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Class Information
Number: 257/E21.066
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises silicon carbide (epo) > Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal device (epo)
Description: This subclass is indented under subclass E21.065. This subclass is substantially the same in scope as ECLA classification H01L21/04H20B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7338869 |
Semiconductor device and its manufacturing method |
Mar. 4, 2008 |
| 7074643 |
Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
Jul. 11, 2006 |
| 7067361 |
Methods of fabricating silicon carbide metal-semiconductor field effect transistors |
Jun. 27, 2006 |
| 7045879 |
Silicon carbide semiconductor device having enhanced carrier mobility |
May. 16, 2006 |
| 7029969 |
Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angle |
Apr. 18, 2006 |
| 7005678 |
Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same |
Feb. 28, 2006 |
| 7005333 |
Transistor with silicon and carbon layer in the channel region |
Feb. 28, 2006 |
| 6998322 |
Methods of fabricating high voltage, high temperature capacitor and interconnection structures |
Feb. 14, 2006 |
| 6995396 |
Semiconductor substrate, semiconductor device and method for fabricating the same |
Feb. 7, 2006 |
| 6995397 |
Semiconductor device |
Feb. 7, 2006 |
| 6982440 |
Silicon carbide semiconductor devices with a regrown contact layer |
Jan. 3, 2006 |
| 6979863 |
Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
Dec. 27, 2005 |
| 6974751 |
Semiconductor device and method for producing the same |
Dec. 13, 2005 |
| 6972436 |
High voltage, high temperature capacitor and interconnection structures |
Dec. 6, 2005 |
| 6956239 |
Transistors having buried p-type layers beneath the source region |
Oct. 18, 2005 |
| 6940110 |
SiC-MISFET and method for fabricating the same |
Sep. 6, 2005 |
| 6903373 |
SiC MOSFET for use as a power switch and a method of manufacturing the same |
Jun. 7, 2005 |
| 6893932 |
Heterojunction bipolar transistor containing at least one silicon carbide layer |
May. 17, 2005 |
| 6870204 |
Heterojunction bipolar transistor containing at least one silicon carbide layer |
Mar. 22, 2005 |
| 6864507 |
MISFET |
Mar. 8, 2005 |
| 6855981 |
Silicon carbide power device having protective diode |
Feb. 15, 2005 |
| 6853006 |
Silicon carbide semiconductor device |
Feb. 8, 2005 |
| 6847091 |
Vertical semiconductor component having a reduced electrical surface field |
Jan. 25, 2005 |
| 6844227 |
Semiconductor devices and method for manufacturing the same |
Jan. 18, 2005 |
| 6841436 |
Method of fabricating SiC semiconductor device |
Jan. 11, 2005 |
| 6833562 |
Silicon carbide semiconductor device and its manufacturing method |
Dec. 21, 2004 |
| 6815304 |
Silicon carbide bipolar junction transistor with overgrown base region |
Nov. 9, 2004 |
| 6815299 |
Method for manufacturing silicon carbide device using water rich anneal |
Nov. 9, 2004 |
| 6812102 |
Semiconductor device manufacturing method |
Nov. 2, 2004 |
| 6770912 |
Semiconductor device and method for producing the same |
Aug. 3, 2004 |
| 6767783 |
Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation |
Jul. 27, 2004 |
| 6764907 |
Method of fabricating self-aligned silicon carbide semiconductor devices |
Jul. 20, 2004 |
| 6759684 |
SiC semiconductor device |
Jul. 6, 2004 |
| 6737677 |
Wide bandgap semiconductor device and method for manufacturing the same |
May. 18, 2004 |
| 6727128 |
Method of preparing polysilicon FET built on silicon carbide diode substrate |
Apr. 27, 2004 |
| 6686616 |
Silicon carbide metal-semiconductor field effect transistors |
Feb. 3, 2004 |
| 6670693 |
Laser synthesized wide-bandgap semiconductor electronic devices and circuits |
Dec. 30, 2003 |
| 6653659 |
Silicon carbide inversion channel mosfets |
Nov. 25, 2003 |
| 6639273 |
Silicon carbide n channel MOS semiconductor device and method for manufacturing the same |
Oct. 28, 2003 |
| 6620697 |
Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same |
Sep. 16, 2003 |
| 6617653 |
MISFET |
Sep. 9, 2003 |
| 6593594 |
Silicon carbide n-channel power LMOSFET |
Jul. 15, 2003 |
| 6580125 |
Semiconductor device and method for fabricating the same |
Jun. 17, 2003 |
| 6576929 |
Silicon carbide semiconductor device and manufacturing method |
Jun. 10, 2003 |
| 6573534 |
Silicon carbide semiconductor device |
Jun. 3, 2003 |
| 6552363 |
Polysilicon FET built on silicon carbide diode substrate |
Apr. 22, 2003 |
| 6528373 |
Layered dielectric on silicon carbide semiconductor structures |
Mar. 4, 2003 |
| 6504184 |
Superior silicon carbide integrated circuits and method of fabricating |
Jan. 7, 2003 |
| 6504176 |
Field effect transistor and method of manufacturing the same |
Jan. 7, 2003 |
| 6482704 |
Method of manufacturing silicon carbide semiconductor device having oxide film formed thereon with low on-resistances |
Nov. 19, 2002 |
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