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Class Information
Number: 257/E21.057
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Making n- or p- doped regions or layers, e.g., using diffusion (epo) > Using ion implantation (epo)
Description: This subclass is indented under subclass E21.056. This subclass is substantially the same in scope as ECLA classification H01L21/04H4A.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.059 Angled implantation (epo) 22
257/E21.058 Using masks (epo) 117


Patents under this class:
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Patent Number Title Of Patent Date Issued
8691673 Semiconductor structure with suppressed STI dishing effect at resistor region Apr. 8, 2014
8679957 Method of manufacturing semiconductor device Mar. 25, 2014
8609521 Method of manufacturing semiconductor device Dec. 17, 2013
8597962 Vertical structure LED current spreading by implanted regions Dec. 3, 2013
8519486 Semiconductor device having a plurality of phosphorus-doped silicon carbide layers Aug. 27, 2013
8501571 Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus Aug. 6, 2013
8492250 Method for fabricating semiconductor device Jul. 23, 2013
8435865 Method of manufacturing super-junction semiconductor device May. 7, 2013
8242005 Using multiple masks to form independent features on a workpiece Aug. 14, 2012
8236632 FET structures with trench implantation to improve back channel leakage and body resistance Aug. 7, 2012
8216923 Integrated shadow mask/carrier for patterned ion implantation Jul. 10, 2012
8168519 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces May. 1, 2012
8110897 Semiconductor device with carbon-containing region Feb. 7, 2012
8058156 Plasma immersion ion implantation reactor having multiple ion shower grids Nov. 15, 2011
8039349 Methods for fabricating non-planar semiconductor devices having stress memory Oct. 18, 2011
8026160 Semiconductor device and semiconductor device manufacturing method Sep. 27, 2011
7972946 Plasma treatment method and plasma treatment device Jul. 5, 2011
7968439 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces Jun. 28, 2011
7902031 Method for angular doping of source and drain regions for odd and even NAND blocks Mar. 8, 2011
7898062 Epitaxial semiconductor layer and method Mar. 1, 2011
7880172 Transistors having implanted channels and implanted P-type regions beneath the source region Feb. 1, 2011
7858503 Ion implanted substrate having capping layer and method Dec. 28, 2010
7825015 Method for implanting ions in semiconductor device Nov. 2, 2010
7816199 Method of forming a semiconductor structure comprising an implantation of ions of a non-doping element Oct. 19, 2010
7790588 Dual gate of semiconductor device capable of forming a layer doped in high concentration over a recessed portion of substrate for forming dual gate with recess channel structure and method for Sep. 7, 2010
7790562 Method for angular doping of source and drain regions for odd and even NAND blocks Sep. 7, 2010
7767561 Plasma immersion ion implantation reactor having an ion shower grid Aug. 3, 2010
7759211 Method of fabricating semiconductor device Jul. 20, 2010
7713808 CMOS image sensor and method for fabricating the same May. 11, 2010
7713765 Optical semiconductor device and method for manufacturing the same May. 11, 2010
7705429 Epitaxial semiconductor layer and method Apr. 27, 2010
7675068 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices Mar. 9, 2010
7572716 Semiconductor doping with improved activation Aug. 11, 2009
7550336 Method for fabricating an NMOS transistor Jun. 23, 2009
7534690 Non-volatile memory with asymmetrical doping profile May. 19, 2009
7510986 Production method for semiconductor device Mar. 31, 2009
7489019 Epitaxial semiconductor layer and method Feb. 10, 2009
7442631 Doping method and method of manufacturing field effect transistor Oct. 28, 2008
7301221 Controlling diffusion in doped semiconductor regions Nov. 27, 2007
7297617 Method for controlling diffusion in semiconductor regions Nov. 20, 2007
7262118 Method for generating a structure on a substrate Aug. 28, 2007
7217667 Processes for forming electronic devices including a semiconductor layer May. 15, 2007
7205186 System and method for suppressing oxide formation Apr. 17, 2007
7161220 High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same Jan. 9, 2007
7098120 Method of manufacturing semiconductor devices Aug. 29, 2006
6909119 Low temperature formation of backside ohmic contacts for vertical devices Jun. 21, 2005
6803243 Low temperature formation of backside ohmic contacts for vertical devices Oct. 12, 2004
6703294 Method for producing a region doped with boron in a SiC-layer Mar. 9, 2004
6639273 Silicon carbide n channel MOS semiconductor device and method for manufacturing the same Oct. 28, 2003
6577386 Method and apparatus for activating semiconductor impurities Jun. 10, 2003

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