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Class Information
Number: 257/E21.049
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (epo) > Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises semiconducting carbon, e.g., diamond, diamond-like carbon (epo)
Description: This subclass is indented under subclass E21.041. This subclass is substantially the same in scope as ECLA classification H01L21/04D40.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.05 Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal devices such as source, drain, and gate terminals; emitter, base, collector terminals (epo) 20
257/E21.052 Device controllable only by variation of electric current supplied or the electric potential applied to electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (epo) 7

Patents under this class:

Patent Number Title Of Patent Date Issued
8535635 Method of manufacturing carbon cylindrical structures and biopolymer detection device Sep. 17, 2013
8518816 Method for making electrical interconnections with carbon nanotubes Aug. 27, 2013
8487356 Graphene device and method of manufacturing the same Jul. 16, 2013
8461028 Synthesizing graphene from metal-carbon solutions using ion implantation Jun. 11, 2013
8435833 Gallium nitride light emitting devices on diamond May. 7, 2013
8421131 Graphene electronic device and method of fabricating the same Apr. 16, 2013
8362568 Recessed contact for multi-gate FET optimizing series resistance Jan. 29, 2013
8278666 Method and apparatus for growing high purity 2H-silicon carbide Oct. 2, 2012
8216904 Strained transistor and method for forming the same Jul. 10, 2012
8212253 Shallow junction formation and high dopant activation rate of MOS devices Jul. 3, 2012
8173526 Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator May. 8, 2012
8158455 Boron-doped diamond semiconductor Apr. 17, 2012
8154084 Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material Apr. 10, 2012
8142838 Method for making liquid crystal display screen Mar. 27, 2012
8119253 Contacts on diamond Feb. 21, 2012
8106430 Preparation of thin film transistors (TFTs) or radio frequency identification (RFID) tags or other printable electronics using ink-jet printer and carbon nanotube inks Jan. 31, 2012
8101980 Graphene device and method of manufacturing the same Jan. 24, 2012
8080441 Growing polygonal carbon from photoresist Dec. 20, 2011
8039301 Gate after diamond transistor Oct. 18, 2011
8021967 Nanoscale wicking methods and devices Sep. 20, 2011
8008669 Programmable anti-fuse structure with DLC dielectric layer Aug. 30, 2011
7989241 Method for making liquid crystal display screen Aug. 2, 2011
7968473 Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants Jun. 28, 2011
7939367 Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate May. 10, 2011
7851802 Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same Dec. 14, 2010
7723180 Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same May. 25, 2010
7695564 Thermal management substrate Apr. 13, 2010
7588990 Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer Sep. 15, 2009
7557378 Boron aluminum nitride diamond heterostructure Jul. 7, 2009
7553693 Method for making a field effect transistor with diamond-like carbon channel and resulting transistor Jun. 30, 2009
7541234 Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas Jun. 2, 2009
7485536 Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers Feb. 3, 2009
7394103 All diamond self-aligned thin film transistor Jul. 1, 2008
7390947 Forming field effect transistors from conductors Jun. 24, 2008
7282425 Structure and method of integrating compound and elemental semiconductors for high-performance CMOS Oct. 16, 2007

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