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Class Information
Number: 257/E21.086
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Intermixing or interdiffusion or disordering of group iii-v heterostructures, e.g., iild (epo)
Description: This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/18A.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8603854 Preparation method for resistance switchable conductive filler for ReRAM Dec. 10, 2013
8592823 Compound semiconductor device and method for manufacturing the same Nov. 26, 2013
8476646 Light emitting device and light emitting device package Jul. 2, 2013
8252623 Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof Aug. 28, 2012
8227898 Ohmic contact on a p-type principal surface tilting with respect to the c-plane Jul. 24, 2012
8133806 Systems and methods for forming semiconductor materials by atomic layer deposition Mar. 13, 2012
8124441 Programmable resistive memory cell with filament placement structure Feb. 28, 2012
8063413 Tensile strained GE for electronic and optoelectronic applications Nov. 22, 2011
7955957 Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device Jun. 7, 2011
7936044 Non-volatile memory devices and methods of fabricating the same May. 3, 2011
7875522 Silicon compatible integrated light communicator Jan. 25, 2011
7863164 Method of growing GaN using CVD and HVPE Jan. 4, 2011
7855096 Method for manufacturing semiconductor device Dec. 21, 2010
7820508 Semiconductor device having capacitor and method of fabricating the same Oct. 26, 2010
7736922 Semiconductor laser element and method of fabrication thereof Jun. 15, 2010
7671383 Semiconductor device and method of producing the same Mar. 2, 2010
7638359 Method for making a self-converged void and bottom electrode for memory cell Dec. 29, 2009
7601573 Method for producing nitride semiconductor device Oct. 13, 2009
7544976 Semiconductor heterostructure Jun. 9, 2009
7473576 Method for making a self-converged void and bottom electrode for memory cell Jan. 6, 2009
7429534 Etching a nitride-based heterostructure Sep. 30, 2008
7368332 SOI substrate manufacturing method May. 6, 2008
7238589 In-place bonding of microstructures Jul. 3, 2007
7151061 Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof Dec. 19, 2006
6984538 Method for quantum well intermixing using pre-annealing enhanced defects diffusion Jan. 10, 2006
6936526 Method of disordering quantum well heterostructures Aug. 30, 2005
6878562 Method for shifting the bandgap energy of a quantum well layer Apr. 12, 2005
6797533 Quantum well intermixing in InGaAsP structures induced by low temperature grown InP Sep. 28, 2004
6719884 Method of manufacturing optical devices and related improvements Apr. 13, 2004
6617188 Quantum well intermixing Sep. 9, 2003
6611007 Method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (InGaAsP) quantum well structures Aug. 26, 2003
6027989 Bandgap tuning of semiconductor well structure Feb. 22, 2000
5843802 Semiconductor laser formed by layer intermixing Dec. 1, 1998
5708674 Semiconductor laser or array formed by layer intermixing Jan. 13, 1998
5703894 Radiation-emitting semiconductor diode and method of manufacturing such a diode Dec. 30, 1997
5395793 Method of bandgap tuning of semiconductor quantum well structures Mar. 7, 1995
5381027 Semiconductor device having a heterojunction and a two dimensional gas as an active layer Jan. 10, 1995
5376583 Method for producing P-type impurity induced layer disordering Dec. 27, 1994
5346856 Method of making a selective compositional disordering of a GaAs based heterostructure by the in-diffusion of Au through a single crystal, epitaxially grown Ge film Sep. 13, 1994
5281543 Fabrication method for quantum devices in compound semiconductor layers Jan. 25, 1994
5258631 Semiconductor device having a two-dimensional electron gas as an active layer Nov. 2, 1993
5238868 Bandgap tuning of semiconductor quantum well structures Aug. 24, 1993
5232867 Method for the making of optoelectronic semiconductor devices Aug. 3, 1993
5182229 Method for diffusing an n type impurity from a solid phase source into a III-V compound semiconductor Jan. 26, 1993
5170226 Fabrication of quantum devices in compound semiconductor layers and resulting structures Dec. 8, 1992
5108948 Method of producing a semiconductor device having a disordered superlattice using an epitaxial solid diffusion source Apr. 28, 1992
5023199 Method of diffusing Zn into compound semiconductor Jun. 11, 1991
5013684 Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth May. 7, 1991
RE33274 Selective disordering of well structures by laser annealing Jul. 24, 1990
4871690 Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects Oct. 3, 1989

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