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Class Information
Number: 257/E21.09
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo)
Description: This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/20.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.119 Characterized by the substrate (epo) 133
257/E21.133 Epitaxial re-growth of non-monocrystalline semiconductor material, e.g., lateral epitaxy by seeded solidific ation, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline material (epo) 700
257/E21.131 Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (epo) 612
257/E21.114 Using liquid deposition (epo) 49
257/E21.091 Using physical deposition, e.g., vacuum deposition, sputtering (epo) 65
257/E21.101 Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) 497


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
7449391 Methods of forming plurality of capacitor devices Nov. 11, 2008
7446024 Method of forming nanowires with a narrow diameter distribution Nov. 4, 2008
7439165 Method of fabricating tensile strained layers and compressive strain layers for a CMOS device Oct. 21, 2008
7435666 Epitaxial growth method Oct. 14, 2008
7410913 Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO Aug. 12, 2008
7410888 Method for manufacturing strained silicon Aug. 12, 2008
7410864 Trench and a trench capacitor and method for forming the same Aug. 12, 2008
7399716 Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor Jul. 15, 2008
7371665 Method for fabricating shallow trench isolation layer of semiconductor device May. 13, 2008
7364982 Process for preparing a bonding type semiconductor substrate Apr. 29, 2008
7361556 Method of fabricating semiconductor side wall fin Apr. 22, 2008
7358112 Method of growing a semiconductor layer Apr. 15, 2008
7341927 Wafer bonded epitaxial templates for silicon heterostructures Mar. 11, 2008
7338886 Implantation-less approach to fabricating strained semiconductor on isolation wafers Mar. 4, 2008
7329596 Method for tuning epitaxial growth by interfacial doping and structure including same Feb. 12, 2008
7312128 Selective epitaxy process with alternating gas supply Dec. 25, 2007
7309644 System and method of fabrication and application of thin-films with continuously graded or discrete physical property parameters to functionally broadband monolithic microelectronic optoel Dec. 18, 2007
7294562 Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same Nov. 13, 2007
7288423 In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition Oct. 30, 2007
7265417 Method of fabricating semiconductor side wall fin Sep. 4, 2007
7244659 Integrated circuits and methods of forming a field effect transistor Jul. 17, 2007
7241700 Methods for post offset spacer clean for improved selective epitaxy silicon growth Jul. 10, 2007
7202142 Method for producing low defect density strained -Si channel MOSFETS Apr. 10, 2007
7157297 Method for fabrication of semiconductor device Jan. 2, 2007
7020372 Optical devices with engineered nonlinear nanocomposite materials Mar. 28, 2006
6961499 Optical devices with engineered nonlinear nanocomposite materials Nov. 1, 2005
6939604 Doped semiconductor nanocrystals Sep. 6, 2005
6819845 Optical devices with engineered nonlinear nanocomposite materials Nov. 16, 2004
6794265 Methods of forming quantum dots of Group IV semiconductor materials Sep. 21, 2004
6774014 Method of fabricating spherical quantum dots device by combination of gas condensation and epitaxial technique Aug. 10, 2004
6770138 Pattern for monitoring epitaxial layer washout Aug. 3, 2004
6710366 Nanocomposite materials with engineered properties Mar. 23, 2004
6620665 Method for fabricating semiconductor device Sep. 16, 2003
6596555 Forming of quantum dots Jul. 22, 2003
6555221 Method for forming an ultra microparticle-structure Apr. 29, 2003
6531374 Overlay shift correction for the deposition of epitaxial silicon layer and post-epitaxial silicon layers in a semiconductor device Mar. 11, 2003
6524971 Method of deposition of films Feb. 25, 2003
6459712 Semiconductor devices Oct. 1, 2002
6424004 Semiconductor device having quantum dots Jul. 23, 2002
6403976 Semiconductor crystal, fabrication method thereof, and semiconductor device Jun. 11, 2002
6377596 Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices Apr. 23, 2002
6358316 Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure Mar. 19, 2002
6344403 Memory device and method for manufacture Feb. 5, 2002
6257760 Using a superlattice to determine the temperature of a semiconductor fabrication process Jul. 10, 2001
6229197 Epitaxial overgrowth method and devices May. 8, 2001
6204098 Method of formation in a silicon wafer of an insulated well Mar. 20, 2001
6194237 Method for forming quantum dot in semiconductor device and a semiconductor device resulting therefrom Feb. 27, 2001
6130142 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate Oct. 10, 2000
6130143 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate Oct. 10, 2000
6124209 Method for treating a surface of a silicon single crystal and a method for manufacturing a silicon single crystal thin film Sep. 26, 2000

1 2 3 4


 
 
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