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Class Information
Number: 257/E21.087
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Joining of semiconductor body for junction formation (epo)
Description: This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/18B.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.088 By direct bonding (epo) 132


Patents under this class:

Patent Number Title Of Patent Date Issued
7276431 Method of fabricating isolated semiconductor devices in epi-less substrate Oct. 2, 2007
7037804 Wafer bonding using a flexible bladder press for three dimensional (3D) vertical stack integration May. 2, 2006
6975016 Wafer bonding using a flexible bladder press and thinned wafers for three-dimensional (3D) wafer-to-wafer vertical stack integration, and application thereof Dec. 13, 2005
6756285 Multilayer structure with controlled internal stresses and making same Jun. 29, 2004
6316332 Method for joining wafers at a low temperature and low stress Nov. 13, 2001
6261928 Producing microstructures or nanostructures on a support Jul. 17, 2001
5872388 Semiconductor device and method for fabricating the same Feb. 16, 1999
5726089 Semiconductor device and method for fabricating the same Mar. 10, 1998
4075038 Deep diode devices and method and apparatus Feb. 21, 1978
4031607 Minority carrier isolation barriers for semiconductor devices Jun. 28, 1977
4024566 Deep diode device May. 17, 1977
3988762 Minority carrier isolation barriers for semiconductor devices Oct. 26, 1976
3988766 Multiple P-N junction formation with an alloy droplet Oct. 26, 1976
3988771 Spatial control of lifetime in semiconductor device Oct. 26, 1976
3977910 Deep finger diodes Aug. 31, 1976
3956023 Process for making a deep power diode by thermal migration of dopant May. 11, 1976
3956026 Making a deep diode varactor by thermal migration May. 11, 1976
3956024 Process for making a semiconductor varistor embodying a lamellar structure May. 11, 1976



 
 
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