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Class Information
Number: 257/E21.09
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo)
Description: This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/20.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/E21.119 |
Characterized by the substrate (epo) |
134 |
| 257/E21.133 |
Epitaxial re-growth of non-monocrystalline semiconductor material, e.g., lateral epitaxy by seeded solidific ation, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline material (epo) |
721 |
| 257/E21.131 |
Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (epo) |
621 |
| 257/E21.114 |
Using liquid deposition (epo) |
51 |
| 257/E21.091 |
Using physical deposition, e.g., vacuum deposition, sputtering (epo) |
67 |
| 257/E21.101 |
Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) |
499 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622398 |
Semiconductor device, semiconductor layer and production method thereof |
Nov. 24, 2009 |
| 7615390 |
Method and apparatus for forming expitaxial layers |
Nov. 10, 2009 |
| 7605012 |
ZnO based compound semiconductor light emitting device and method for manufacturing the same |
Oct. 20, 2009 |
| 7602027 |
Semiconductor component and method of manufacture |
Oct. 13, 2009 |
| 7598102 |
Method for fabricating pixel structure |
Oct. 6, 2009 |
| 7598153 |
Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species |
Oct. 6, 2009 |
| 7598178 |
Carbon precursors for use during silicon epitaxial film formation |
Oct. 6, 2009 |
| 7589002 |
Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method |
Sep. 15, 2009 |
| 7588957 |
CVD process gas flow, pumping and/or boosting |
Sep. 15, 2009 |
| 7585769 |
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE |
Sep. 8, 2009 |
| 7579259 |
Simplified method of producing an epitaxially grown structure |
Aug. 25, 2009 |
| 7575942 |
Epitaxial substrate, semiconductor element, manufacturing method for epitaxial substrate and method for unevenly distributing dislocations in group III nitride crystal |
Aug. 18, 2009 |
| 7572715 |
Selective epitaxy process with alternating gas supply |
Aug. 11, 2009 |
| 7566628 |
Process for making a resistive memory cell with separately patterned electrodes |
Jul. 28, 2009 |
| 7560364 |
Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films |
Jul. 14, 2009 |
| 7560296 |
Process for producing an epitalixal layer of galium nitride |
Jul. 14, 2009 |
| 7560352 |
Selective deposition |
Jul. 14, 2009 |
| 7544525 |
AllnGaP LED having reduced temperature dependence |
Jun. 9, 2009 |
| 7537980 |
Method of manufacturing a stacked semiconductor device |
May. 26, 2009 |
| 7537968 |
Junction diode with reduced reverse current |
May. 26, 2009 |
| 7517765 |
Method for forming germanides and devices obtained thereof |
Apr. 14, 2009 |
| 7514372 |
Epitaxial growth of relaxed silicon germanium layers |
Apr. 7, 2009 |
| 7510957 |
Complimentary lateral III-nitride transistors |
Mar. 31, 2009 |
| 7504324 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
Mar. 17, 2009 |
| 7491628 |
Method for patterning large scale nano-fibrous surfaces using capillography |
Feb. 17, 2009 |
| 7476599 |
Two-phase thermal method for preparation of cadmium sulfide quantum dots |
Jan. 13, 2009 |
| 7473621 |
Producing method for crystalline thin film |
Jan. 6, 2009 |
| 7473623 |
Providing stress uniformity in a semiconductor device |
Jan. 6, 2009 |
| 7449391 |
Methods of forming plurality of capacitor devices |
Nov. 11, 2008 |
| 7446024 |
Method of forming nanowires with a narrow diameter distribution |
Nov. 4, 2008 |
| 7439165 |
Method of fabricating tensile strained layers and compressive strain layers for a CMOS device |
Oct. 21, 2008 |
| 7435666 |
Epitaxial growth method |
Oct. 14, 2008 |
| 7410864 |
Trench and a trench capacitor and method for forming the same |
Aug. 12, 2008 |
| 7410888 |
Method for manufacturing strained silicon |
Aug. 12, 2008 |
| 7410913 |
Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO |
Aug. 12, 2008 |
| 7399716 |
Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor |
Jul. 15, 2008 |
| 7371665 |
Method for fabricating shallow trench isolation layer of semiconductor device |
May. 13, 2008 |
| 7364982 |
Process for preparing a bonding type semiconductor substrate |
Apr. 29, 2008 |
| 7361556 |
Method of fabricating semiconductor side wall fin |
Apr. 22, 2008 |
| 7358112 |
Method of growing a semiconductor layer |
Apr. 15, 2008 |
| 7341927 |
Wafer bonded epitaxial templates for silicon heterostructures |
Mar. 11, 2008 |
| 7338886 |
Implantation-less approach to fabricating strained semiconductor on isolation wafers |
Mar. 4, 2008 |
| 7329596 |
Method for tuning epitaxial growth by interfacial doping and structure including same |
Feb. 12, 2008 |
| 7312128 |
Selective epitaxy process with alternating gas supply |
Dec. 25, 2007 |
| 7309644 |
System and method of fabrication and application of thin-films with continuously graded or discrete physical property parameters to functionally broadband monolithic microelectronic optoel |
Dec. 18, 2007 |
| 7294562 |
Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same |
Nov. 13, 2007 |
| 7288423 |
In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition |
Oct. 30, 2007 |
| 7265417 |
Method of fabricating semiconductor side wall fin |
Sep. 4, 2007 |
| 7244659 |
Integrated circuits and methods of forming a field effect transistor |
Jul. 17, 2007 |
| 7241700 |
Methods for post offset spacer clean for improved selective epitaxy silicon growth |
Jul. 10, 2007 |
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