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Class Information
Number: 257/E21.067
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises silicon carbide (epo) > Device controllable only by variation of electric current supplied or electric potential applied to one or more of the electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (epo)
Description: This subclass is indented under subclass E21.065. This subclass is substantially the same in scope as ECLA classification H01L21/04H20C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8592882 Magnetic random access memory and manufacturing method thereof Nov. 26, 2013
8531019 Heat dissipation methods and structures for semiconductor device Sep. 10, 2013
8470666 Methods of making random access memory devices, transistors, and memory cells Jun. 25, 2013
8441017 Schottky barrier diode and method for making the same May. 14, 2013
8232158 Compensated isolated p-well DENMOS devices Jul. 31, 2012
8198715 MEMS device and process Jun. 12, 2012
8163637 Forming impurity regions in silicon carbide devices Apr. 24, 2012
8124480 Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations Feb. 28, 2012
7943420 Single mask adder phase change memory element May. 17, 2011
7816243 Semiconductor device and method of fabricating the same Oct. 19, 2010
7811874 Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device Oct. 12, 2010
7635899 Structure and method to form improved isolation in a semiconductor device Dec. 22, 2009
7468549 Method for producing a package for an electronic circuit and a substrate for a package Dec. 23, 2008
6998322 Methods of fabricating high voltage, high temperature capacitor and interconnection structures Feb. 14, 2006
6972436 High voltage, high temperature capacitor and interconnection structures Dec. 6, 2005
6949401 Semiconductor component and method for producing the same Sep. 27, 2005
6936850 Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material Aug. 30, 2005
6897133 Method for producing a schottky diode in silicon carbide May. 24, 2005
6844251 Method of forming a semiconductor device with a junction termination layer Jan. 18, 2005
6767783 Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation Jul. 27, 2004
6727525 Diode comprising a metal semiconductor contact and a method for the production thereof Apr. 27, 2004
6703294 Method for producing a region doped with boron in a SiC-layer Mar. 9, 2004
6703276 Passivated silicon carbide devices with low leakage current and method of fabricating Mar. 9, 2004
6577386 Method and apparatus for activating semiconductor impurities Jun. 10, 2003
6562706 Structure and manufacturing method of SiC dual metal trench Schottky diode May. 13, 2003
6528373 Layered dielectric on silicon carbide semiconductor structures Mar. 4, 2003
6501145 Semiconductor component and method for producing the same Dec. 31, 2002
6437371 Layered dielectric on silicon carbide semiconductor structures Aug. 20, 2002
6388272 W/WC/TAC ohmic and rectifying contacts on SiC May. 14, 2002
6373076 Passivated silicon carbide devices with low leakage current and method of fabricating Apr. 16, 2002
6365494 Method for producing an ohmic contact Apr. 2, 2002
6274889 Method for forming ohmic electrode, and semiconductor device Aug. 14, 2001
6255201 Method and device for activating semiconductor impurities Jul. 3, 2001
6246076 Layered dielectric on silicon carbide semiconductor structures Jun. 12, 2001
6150246 Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC Nov. 21, 2000
6110813 Method for forming an ohmic electrode Aug. 29, 2000
6104043 Schottky diode of SiC and a method for production thereof Aug. 15, 2000
6100111 Method for fabricating a silicon carbide device Aug. 8, 2000
6083814 Method for producing a pn-junction for a semiconductor device of SiC Jul. 4, 2000
6043513 Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact Mar. 28, 2000
6040237 Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge Mar. 21, 2000
6005261 Semiconductor device with a junction termination and a method for production thereof Dec. 21, 1999
6002159 SiC semiconductor device comprising a pn junction with a voltage absorbing edge Dec. 14, 1999
5929523 Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC Jul. 27, 1999
5914500 Junction termination for SiC Schottky diode Jun. 22, 1999
5914499 High voltage silicon carbide semiconductor device with bended edge Jun. 22, 1999
5902117 PN-diode of SiC and a method for production thereof May. 11, 1999
5895260 Method of fabricating semiconductor devices and the devices Apr. 20, 1999
5877077 Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact Mar. 2, 1999
5831287 Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC Nov. 3, 1998

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