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Class Information
Number: 257/E21.063
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Making electrode (epo) > Conductor-insulator-semiconductor electrode, e.g., mis contact (epo)
Description: This subclass is indented under subclass E21.061. This subclass is substantially the same in scope as ECLA classification H01L21/04H10B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8461632 SiC semiconductor device and method of manufacturing the same Jun. 11, 2013
8435878 Field effect transistor device and fabrication May. 7, 2013
8377812 SiC MOSFETs and self-aligned fabrication methods thereof Feb. 19, 2013
8026145 Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering Sep. 27, 2011
7514756 Semiconductor device with MISFET Apr. 7, 2009
7361555 Trench-gate transistors and their manufacture Apr. 22, 2008
7338869 Semiconductor device and its manufacturing method Mar. 4, 2008
7315051 Method of forming a source/drain and a transistor employing the same Jan. 1, 2008
7235438 Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects Jun. 26, 2007
7074643 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same Jul. 11, 2006
7022378 Nitrogen passivation of interface states in SiO.sub.2/SiC structures Apr. 4, 2006
6998322 Methods of fabricating high voltage, high temperature capacitor and interconnection structures Feb. 14, 2006
6974751 Semiconductor device and method for producing the same Dec. 13, 2005
6972436 High voltage, high temperature capacitor and interconnection structures Dec. 6, 2005
6956238 SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS Oct. 18, 2005
6841436 Method of fabricating SiC semiconductor device Jan. 11, 2005
6815299 Method for manufacturing silicon carbide device using water rich anneal Nov. 9, 2004
6812102 Semiconductor device manufacturing method Nov. 2, 2004
6770912 Semiconductor device and method for producing the same Aug. 3, 2004
6767843 Method of N2O growth of an oxide layer on a silicon carbide layer Jul. 27, 2004
6764963 Manufacturing method of semiconductor devices Jul. 20, 2004
6737677 Wide bandgap semiconductor device and method for manufacturing the same May. 18, 2004
6667102 Silicon layer highly sensitive to oxygen and method for obtaining same Dec. 23, 2003
6610366 Method of N2O annealing an oxide layer on a silicon carbide layer Aug. 26, 2003
6589337 Method of producing silicon carbide device by cleaning silicon carbide substrate with oxygen gas Jul. 8, 2003
6559068 Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor May. 6, 2003
6528373 Layered dielectric on silicon carbide semiconductor structures Mar. 4, 2003
6482704 Method of manufacturing silicon carbide semiconductor device having oxide film formed thereon with low on-resistances Nov. 19, 2002
6452228 Silicon carbide semiconductor device Sep. 17, 2002
6448581 Mitigation of deleterious effects of micropipes in silicon carbide devices Sep. 10, 2002
6437371 Layered dielectric on silicon carbide semiconductor structures Aug. 20, 2002
6407014 Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices Jun. 18, 2002
6265326 Method for forming thermal oxide film of silicon carbide semiconductor device Jul. 24, 2001
6246076 Layered dielectric on silicon carbide semiconductor structures Jun. 12, 2001
6228720 Method for making insulated-gate semiconductor element May. 8, 2001
6165822 Silicon carbide semiconductor device and method of manufacturing the same Dec. 26, 2000
6136727 Method for forming thermal oxide film of silicon carbide semiconductor device Oct. 24, 2000
6117751 Method for manufacturing a mis structure on silicon carbide (SiC) Sep. 12, 2000
6028012 Process for forming a gate-quality insulating layer on a silicon carbide substrate Feb. 22, 2000
5972801 Process for reducing defects in oxide layers on silicon carbide Oct. 26, 1999
5776837 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Jul. 7, 1998
5742076 Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance Apr. 21, 1998
5723376 Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects Mar. 3, 1998
5698472 Method and a device for oxidation of a semiconductor layer of SIC Dec. 16, 1997
5629531 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures May. 13, 1997
5612260 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Mar. 18, 1997
5459107 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Oct. 17, 1995
5427985 Amorphous, hydrogenated carbon as an insulator in device fabrication Jun. 27, 1995
5272107 Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) device Dec. 21, 1993











 
 
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