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Class Information
Number: 257/E21.081
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising cuprous oxide (cu 2 o) or cuprous iodide (cui) (epo) > Preparation of substrate, preliminary treatment oxidation of substrate, reduction treatment (epo) > Reduction of copper oxide, treatment of oxide layer (epo)
Description: This subclass is indented under subclass E21.079. This subclass is substantially the same in scope as ECLA classification H01L21/16B4.










Patents under this class:

Patent Number Title Of Patent Date Issued
8637917 Semiconductor devices including vertical channel pattern Jan. 28, 2014
8349731 Methods for forming copper diffusion barriers for semiconductor interconnect structures Jan. 8, 2013
8198104 Method of manufacturing a semiconductor device Jun. 12, 2012
7910451 Simultaneous buried strap and buried contact via formation for SOI deep trench capacitor Mar. 22, 2011
7807515 Oxide semiconductor, thin-film transistor and method for producing the same Oct. 5, 2010
7727891 Method of manufacturing a semiconductor device using a wet process Jun. 1, 2010
7405153 Method for direct electroplating of copper onto a non-copper plateable layer Jul. 29, 2008
7294883 Nonvolatile memory cells with buried channel transistors Nov. 13, 2007
7229911 Adhesion improvement for low k dielectrics to conductive materials Jun. 12, 2007











 
 
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