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Class Information
Number: 257/E21.07
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising selenium (se) or tellurium (te) (epo) > Preliminary treatment of se or te, its application to substrate, or the subsequent treatment of combination (epo)
Description: This subclass is indented under subclass E21.068. This subclass is substantially the same in scope as ECLA classification H01L21/10.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.071 Application of se or te to substrate or foundation plate (epo) 1
257/E21.072 Conversion of se or te to conductive state (epo) 0
257/E21.074 Provision of discrete insulating layer, i.e., specified barrier layer material (epo) 0
257/E21.073 Treatment of surface of se or te layer after having been made conductive (epo) 1


Patents under this class:

Patent Number Title Of Patent Date Issued
7374174 Small electrode for resistance variable devices May. 20, 2008
7229918 Nitrogen rich barrier layers and methods of fabrication thereof Jun. 12, 2007
7163837 Method of forming a resistance variable memory element Jan. 16, 2007



 
 
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