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Class Information
Number: 257/E21.064
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Making electrode (epo) > Schottky electrode (epo)
Description: This subclass is indented under subclass E21.061. This subclass is substantially the same in scope as ECLA classification H01L21/04H10C.










Patents under this class:

Patent Number Title Of Patent Date Issued
8685848 Manufacturing method of silicon carbide semiconductor device Apr. 1, 2014
8513122 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Aug. 20, 2013
8476154 Method of making a charge trapping non-volatile semiconductor memory device Jul. 2, 2013
8450196 Production of an integrated circuit including electrical contact on SiC May. 28, 2013
8404525 Semiconductor device, manufacturing method of semiconductor device, and RFID tag Mar. 26, 2013
8377811 Method for manufacturing silicon carbide semiconductor device Feb. 19, 2013
8324704 Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same Dec. 4, 2012
8188520 Field effect transistor and method for fabricating the same May. 29, 2012
7977210 Semiconductor substrate and semiconductor device Jul. 12, 2011
7964486 Field effect transistor and method for fabricating the same Jun. 21, 2011
7777292 Semiconductor device Aug. 17, 2010
7667273 Semiconductor device and method for manufacturing the same Feb. 23, 2010
7645691 Method for forming zener zap diodes and ohmic contacts in the same integrated circuit Jan. 12, 2010
7622752 Schottky diode with a vertical barrier Nov. 24, 2009
7488673 Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof Feb. 10, 2009
7326974 Sensor for measuring a gas concentration or ion concentration Feb. 5, 2008
7268027 Method of manufacturing photoreceiver Sep. 11, 2007
7135420 Semiconductor device and manufacturing method thereof Nov. 14, 2006
6936850 Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material Aug. 30, 2005
6905916 Method for processing a surface of an SiC semiconductor layer and Schottky contact Jun. 14, 2005
6784114 Monatomic layer passivation of semiconductor surfaces Aug. 31, 2004
6703276 Passivated silicon carbide devices with low leakage current and method of fabricating Mar. 9, 2004
6562706 Structure and manufacturing method of SiC dual metal trench Schottky diode May. 13, 2003
6544674 Stable electrical contact for silicon carbide devices Apr. 8, 2003
6410460 Technology for thermodynamically stable contacts for binary wide band gap semiconductors Jun. 25, 2002
6388272 W/WC/TAC ohmic and rectifying contacts on SiC May. 14, 2002
6373076 Passivated silicon carbide devices with low leakage current and method of fabricating Apr. 16, 2002
6274889 Method for forming ohmic electrode, and semiconductor device Aug. 14, 2001
6273950 SiC device and method for manufacturing the same Aug. 14, 2001
6214107 Method for manufacturing a SiC device Apr. 10, 2001
6150246 Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC Nov. 21, 2000
6139624 Process for producing an electrical contact on a SIC surface Oct. 31, 2000
6110813 Method for forming an ohmic electrode Aug. 29, 2000
6002148 Silicon carbide transistor and method Dec. 14, 1999
5929523 Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC Jul. 27, 1999
5885860 Silicon carbide transistor and method Mar. 23, 1999
5471072 Platinum and platinum silicide contacts on .beta.-silicon carbide Nov. 28, 1995
5270252 Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide Dec. 14, 1993
5087322 Selective metallization for high temperature semiconductors Feb. 11, 1992











 
 
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