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Class Information
Number: 257/E21.055
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo) > Passivating silicon carbide surface (epo)
Description: This subclass is indented under subclass E21.054. This subclass is substantially the same in scope as ECLA classification H01L21/04H2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8536066 Methods of forming SiC MOSFETs with high inversion layer mobility Sep. 17, 2013
8450750 Silicon carbide semiconductor device and method of manufacturing thereof May. 28, 2013
8324704 Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same Dec. 4, 2012
8183573 Process for forming an interface between silicon carbide and silicon oxide with low density of states May. 22, 2012
8119539 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Feb. 21, 2012
7960256 Use of CL2 and/or HCL during silicon epitaxial film formation Jun. 14, 2011
7888256 Process for forming an interface between silicon carbide and silicon oxide with low density of states Feb. 15, 2011
7820534 Method of manufacturing silicon carbide semiconductor device Oct. 26, 2010
7763543 Method for manufacturing silicon carbide semiconductor apparatus Jul. 27, 2010
7727904 Methods of forming SiC MOSFETs with high inversion layer mobility Jun. 1, 2010
7675068 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices Mar. 9, 2010
7598576 Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices Oct. 6, 2009
7572741 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Aug. 11, 2009
7550336 Method for fabricating an NMOS transistor Jun. 23, 2009
7534729 Modification of semiconductor surfaces in a liquid May. 19, 2009
7345309 SiC metal semiconductor field-effect transistor Mar. 18, 2008
7067361 Methods of fabricating silicon carbide metal-semiconductor field effect transistors Jun. 27, 2006
7008886 Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process Mar. 7, 2006
6998322 Methods of fabricating high voltage, high temperature capacitor and interconnection structures Feb. 14, 2006
6972436 High voltage, high temperature capacitor and interconnection structures Dec. 6, 2005
6784114 Monatomic layer passivation of semiconductor surfaces Aug. 31, 2004
6703276 Passivated silicon carbide devices with low leakage current and method of fabricating Mar. 9, 2004
6686616 Silicon carbide metal-semiconductor field effect transistors Feb. 3, 2004
6528373 Layered dielectric on silicon carbide semiconductor structures Mar. 4, 2003
6437371 Layered dielectric on silicon carbide semiconductor structures Aug. 20, 2002
6373076 Passivated silicon carbide devices with low leakage current and method of fabricating Apr. 16, 2002
6344663 Silicon carbide CMOS devices Feb. 5, 2002
6246076 Layered dielectric on silicon carbide semiconductor structures Jun. 12, 2001
6139624 Process for producing an electrical contact on a SIC surface Oct. 31, 2000
6107168 Process for passivating a silicon carbide surface against oxygen Aug. 22, 2000
5925895 Silicon carbide power MESFET with surface effect supressive layer Jul. 20, 1999
5821576 Silicon carbide power field effect transistor Oct. 13, 1998
5776837 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Jul. 7, 1998
5763905 Semiconductor device having a passivation layer Jun. 9, 1998
5698472 Method and a device for oxidation of a semiconductor layer of SIC Dec. 16, 1997
5629531 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures May. 13, 1997
5612260 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Mar. 18, 1997
5459107 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Oct. 17, 1995











 
 
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