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Class Information
Number: 257/E21.052
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (epo) > Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises semiconducting carbon, e.g., diamond, diamond-like carbon (epo) > Device controllable only by variation of electric current supplied or the electric potential applied to electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (epo)
Description: This subclass is indented under subclass E21.049. This subclass is substantially the same in scope as ECLA classification H01L21/04D40C.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.053 Diode (epo) 98


Patents under this class:

Patent Number Title Of Patent Date Issued
8372690 SiP substrate Feb. 12, 2013
8101529 Carbon nanotube resistor, semiconductor device, and manufacturing method thereof Jan. 24, 2012
7968995 Integrated circuit packaging system with package-on-package and method of manufacture thereof Jun. 28, 2011
7700418 Method for production of thin-film semiconductor device Apr. 20, 2010
7592980 Semiconductor device Sep. 22, 2009
7422970 Method for modifying circuit within substrate Sep. 9, 2008
5597762 Field-enhanced diffusion using optical activation Jan. 28, 1997











 
 
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