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Class Information
Number: 257/E21.066
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises silicon carbide (epo) > Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal device (epo)
Description: This subclass is indented under subclass E21.065. This subclass is substantially the same in scope as ECLA classification H01L21/04H20B.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8574987 Integrating formation of a replacement gate transistor and a non-volatile memory cell using an interlayer dielectric Nov. 5, 2013
8519452 Semiconductor device with junction field-effect transistor and manufacturing method of the same Aug. 27, 2013
8507345 Semiconductor device and manufacturing method thereof Aug. 13, 2013
8461632 SiC semiconductor device and method of manufacturing the same Jun. 11, 2013
8441036 Semiconductor device and method of manufacturing the same May. 14, 2013
8431974 Silicon carbide semiconductor device Apr. 30, 2013
8288849 Method for attaching wide bus memory and serial memory to a processor within a chip scale package footprint Oct. 16, 2012
8203151 Semiconductor device and method for fabricating the same Jun. 19, 2012
8198675 Silicon carbide semiconductor device and method of manufacturing the same Jun. 12, 2012
8198715 MEMS device and process Jun. 12, 2012
8101963 Semiconductor light emitting element and method for manufacturing same Jan. 24, 2012
8067776 Method of manufacturing semiconductor device and semiconductor device manufactured thereof Nov. 29, 2011
8017504 Transistor having a high-k metal gate stack and a compressively stressed channel Sep. 13, 2011
7892923 Power field effect transistor and manufacturing method thereof Feb. 22, 2011
7851274 Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor Dec. 14, 2010
7713805 Method of manufacturing silicon carbide semiconductor device May. 11, 2010
7605017 Method of manufacturing a semiconductor device and products made thereby Oct. 20, 2009
7598134 Memory device forming methods Oct. 6, 2009
7588961 Semiconductor device and manufacturing method thereof Sep. 15, 2009
7528040 Methods of fabricating silicon carbide devices having smooth channels May. 5, 2009
7524724 Method of forming titanium nitride layer and method of fabricating capacitor using the same Apr. 28, 2009
7482218 Low-capacitance input/output and electrostatic discharge circuit for protecting an integrated circuit from electrostatic discharge Jan. 27, 2009
7476590 Method of manufacturing semiconductor device Jan. 13, 2009
7338869 Semiconductor device and its manufacturing method Mar. 4, 2008
7074643 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same Jul. 11, 2006
7067361 Methods of fabricating silicon carbide metal-semiconductor field effect transistors Jun. 27, 2006
7045879 Silicon carbide semiconductor device having enhanced carrier mobility May. 16, 2006
7029969 Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angle Apr. 18, 2006
7005678 Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same Feb. 28, 2006
7005333 Transistor with silicon and carbon layer in the channel region Feb. 28, 2006
6998322 Methods of fabricating high voltage, high temperature capacitor and interconnection structures Feb. 14, 2006
6995396 Semiconductor substrate, semiconductor device and method for fabricating the same Feb. 7, 2006
6995397 Semiconductor device Feb. 7, 2006
6982440 Silicon carbide semiconductor devices with a regrown contact layer Jan. 3, 2006
6979863 Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same Dec. 27, 2005
6974751 Semiconductor device and method for producing the same Dec. 13, 2005
6972436 High voltage, high temperature capacitor and interconnection structures Dec. 6, 2005
6956239 Transistors having buried p-type layers beneath the source region Oct. 18, 2005
6940110 SiC-MISFET and method for fabricating the same Sep. 6, 2005
6903373 SiC MOSFET for use as a power switch and a method of manufacturing the same Jun. 7, 2005
6893932 Heterojunction bipolar transistor containing at least one silicon carbide layer May. 17, 2005
6870204 Heterojunction bipolar transistor containing at least one silicon carbide layer Mar. 22, 2005
6864507 MISFET Mar. 8, 2005
6855981 Silicon carbide power device having protective diode Feb. 15, 2005
6853006 Silicon carbide semiconductor device Feb. 8, 2005
6847091 Vertical semiconductor component having a reduced electrical surface field Jan. 25, 2005
6844227 Semiconductor devices and method for manufacturing the same Jan. 18, 2005
6841436 Method of fabricating SiC semiconductor device Jan. 11, 2005
6833562 Silicon carbide semiconductor device and its manufacturing method Dec. 21, 2004
6815304 Silicon carbide bipolar junction transistor with overgrown base region Nov. 9, 2004

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