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Class Information
Number: 257/E21.065
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises silicon carbide (epo)
Description: This subclass is indented under subclass E21.054. This subclass is substantially the same in scope as ECLA classification H01L21/04H20.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.066 Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal device (epo) 222
257/E21.067 Device controllable only by variation of electric current supplied or electric potential applied to one or more of the electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (epo) 68


Patents under this class:

Patent Number Title Of Patent Date Issued
8703566 Transistors comprising a SiC-containing channel Apr. 22, 2014
8563442 Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal S Oct. 22, 2013
8536582 Stable power devices on low-angle off-cut silicon carbide crystals Sep. 17, 2013
8519452 Semiconductor device with junction field-effect transistor and manufacturing method of the same Aug. 27, 2013
8470698 Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystal Jun. 25, 2013
8450750 Silicon carbide semiconductor device and method of manufacturing thereof May. 28, 2013
8415241 Method of manufacturing silicon carbide semiconductor device Apr. 9, 2013
8404536 Method for fabricating stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors Mar. 26, 2013
8394711 Systems and methods for co-doping wide band gap materials Mar. 12, 2013
8367536 Method for manufacturing silicon carbide semiconductor device Feb. 5, 2013
8278666 Method and apparatus for growing high purity 2H-silicon carbide Oct. 2, 2012
8212261 SiC semiconductor device with BPSG insulation film Jul. 3, 2012
8203151 Semiconductor device and method for fabricating the same Jun. 19, 2012
8183573 Process for forming an interface between silicon carbide and silicon oxide with low density of states May. 22, 2012
8143616 Making a structure Mar. 27, 2012
8124510 Method of manufacturing a silicon carbide semiconductor device Feb. 28, 2012
8067776 Method of manufacturing semiconductor device and semiconductor device manufactured thereof Nov. 29, 2011
8053784 Silicon carbide semiconductor device and method for manufacturing the same Nov. 8, 2011
7985610 Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell Jul. 26, 2011
7981709 Semiconductor device and method for fabricating the same Jul. 19, 2011
7951632 Optical device and method of making May. 31, 2011
7928421 Phase change memory cell with vacuum spacer Apr. 19, 2011
7923320 Methods of fabricating vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors Apr. 12, 2011
7915705 SiC semiconductor device having outer periphery structure Mar. 29, 2011
7888256 Process for forming an interface between silicon carbide and silicon oxide with low density of states Feb. 15, 2011
7879705 Semiconductor devices and manufacturing method thereof Feb. 1, 2011
7825417 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers Nov. 2, 2010
7820534 Method of manufacturing silicon carbide semiconductor device Oct. 26, 2010
7781312 Silicon carbide devices and method of making Aug. 24, 2010
7781242 Method of forming vertical structure light emitting diode with heat exhaustion structure Aug. 24, 2010
7763529 Method of fabricating silicon carbide (SiC) layer Jul. 27, 2010
7713805 Method of manufacturing silicon carbide semiconductor device May. 11, 2010
7675068 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices Mar. 9, 2010
7622741 Semiconductor device and method for manufacturing same Nov. 24, 2009
7488984 Doping of SiC structures and methods associated with same Feb. 10, 2009
7482068 Lightly doped silicon carbide wafer and use thereof in high power devices Jan. 27, 2009
7479658 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers Jan. 20, 2009
7439594 Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors Oct. 21, 2008
7411218 Method and device with durable contact on silicon carbide Aug. 12, 2008
7285465 Method of manufacturing a SiC vertical MOSFET Oct. 23, 2007
7247513 Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide Jul. 24, 2007
7118973 Method of forming a transistor with a channel region in a layer of composite material Oct. 10, 2006
6136727 Method for forming thermal oxide film of silicon carbide semiconductor device Oct. 24, 2000
6034001 Method for etching of silicon carbide semiconductor using selective etching of different conductivity types Mar. 7, 2000
5378901 Heterojunction bipolar transistor and method for producing the same Jan. 3, 1995











 
 
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