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Class Information
Number: 257/E21.064
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Making electrode (epo) > Schottky electrode (epo)
Description: This subclass is indented under subclass E21.061. This subclass is substantially the same in scope as ECLA classification H01L21/04H10C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7326974 |
Sensor for measuring a gas concentration or ion concentration |
Feb. 5, 2008 |
| 7268027 |
Method of manufacturing photoreceiver |
Sep. 11, 2007 |
| 7135420 |
Semiconductor device and manufacturing method thereof |
Nov. 14, 2006 |
| 6936850 |
Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material |
Aug. 30, 2005 |
| 6905916 |
Method for processing a surface of an SiC semiconductor layer and Schottky contact |
Jun. 14, 2005 |
| 6784114 |
Monatomic layer passivation of semiconductor surfaces |
Aug. 31, 2004 |
| 6703276 |
Passivated silicon carbide devices with low leakage current and method of fabricating |
Mar. 9, 2004 |
| 6562706 |
Structure and manufacturing method of SiC dual metal trench Schottky diode |
May. 13, 2003 |
| 6544674 |
Stable electrical contact for silicon carbide devices |
Apr. 8, 2003 |
| 6410460 |
Technology for thermodynamically stable contacts for binary wide band gap semiconductors |
Jun. 25, 2002 |
| 6388272 |
W/WC/TAC ohmic and rectifying contacts on SiC |
May. 14, 2002 |
| 6373076 |
Passivated silicon carbide devices with low leakage current and method of fabricating |
Apr. 16, 2002 |
| 6274889 |
Method for forming ohmic electrode, and semiconductor device |
Aug. 14, 2001 |
| 6273950 |
SiC device and method for manufacturing the same |
Aug. 14, 2001 |
| 6214107 |
Method for manufacturing a SiC device |
Apr. 10, 2001 |
| 6150246 |
Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC |
Nov. 21, 2000 |
| 6139624 |
Process for producing an electrical contact on a SIC surface |
Oct. 31, 2000 |
| 6110813 |
Method for forming an ohmic electrode |
Aug. 29, 2000 |
| 6002148 |
Silicon carbide transistor and method |
Dec. 14, 1999 |
| 5929523 |
Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
Jul. 27, 1999 |
| 5885860 |
Silicon carbide transistor and method |
Mar. 23, 1999 |
| 5471072 |
Platinum and platinum silicide contacts on .beta.-silicon carbide |
Nov. 28, 1995 |
| 5270252 |
Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide |
Dec. 14, 1993 |
| 5087322 |
Selective metallization for high temperature semiconductors |
Feb. 11, 1992 |
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