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Class Information
Number: 257/E21.056
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Making n- or p- doped regions or layers, e.g., using diffusion (epo)
Description: This subclass is indented under subclass E21.054. This subclass is substantially the same in scope as ECLA classification H01L21/04H4.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.057 Using ion implantation (epo) 75

Patents under this class:

Patent Number Title Of Patent Date Issued
8686515 Double-groove bidirectional vertical component Apr. 1, 2014
8604529 Apparatus with photodiode region in multiple epitaxial layers Dec. 10, 2013
8524559 Manufacturing method of power transistor device Sep. 3, 2013
8519486 Semiconductor device having a plurality of phosphorus-doped silicon carbide layers Aug. 27, 2013
8501571 Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus Aug. 6, 2013
8481381 Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures Jul. 9, 2013
8384199 Integrated conductive structures and fabrication methods thereof facilitating implementing a cell phone or other electronic system Feb. 26, 2013
8324631 Silicon carbide semiconductor device and method for manufacturing the same Dec. 4, 2012
8242005 Using multiple masks to form independent features on a workpiece Aug. 14, 2012
8178410 Method for fabricating a semiconductor power device May. 15, 2012
8110897 Semiconductor device with carbon-containing region Feb. 7, 2012
8072043 Semiconductor component Dec. 6, 2011
7999268 Low temperature impurity doping of silicon carbide Aug. 16, 2011
7989329 Removal of surface dopants from a substrate Aug. 2, 2011
7985652 Metal stress memorization technology Jul. 26, 2011
7939388 Plasma doping method and plasma doping apparatus May. 10, 2011
7923341 Higher selectivity, method for passivating short circuit current paths in semiconductor devices Apr. 12, 2011
7919403 Method of manufacturing silicon carbide semiconductor device Apr. 5, 2011
7880172 Transistors having implanted channels and implanted P-type regions beneath the source region Feb. 1, 2011
7867793 Substrate removal during LED formation Jan. 11, 2011
7834452 Device made of single-crystal silicon Nov. 16, 2010
7767572 Methods of forming a barrier layer in an interconnect structure Aug. 3, 2010
7727868 Apparatus and method for controlling diffusion Jun. 1, 2010
7675068 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices Mar. 9, 2010
7622741 Semiconductor device and method for manufacturing same Nov. 24, 2009
7550358 MEMS device including a laterally movable portion with piezo-resistive sensing elements and electrostatic actuating elements on trench side walls, and methods for producing the same Jun. 23, 2009
7514318 Method for fabricating non-volatile memory cells Apr. 7, 2009
7510977 Method for manufacturing silicon carbide semiconductor device Mar. 31, 2009
7501673 Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method Mar. 10, 2009
7449712 CMOS image sensor and method for fabricating the same Nov. 11, 2008
7253533 Divided shadow mask for fabricating organic light emitting diode displays Aug. 7, 2007
7233038 Self masking contact using an angled implant Jun. 19, 2007
7208382 Semiconductor device with high conductivity region using shallow trench Apr. 24, 2007
7192853 Method of improving the breakdown voltage of a diffused semiconductor junction Mar. 20, 2007
7144829 Method for fabricating semiconductor device and semiconductor substrate Dec. 5, 2006
6897133 Method for producing a schottky diode in silicon carbide May. 24, 2005
6864507 MISFET Mar. 8, 2005
6617653 MISFET Sep. 9, 2003
6306211 Method for growing semiconductor film and method for fabricating semiconductor device Oct. 23, 2001
6300228 Multiple precipitation doping process Oct. 9, 2001
6204160 Method for making electrical contacts and junctions in silicon carbide Mar. 20, 2001
6133120 Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same Oct. 17, 2000
6077760 Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics Jun. 20, 2000
5804482 Method for producing a semiconductor device having a semiconductor layer of SiC Sep. 8, 1998
5654208 Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step Aug. 5, 1997

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