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Class Information
Number: 257/E21.089
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multistep processes for manufacture of device using quantum interference effect, e.g., electrostatic aharonov-bohm effect (epo)
Description: This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/18Q.


Patents under this class:

Patent Number Title Of Patent Date Issued
7402486 Cylinder-type capacitor and storage device, and method(s) for fabricating the same Jul. 22, 2008
7192841 Method of wafer/substrate bonding Mar. 20, 2007
7173272 Quantum optical CNOT gate Feb. 6, 2007
7138285 Control of contact resistance in quantum well intermixed devices Nov. 21, 2006
5908306 Method for making a semiconductor device exploiting a quantum interferences effect Jun. 1, 1999
5892247 Semiconductor device and a manufacturing method thereof Apr. 6, 1999
5811831 Semiconductor device exploiting a quantum interference effect Sep. 22, 1998
5640022 Quantum effect device Jun. 17, 1997
5557141 Method of doping, semiconductor device, and method of fabricating semiconductor device Sep. 17, 1996
5406094 Quantum interference effect semiconductor device and method of producing the same Apr. 11, 1995
5350709 Method of doping a group III-V compound semiconductor Sep. 27, 1994
5270557 Quantum interference semiconductor device having a quantum point contact and fabrication process thereof Dec. 14, 1993



 
 
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