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Class Information
Number: 257/E21.075
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising selenium (se) or tellurium (te) (epo) > Application of electrode to exposed surface of se or te after se or te has been applied to foundation plate (epo)
Description: This subclass is indented under subclass E21.068. This subclass is substantially the same in scope as ECLA classification H01L21/12.










Patents under this class:

Patent Number Title Of Patent Date Issued
8563434 Semiconductor device contacts Oct. 22, 2013
8445318 Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same May. 21, 2013
8198619 Phase change memory cell structure Jun. 12, 2012
8093094 Blocking contacts for N-type cadmium zinc telluride Jan. 10, 2012
7985693 Method of producing phase change memory device Jul. 26, 2011
7923342 Nonvolatile memory element and production method thereof and storage memory arrangement Apr. 12, 2011
7901980 Self-aligned in-contact phase change memory device Mar. 8, 2011
7892935 Semiconductor process Feb. 22, 2011
7803657 Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same Sep. 28, 2010
7598113 Phase change memory device and fabricating method therefor Oct. 6, 2009
7547913 Phase-change memory device using Sb-Se metal alloy and method of fabricating the same Jun. 16, 2009
7368314 Method for fabricating a resistive memory May. 6, 2008











 
 
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