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Class Information
Number: 257/E21.085
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo)
Description: This subclass is indented under subclass E21.04. This subclass is substantially the same in scope as ECLA classification H01L21/18.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.086 Intermixing or interdiffusion or disordering of group iii-v heterostructures, e.g., iild (epo) 41
257/E21.087 Joining of semiconductor body for junction formation (epo) 18
257/E21.089 Multistep processes for manufacture of device using quantum interference effect, e.g., electrostatic aharonov-bohm effect (epo) 12
257/E21.09 Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) 153
257/E21.135 Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) 91
257/E21.154 Alloying of impurity material, e.g., doping material, electrode material, with a semiconductor body (epo) 108
257/E21.158 Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) 243
257/E21.211 Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) 131
257/E21.328 Radiation treatment (epo) 23
257/E21.35 Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) 16
257/E21.394 Multi-step process for the manufacture of unipolar device (epo) 3


Patents under this class:

Patent Number Title Of Patent Date Issued
7456445 Group III nitride semiconductor light emitting device Nov. 25, 2008
7364929 Nitride semiconductor based light-emitting device and manufacturing method thereof Apr. 29, 2008
7288430 Method of fabricating heteroepitaxial microstructures Oct. 30, 2007
7105370 Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor Sep. 12, 2006
6531379 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe Mar. 11, 2003
6251755 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe Jun. 26, 2001
6010950 Method of manufacturing semiconductor bonded substrate Jan. 4, 2000
4667076 Method and apparatus for microwave heat-treatment of a semiconductor water May. 19, 1987
4593168 Method and apparatus for the heat-treatment of a plate-like member Jun. 3, 1986



 
 
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