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Class Information
Number: 257/E21.054
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising silicon carbide (sic) (epo)
Description: This subclass is indented under subclass E21.04. This subclass is substantially the same in scope as ECLA classification H01L21/04H.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.06 Changing shape of semiconductor body, e.g., forming recesses (epo) 42
257/E21.061 Making electrode (epo) 18
257/E21.056 Making n- or p- doped regions or layers, e.g., using diffusion (epo) 45
257/E21.065 Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises silicon carbide (epo) 45
257/E21.055 Passivating silicon carbide surface (epo) 38


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8710510 High power insulated gate bipolar transistors Apr. 29, 2014
8703566 Transistors comprising a SiC-containing channel Apr. 22, 2014
8686436 Silicon carbide semiconductor device Apr. 1, 2014
8610131 Silicon carbide insulated-gate bipolar transistor Dec. 17, 2013
8586996 Semiconductor device and method of manufacturing the same Nov. 19, 2013
8563988 Semiconductor element and manufacturing method therefor Oct. 22, 2013
8546923 Rigid power module suited for high-voltage applications Oct. 1, 2013
8519486 Semiconductor device having a plurality of phosphorus-doped silicon carbide layers Aug. 27, 2013
8507922 Silicon carbide substrate, semiconductor device, and SOI wafer Aug. 13, 2013
8501571 Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus Aug. 6, 2013
8497208 Semiconductor device and method for manufacturing the same Jul. 30, 2013
8492827 Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors Jul. 23, 2013
8486835 Czochralski growth of randomly oriented polysilicon and use of randomly oriented polysilicon dummy wafers Jul. 16, 2013
8476646 Light emitting device and light emitting device package Jul. 2, 2013
8466474 Silicon carbide semiconductor device and method of producing silicon carbide semiconductor device Jun. 18, 2013
8455314 Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stage Jun. 4, 2013
8450750 Silicon carbide semiconductor device and method of manufacturing thereof May. 28, 2013
8441027 Light emitting device and light emitting device package May. 14, 2013
8415684 LED device with improved thermal performance Apr. 9, 2013
8415241 Method of manufacturing silicon carbide semiconductor device Apr. 9, 2013
8410488 Micropipe-free silicon carbide and related method of manufacture Apr. 2, 2013
8404536 Method for fabricating stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors Mar. 26, 2013
8389376 Air gap integration scheme Mar. 5, 2013
8390135 Semiconductor device Mar. 5, 2013
8373175 Dual ohmic contact to N- and P-type silicon carbide Feb. 12, 2013
8367536 Method for manufacturing silicon carbide semiconductor device Feb. 5, 2013
8217513 Remote plasma processing of interface surfaces Jul. 10, 2012
8212261 SiC semiconductor device with BPSG insulation film Jul. 3, 2012
8207599 Method and apparatus for directing molding compound flow and resulting semiconductor device packages Jun. 26, 2012
8193622 Thermally enhanced thin semiconductor package Jun. 5, 2012
8183573 Process for forming an interface between silicon carbide and silicon oxide with low density of states May. 22, 2012
8183605 Reducing transistor junction capacitance by recessing drain and source regions May. 22, 2012
8168543 Methods of forming a layer for barrier applications in an interconnect structure May. 1, 2012
8138504 Silicon carbide semiconductor device and method of manufacturing the same Mar. 20, 2012
8134159 Semiconductor device including a p-type transistor having extension regions in sours and drain regions and method of fabricating the same Mar. 13, 2012
8114739 Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same Feb. 14, 2012
8110880 Systems and methods for interconnect metallization using a stop-etch layer Feb. 7, 2012
8105927 Method for manufacturing ion implantation mask, and method for manufacturing silicon carbide semiconductor device Jan. 31, 2012
8084312 Nitrogen based implants for defect reduction in strained silicon Dec. 27, 2011
8084339 Remote plasma processing of interface surfaces Dec. 27, 2011
8067296 Method of manufacturing semiconductor device Nov. 29, 2011
8067776 Method of manufacturing semiconductor device and semiconductor device manufactured thereof Nov. 29, 2011
8058174 Method for treating semiconductor processing components and components formed thereby Nov. 15, 2011
8053784 Silicon carbide semiconductor device and method for manufacturing the same Nov. 8, 2011
8043937 Method for manufacturing semiconductor substrate Oct. 25, 2011
8030184 Epitaxial wafer and method of producing the same Oct. 4, 2011
8013343 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal Sep. 6, 2011
8012818 Method for improving inversion layer mobility in a silicon carbide MOSFET Sep. 6, 2011
8008180 Method of forming an OHMIC contact on a P-type 4H-SIC substrate Aug. 30, 2011
8008668 Doped diamond LED devices and associated methods Aug. 30, 2011

1 2 3 4










 
 
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