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Class Information
Number: 257/E21.049
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (epo) > Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises semiconducting carbon, e.g., diamond, diamond-like carbon (epo)
Description: This subclass is indented under subclass E21.041. This subclass is substantially the same in scope as ECLA classification H01L21/04D40.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/E21.05 |
Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal devices such as source, drain, and gate terminals; emitter, base, collector terminals (epo) |
10 |
| 257/E21.052 |
Device controllable only by variation of electric current supplied or the electric potential applied to electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (epo) |
3 |
Patents under this class:
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