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Class Information
Number: 257/E21.062
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Making electrode (epo) > Ohmic electrode (epo)
Description: This subclass is indented under subclass E21.061. This subclass is substantially the same in scope as ECLA classification H01L21/04H10A.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8653565 Mixed mode multiple switch integration of multiple compound semiconductor FET devices Feb. 18, 2014
8637339 Diode energy converter for chemical kinetic electron energy transfer Jan. 28, 2014
8623752 Ohmic electrode for SiC semiconductor, method of manufacturing ohmic electrode for SiC semiconductor, semiconductor device, and method of manufacturing semiconductor device Jan. 7, 2014
8518729 Method for manufacturing liquid crystal display panel Aug. 27, 2013
8329556 Localized annealing during semiconductor device fabrication Dec. 11, 2012
8324704 Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same Dec. 4, 2012
8288279 Method for forming conductive contact Oct. 16, 2012
8216929 Method of manufacturing silicon carbide semiconductor device Jul. 10, 2012
7935628 Silicon carbide semiconductor device and method for producing the same May. 3, 2011
7875545 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices Jan. 25, 2011
7858507 Method and system for creating photosensitive array with integrated backplane Dec. 28, 2010
7829374 Silicon carbide semiconductor device and method for manufacturing the same Nov. 9, 2010
7811874 Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device Oct. 12, 2010
7723798 Low power circuit structure with metal gate and high-k dielectric May. 25, 2010
7659628 Contact structure comprising semiconductor and metal islands Feb. 9, 2010
7586131 Transistor array and active-matrix substrate Sep. 8, 2009
7569469 Dielectric nanostructure and method for its manufacture Aug. 4, 2009
7550374 Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devic Jun. 23, 2009
7501673 Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method Mar. 10, 2009
7411219 Uniform contact Aug. 12, 2008
7368822 Copper metalized ohmic contact electrode of compound device May. 6, 2008
7338898 MOS transistor and fabrication thereof Mar. 4, 2008
7312529 Structure and method for producing multiple size interconnections Dec. 25, 2007
7205220 Gallium nitride based III-V group compound semiconductor device and method of producing the same Apr. 17, 2007
7141498 Method of forming an ohmic contact in wide band semiconductor Nov. 28, 2006
7135420 Semiconductor device and manufacturing method thereof Nov. 14, 2006
6982440 Silicon carbide semiconductor devices with a regrown contact layer Jan. 3, 2006
6974751 Semiconductor device and method for producing the same Dec. 13, 2005
6955978 Uniform contact Oct. 18, 2005
6936850 Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material Aug. 30, 2005
6909119 Low temperature formation of backside ohmic contacts for vertical devices Jun. 21, 2005
6905916 Method for processing a surface of an SiC semiconductor layer and Schottky contact Jun. 14, 2005
6884644 Low temperature formation of backside ohmic contacts for vertical devices Apr. 26, 2005
6815351 Method for contacting a semiconductor configuration Nov. 9, 2004
6815323 Ohmic contacts on n-type silicon carbide using carbon films Nov. 9, 2004
6803243 Low temperature formation of backside ohmic contacts for vertical devices Oct. 12, 2004
6794684 Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same Sep. 21, 2004
6784114 Monatomic layer passivation of semiconductor surfaces Aug. 31, 2004
6770912 Semiconductor device and method for producing the same Aug. 3, 2004
6770508 Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor Aug. 3, 2004
6764907 Method of fabricating self-aligned silicon carbide semiconductor devices Jul. 20, 2004
6667495 Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration Dec. 23, 2003
6599644 Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide Jul. 29, 2003
6544674 Stable electrical contact for silicon carbide devices Apr. 8, 2003
6468890 Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device Oct. 22, 2002
6410460 Technology for thermodynamically stable contacts for binary wide band gap semiconductors Jun. 25, 2002
6388272 W/WC/TAC ohmic and rectifying contacts on SiC May. 14, 2002
6365919 Silicon carbide junction field effect transistor Apr. 2, 2002
6365494 Method for producing an ohmic contact Apr. 2, 2002
6274889 Method for forming ohmic electrode, and semiconductor device Aug. 14, 2001

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