/Ge material having reduced offset to the channel region |
Dec. 6, 2011 |
| 8012860 |
Atomic layer deposition for functionalizing colloidal and semiconductor particles |
Sep. 6, 2011 |
| 7999250 |
Silicon-germanium-carbon semiconductor structure |
Aug. 16, 2011 |
| 7977706 |
Tri-gate field-effect transistors formed by aspect ratio trapping |
Jul. 12, 2011 |
| 7960267 |
Method for making a stressed non-volatile memory device |
Jun. 14, 2011 |
| 7960798 |
Structure and method to form multilayer embedded stressors |
Jun. 14, 2011 |
| 7951685 |
Method for manufacturing semiconductor epitaxial crystal substrate |
May. 31, 2011 |
| 7902053 |
Method of processing semiconductor wafer |
Mar. 8, 2011 |
| 7901968 |
Heteroepitaxial deposition over an oxidized surface |
Mar. 8, 2011 |
| 7897489 |
Selective activation of hydrogen passivated silicon and germanium surfaces |
Mar. 1, 2011 |
| 7888221 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions |
Feb. 15, 2011 |
| 7888266 |
Band gap modulated optical sensor |
Feb. 15, 2011 |
| 7829401 |
MOSFET with asymmetrical extension implant |
Nov. 9, 2010 |
| 7816221 |
Dielectric ledge for high frequency devices |
Oct. 19, 2010 |
| 7811907 |
Method for manufacturing semiconductor device and epitaxial growth equipment |
Oct. 12, 2010 |
| 7790593 |
Method for tuning epitaxial growth by interfacial doping and structure including same |
Sep. 7, 2010 |
| 7776698 |
Selective formation of silicon carbon epitaxial layer |
Aug. 17, 2010 |
| 7759229 |
Charge-free method of forming nanostructures on a substrate |
Jul. 20, 2010 |
| 7737051 |
Silicon germanium surface layer for high-k dielectric integration |
Jun. 15, 2010 |
| 7696019 |
Semiconductor devices and methods of manufacturing thereof |
Apr. 13, 2010 |
| 7682915 |
Pre-epitaxial disposable spacer integration scheme with very low temperature selective epitaxy for enhanced device performance |
Mar. 23, 2010 |
| 7679089 |
Organic light emitting display |
Mar. 16, 2010 |
| 7666799 |
Epitaxial growth of relaxed silicon germanium layers |
Feb. 23, 2010 |
| 7642197 |
Method to improve performance of secondary active components in an esige CMOS technology |
Jan. 5, 2010 |
| 7611975 |
Method of implanting a substrate and an ion implanter for performing the method |
Nov. 3, 2009 |
| 7608526 |
Strained layers within semiconductor buffer structures |
Oct. 27, 2009 |
| 7605070 |
Semiconductor device having contact plug formed in double structure by using epitaxial stack and metal layer and method for fabricating the same |
Oct. 20, 2009 |
| 7589003 |
GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon |
Sep. 15, 2009 |
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