 |
|
 |
| |
 |
|
Class Information
Number: 257/E21.091
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/203.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7381657 |
Biased pulse DC reactive sputtering of oxide films |
Jun. 3, 2008 |
| 7345002 |
Replication and transfer of microstructures and nanostructures |
Mar. 18, 2008 |
| 7271081 |
Metal/ZnOx/metal current limiter |
Sep. 18, 2007 |
| 7259110 |
Manufacturing method of display device and semiconductor device |
Aug. 21, 2007 |
| 7115533 |
Semiconductor device manufacturing method |
Oct. 3, 2006 |
| 6789499 |
Apparatus to sputter silicon films |
Sep. 14, 2004 |
| 6566175 |
Method of manufacturing gate insulated field effect transistors |
May. 20, 2003 |
| 6531408 |
Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same |
Mar. 11, 2003 |
| 6429097 |
Method to sputter silicon films |
Aug. 6, 2002 |
| 6365478 |
Solid state electronic device fabrication using crystalline defect control |
Apr. 2, 2002 |
| 6362097 |
Collimated sputtering of semiconductor and other films |
Mar. 26, 2002 |
| 6261877 |
Method of manufacturing gate insulated field effect transistors |
Jul. 17, 2001 |
| 6177302 |
Method of manufacturing a thin film transistor using multiple sputtering chambers |
Jan. 23, 2001 |
| 6057557 |
Semiconductor substrate semiconductor device and liquid crystal display device |
May. 2, 2000 |
| 6022458 |
Method of production of a semiconductor substrate |
Feb. 8, 2000 |
| 5712187 |
Variable temperature semiconductor film deposition |
Jan. 27, 1998 |
| 5602418 |
Nitride based semiconductor device and manufacture thereof |
Feb. 11, 1997 |
| 5554257 |
Method of treating surfaces with atomic or molecular beam |
Sep. 10, 1996 |
| 5525538 |
Method for intrinsically doped III-A and V-A compounds |
Jun. 11, 1996 |
| 5500102 |
Method of forming deposited semiconductor film |
Mar. 19, 1996 |
| 5427055 |
Method for controlling roughness on surface of monocrystal |
Jun. 27, 1995 |
| 5419785 |
Intrinsically doped III-A and V-A compounds having precipitates of V-A element |
May. 30, 1995 |
| 5320984 |
Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere |
Jun. 14, 1994 |
| 5231047 |
High quality photovoltaic semiconductor material and laser ablation method of fabrication same |
Jul. 27, 1993 |
| 5194398 |
Semiconductor film and process for its production |
Mar. 16, 1993 |
| 5173121 |
Apparatus for the deposition and film formation of silicon on substrates |
Dec. 22, 1992 |
| 5075257 |
Aerosol deposition and film formation of silicon |
Dec. 24, 1991 |
| 4883770 |
Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication |
Nov. 28, 1989 |
| 4874438 |
Intermetallic compound semiconductor thin film and method of manufacturing same |
Oct. 17, 1989 |
| 4800173 |
Process for preparing Si or Ge epitaxial film using fluorine oxidant |
Jan. 24, 1989 |
| 4799088 |
High electron mobility single heterojunction semiconductor devices and methods for production thereof |
Jan. 17, 1989 |
| 4698235 |
Siting a film onto a substrate including electron-beam evaporation |
Oct. 6, 1987 |
| 4673475 |
Dual ion beam deposition of dense films |
Jun. 16, 1987 |
| 4637869 |
Dual ion beam deposition of amorphous semiconductor films |
Jan. 20, 1987 |
| 4559091 |
Method for producing hyperabrupt doping profiles in semiconductors |
Dec. 17, 1985 |
| 4542712 |
Apparatus for molecular beam epitaxy |
Sep. 24, 1985 |
| 4528082 |
Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers |
Jul. 9, 1985 |
| 4508609 |
Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets |
Apr. 2, 1985 |
| 4496450 |
Process for the production of a multicomponent thin film |
Jan. 29, 1985 |
| 4477311 |
Process and apparatus for fabricating a semiconductor device |
Oct. 16, 1984 |
| 4441973 |
Method for preparing a thin film amorphous silicon having high reliability |
Apr. 10, 1984 |
| 4402762 |
Method of making highly stable modified amorphous silicon and germanium films |
Sep. 6, 1983 |
| 4353788 |
RF Sputtering for preparing substantially pure amorphous silicon monohydride |
Oct. 12, 1982 |
| 4351856 |
Semiconductor device and method of manufacturing the same |
Sep. 28, 1982 |
| 4238232 |
Metallic modified material of intermetallic compound |
Dec. 9, 1980 |
| 4236122 |
Mesa devices fabricated on channeled substrates |
Nov. 25, 1980 |
| 4228452 |
Silicon device with uniformly thick polysilicon |
Oct. 14, 1980 |
| 4225409 |
Metallic modified material of intermetallic compound and a process for the production of the same |
Sep. 30, 1980 |
| 4218495 |
Schottky barrier type solid-state element |
Aug. 19, 1980 |
| 4213801 |
Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers |
Jul. 22, 1980 |
|
|
|
 |
|
 |
|
| |
Randomly Featured Patents |
|
