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Class Information
Number: 257/E21.06
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Changing shape of semiconductor body, e.g., forming recesses (epo)
Description: This subclass is indented under subclass E21.054. This subclass is substantially the same in scope as ECLA classification H01L21/04H6.

Patents under this class:

Patent Number Title Of Patent Date Issued
8685848 Manufacturing method of silicon carbide semiconductor device Apr. 1, 2014
8637931 finFET with merged fins and vertical silicide Jan. 28, 2014
8519486 Semiconductor device having a plurality of phosphorus-doped silicon carbide layers Aug. 27, 2013
8501571 Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus Aug. 6, 2013
8457451 Semiconductor optical element Jun. 4, 2013
8455313 Method for fabricating finFET with merged fins and vertical silicide Jun. 4, 2013
8450165 Semiconductor device having tipless epitaxial source/drain regions May. 28, 2013
8334152 Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate Dec. 18, 2012
8304908 Semiconductor device having a multilevel interconnect structure and method for fabricating the same Nov. 6, 2012
8198675 Silicon carbide semiconductor device and method of manufacturing the same Jun. 12, 2012
8178928 Intermediate structures having reduced width contact holes that are formed during manufacture of memory cells having contact structures May. 15, 2012
8124510 Method of manufacturing a silicon carbide semiconductor device Feb. 28, 2012
8071481 Method for forming highly strained source/drain trenches Dec. 6, 2011
7858481 Method for fabricating transistor with thinned channel Dec. 28, 2010
7547627 Method for manufacturing semiconductor device Jun. 16, 2009
7544611 Method of manufacturing III-V nitride semiconductor device Jun. 9, 2009
7545003 Defect-free source/drain extensions for MOSFETS having germanium based channel regions Jun. 9, 2009
7524722 Resistance type memory device and fabricating method and operating method thereof Apr. 28, 2009
7510977 Method for manufacturing silicon carbide semiconductor device Mar. 31, 2009
7507631 Epitaxial filled deep trench structures Mar. 24, 2009
7494884 SiGe selective growth without a hard mask Feb. 24, 2009
7355255 Nickel silicide including indium and a method of manufacture therefor Apr. 8, 2008
7344985 Nickel alloy silicide including indium and a method of manufacture therefor Mar. 18, 2008
7271050 Silicon nanocrystal capacitor and process for forming same Sep. 18, 2007
7135420 Semiconductor device and manufacturing method thereof Nov. 14, 2006
6391799 Process for fabricating a structure of semiconductor-on-insulator type in particular SiCOI May. 21, 2002
6306773 Method of producing a semiconductor device of SiC Oct. 23, 2001
6273950 SiC device and method for manufacturing the same Aug. 14, 2001
6214107 Method for manufacturing a SiC device Apr. 10, 2001
5912477 High efficiency light emitting diodes Jun. 15, 1999
5631190 Method for producing high efficiency light-emitting diodes and resulting diode structures May. 20, 1997
5571374 Method of etching silicon carbide Nov. 5, 1996
5436174 Method of forming trenches in monocrystalline silicon carbide Jul. 25, 1995
5270244 Method for forming an oxide-filled trench in silicon carbide Dec. 14, 1993
5234537 Dry etching method and its application Aug. 10, 1993
5227034 Method for electrolytic etching of silicon carbide Jul. 13, 1993
4981551 Dry etching of silicon carbide Jan. 1, 1991
4948461 Dry-etching method and plasma Aug. 14, 1990
4865685 Dry etching of silicon carbide Sep. 12, 1989
4735920 Method for structuring silicon carbide Apr. 5, 1988
4595453 Method for etching a semiconductor substrate or layer Jun. 17, 1986
4226666 Etching method employing radiation and noble gas halide Oct. 7, 1980

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