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Class Information
Number: 257/E21.054
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo)
Description: This subclass is indented under subclass E21.04. This subclass is substantially the same in scope as ECLA classification H01L21/04H.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7442657 |
Producing stress-relaxed crystalline layer on a substrate |
Oct. 28, 2008 |
| 7416929 |
Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same |
Aug. 26, 2008 |
| 7407837 |
Method of manufacturing silicon carbide semiconductor device |
Aug. 5, 2008 |
| 7399676 |
Silicon carbide semiconductor device and method for manufacturing the same |
Jul. 15, 2008 |
| 7361555 |
Trench-gate transistors and their manufacture |
Apr. 22, 2008 |
| 7297626 |
Process for nickel silicide Ohmic contacts to n-SiC |
Nov. 20, 2007 |
| 7288486 |
Method for manufacturing semiconductor device having via holes |
Oct. 30, 2007 |
| 7247550 |
Silicon carbide-based device contact and contact fabrication method |
Jul. 24, 2007 |
| 7247513 |
Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
Jul. 24, 2007 |
| 7241690 |
Method for conditioning a microelectronics device deposition chamber |
Jul. 10, 2007 |
| 7226805 |
Sequential lithographic methods to reduce stacking fault nucleation sites |
Jun. 5, 2007 |
| 7195963 |
Method for making a semiconductor structure using silicon germanium |
Mar. 27, 2007 |
| 7163882 |
Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications |
Jan. 16, 2007 |
| 7138292 |
Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide |
Nov. 21, 2006 |
| 7135420 |
Semiconductor device and manufacturing method thereof |
Nov. 14, 2006 |
| 7109521 |
Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
Sep. 19, 2006 |
| 7060620 |
Method of preparing a surface of a semiconductor wafer to make it epiready |
Jun. 13, 2006 |
| 7045879 |
Silicon carbide semiconductor device having enhanced carrier mobility |
May. 16, 2006 |
| 7018597 |
High resistivity silicon carbide single crystal |
Mar. 28, 2006 |
| 7009209 |
Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications |
Mar. 7, 2006 |
| 7008886 |
Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process |
Mar. 7, 2006 |
| 6995396 |
Semiconductor substrate, semiconductor device and method for fabricating the same |
Feb. 7, 2006 |
| 6974766 |
In situ deposition of a low .kappa. dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
Dec. 13, 2005 |
| 6951826 |
Silicon carbide deposition for use as a low dielectric constant anti-reflective coating |
Oct. 4, 2005 |
| 6946739 |
Layered semiconductor devices with conductive vias |
Sep. 20, 2005 |
| 6936490 |
Semiconductor wafer and its manufacturing method |
Aug. 30, 2005 |
| 6927144 |
Method for manufacturing buried insulating layer type single crystal silicon carbide substrate |
Aug. 9, 2005 |
| 6794276 |
Methods for fabricating a substrate |
Sep. 21, 2004 |
| 6734461 |
SiC wafer, SiC semiconductor device, and production method of SiC wafer |
May. 11, 2004 |
| 6703276 |
Passivated silicon carbide devices with low leakage current and method of fabricating |
Mar. 9, 2004 |
| 6670693 |
Laser synthesized wide-bandgap semiconductor electronic devices and circuits |
Dec. 30, 2003 |
| 6649497 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Nov. 18, 2003 |
| 6641938 |
Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
Nov. 4, 2003 |
| 6635583 |
Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating |
Oct. 21, 2003 |
| 6616890 |
Fabrication of an electrically conductive silicon carbide article |
Sep. 9, 2003 |
| 6593660 |
Plasma treatment to enhance inorganic dielectric adhesion to copper |
Jul. 15, 2003 |
| 6589337 |
Method of producing silicon carbide device by cleaning silicon carbide substrate with oxygen gas |
Jul. 8, 2003 |
| 6524385 |
Single crystal SiC composite material for producing a semiconductor device, and a method of producing the same |
Feb. 25, 2003 |
| 6515303 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Feb. 4, 2003 |
| 6507046 |
High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage |
Jan. 14, 2003 |
| 6504184 |
Superior silicon carbide integrated circuits and method of fabricating |
Jan. 7, 2003 |
| 6475889 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Nov. 5, 2002 |
| 6448581 |
Mitigation of deleterious effects of micropipes in silicon carbide devices |
Sep. 10, 2002 |
| 6429518 |
Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film |
Aug. 6, 2002 |
| 6407014 |
Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices |
Jun. 18, 2002 |
| 6373076 |
Passivated silicon carbide devices with low leakage current and method of fabricating |
Apr. 16, 2002 |
| 6335535 |
Method for implanting negative hydrogen ion and implanting apparatus |
Jan. 1, 2002 |
| 6329088 |
Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
Dec. 11, 2001 |
| 6309766 |
Polycrystalline silicon carbide ceramic wafer and substrate |
Oct. 30, 2001 |
| 6303508 |
Superior silicon carbide integrated circuits and method of fabricating |
Oct. 16, 2001 |
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