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Class Information
Number: 257/E21.088
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Joining of semiconductor body for junction formation (epo) > By direct bonding (epo)
Description: This subclass is indented under subclass E21.087. This subclass is substantially the same in scope as ECLA classification H01L21/18B2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7456081 |
In-place bonding of microstructures |
Nov. 25, 2008 |
| 7452745 |
Photodetecting device |
Nov. 18, 2008 |
| 7442623 |
Method for manufacturing bonded substrate and bonded substrate manufactured by the method |
Oct. 28, 2008 |
| 7442633 |
Decoupling capacitor for high frequency noise immunity |
Oct. 28, 2008 |
| 7410885 |
Method of reducing contamination by removing an interlayer dielectric from the substrate edge |
Aug. 12, 2008 |
| 7371662 |
Method for forming a 3D interconnect and resulting structures |
May. 13, 2008 |
| 7368332 |
SOI substrate manufacturing method |
May. 6, 2008 |
| 7282425 |
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS |
Oct. 16, 2007 |
| 7244635 |
Semiconductor device and method of manufacturing the same |
Jul. 17, 2007 |
| 7202140 |
Method to fabricate Ge and Si devices together for performance enhancement |
Apr. 10, 2007 |
| 7183656 |
Bilayer aluminum last metal for interconnects and wirebond pads |
Feb. 27, 2007 |
| 7118989 |
Method of forming vias on a wafer stack using laser ablation |
Oct. 10, 2006 |
| 7041227 |
Method for revealing crystalline defects and/or stress field defects at the molecular adhesion interface of two solid materials |
May. 9, 2006 |
| 6974760 |
Methods for transferring a useful layer of silicon carbide to a receiving substrate |
Dec. 13, 2005 |
| 6946711 |
Semiconductor device |
Sep. 20, 2005 |
| 6946364 |
Integrated circuit having a device wafer with a diffused doped backside layer |
Sep. 20, 2005 |
| 6908027 |
Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process |
Jun. 21, 2005 |
| 6908832 |
In situ plasma wafer bonding method |
Jun. 21, 2005 |
| 6887342 |
Field-assisted fusion bonding |
May. 3, 2005 |
| 6875268 |
Method of improving a surface of a substrate for bonding |
Apr. 5, 2005 |
| 6867495 |
Integrated circuit having a device wafer with a diffused doped backside layer |
Mar. 15, 2005 |
| 6815312 |
Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof |
Nov. 9, 2004 |
| 6787885 |
Low temperature hydrophobic direct wafer bonding |
Sep. 7, 2004 |
| 6780759 |
Method for multi-frequency bonding |
Aug. 24, 2004 |
| 6717212 |
Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure |
Apr. 6, 2004 |
| 6645828 |
In situ plasma wafer bonding method |
Nov. 11, 2003 |
| 6645831 |
Thermally stable crystalline defect-free germanium bonded to silicon and silicon dioxide |
Nov. 11, 2003 |
| 6646304 |
Universal semiconductor wafer for high-voltage semiconductor components |
Nov. 11, 2003 |
| 6610582 |
Field-assisted fusion bonding |
Aug. 26, 2003 |
| 6563133 |
Method of epitaxial-like wafer bonding at low temperature and bonded structure |
May. 13, 2003 |
| 6534382 |
Process for producing semiconductor article |
Mar. 18, 2003 |
| 6475926 |
Substrate for high frequency integrated circuits |
Nov. 5, 2002 |
| 6465809 |
Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof |
Oct. 15, 2002 |
| 6455398 |
Silicon on III-V semiconductor bonding for monolithic optoelectronic integration |
Sep. 24, 2002 |
| 6423613 |
Low temperature silicon wafer bond process with bulk material bond strength |
Jul. 23, 2002 |
| 6362075 |
Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide |
Mar. 26, 2002 |
| 6346435 |
Laminated substrate fabricated from semiconductor wafers bonded to each other without contact between insulating layer and semiconductor layer and process of fabrication thereof |
Feb. 12, 2002 |
| 6333208 |
Robust manufacturing method for making a III-V compound semiconductor device by misaligned wafer bonding |
Dec. 25, 2001 |
| 6281032 |
Manufacturing method for nitride III-V compound semiconductor device using bonding |
Aug. 28, 2001 |
| 6274892 |
Devices formable by low temperature direct bonding |
Aug. 14, 2001 |
| 6242817 |
Fabricated wafer for integration in a wafer structure |
Jun. 5, 2001 |
| 6194290 |
Methods for making semiconductor devices by low temperature direct bonding |
Feb. 27, 2001 |
| 6191006 |
Method of bonding a III-V group compound semiconductor layer on a silicon substrate |
Feb. 20, 2001 |
| 6187653 |
Method for attractive bonding of two crystalline substrates |
Feb. 13, 2001 |
| 6183857 |
Substrate for high frequency integrated circuits |
Feb. 6, 2001 |
| 6180496 |
In situ plasma wafer bonding method |
Jan. 30, 2001 |
| 6168978 |
Method for producing a power semiconductor component on a two-sided substrate that blocks on both sides of the substrate |
Jan. 2, 2001 |
| 6153495 |
Advanced methods for making semiconductor devices by low temperature direct bonding |
Nov. 28, 2000 |
| 6136667 |
Method for bonding two crystalline substrates together |
Oct. 24, 2000 |
| 6124612 |
FET with source-substrate connection and method for producing the FET |
Sep. 26, 2000 |
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