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Class Information
Number: 257/E21.08
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising cuprous oxide (cu 2 o) or cuprous iodide (cui) (epo) > Preparation of substrate, preliminary treatment oxidation of substrate, reduction treatment (epo) > Preliminary treatment of foundation plate (epo)
Description: This subclass is indented under subclass E21.079. This subclass is substantially the same in scope as ECLA classification H01L21/16B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8293600 Thermally stabilized electrode structure Oct. 23, 2012
7824955 Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices Nov. 2, 2010
7371617 Method for fabricating semiconductor package with heat sink May. 13, 2008
7190016 Capacitor structure Mar. 13, 2007
7164210 Semiconductor package with heat sink and method for fabricating same Jan. 16, 2007











 
 
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