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Class Information
Number: 257/E21.078
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising cuprous oxide (cu 2 o) or cuprous iodide (cui) (epo)
Description: This subclass is indented under subclass E21.04. This subclass is substantially the same in scope as ECLA classification H01L21/16.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.079 Preparation of substrate, preliminary treatment oxidation of substrate, reduction treatment (epo) 24
257/E21.084 Treatment of complete device, e.g., electroforming, heat treating (epo) 12


Patents under this class:

Patent Number Title Of Patent Date Issued
8637861 Transistor having oxide semiconductor with electrode facing its side surface Jan. 28, 2014
8546779 Resistance change memory and manufacturing method thereof Oct. 1, 2013
8524528 Methods for forming resistive-switching metal oxides for nonvolatile memory elements Sep. 3, 2013
8471233 Semiconductor memory and method of manufacturing the same Jun. 25, 2013
8409915 Methods of forming memory cells Apr. 2, 2013
8367463 Methods for forming resistive-switching metal oxides for nonvolatile memory elements Feb. 5, 2013
8232174 Method for controlled formation of the resistive switching material in a resistive switching device and device obtained thereof Jul. 31, 2012
8227872 Heterojunction diode, method of manufacturing the same, and electronic device including the heterojunction diode Jul. 24, 2012
8203144 Semiconductor device having a metal oxide channel Jun. 19, 2012
8148711 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element Apr. 3, 2012
8102003 Resistance memory element, method of manufacturing resistance memory element and semiconductor memory device Jan. 24, 2012
7977153 Methods for forming resistive-switching metal oxides for nonvolatile memory elements Jul. 12, 2011
7972899 Method for fabricating copper-containing ternary and quaternary chalcogenide thin films Jul. 5, 2011
7863087 Methods for forming resistive-switching metal oxides for nonvolatile memory elements Jan. 4, 2011
7851323 Phase change material with filament electrode Dec. 14, 2010
7833825 Solution-based deposition process for metal chalcogenides Nov. 16, 2010
7705395 Flash memory cell and method of manufacturing the same and programming/erasing reading method of flash memory cell Apr. 27, 2010
7670887 Field-effect transistors with weakly coupled layered inorganic semiconductors Mar. 2, 2010
7544536 Metal oxide dispersion for dye-sensitized solar cells, photoactive electrode and dye-sensitized solar cell Jun. 9, 2009
7169692 Method and apparatus to eliminate galvanic corrosion on copper doped aluminum bond pads on integrated circuits Jan. 30, 2007
6258702 Method for the formation of a cuprous oxide film and process for the production of a semiconductor device using said method Jul. 10, 2001











 
 
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