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Class Information
Number: 257/E21.049
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (epo) > Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises semiconducting carbon, e.g., diamond, diamond-like carbon (epo)
Description: This subclass is indented under subclass E21.041. This subclass is substantially the same in scope as ECLA classification H01L21/04D40.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/E21.05 |
Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal devices such as source, drain, and gate terminals; emitter, base, collector terminals (epo) |
20 |
| 257/E21.052 |
Device controllable only by variation of electric current supplied or the electric potential applied to electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (epo) |
7 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8535635 |
Method of manufacturing carbon cylindrical structures and biopolymer detection device |
Sep. 17, 2013 |
| 8518816 |
Method for making electrical interconnections with carbon nanotubes |
Aug. 27, 2013 |
| 8487356 |
Graphene device and method of manufacturing the same |
Jul. 16, 2013 |
| 8461028 |
Synthesizing graphene from metal-carbon solutions using ion implantation |
Jun. 11, 2013 |
| 8435833 |
Gallium nitride light emitting devices on diamond |
May. 7, 2013 |
| 8421131 |
Graphene electronic device and method of fabricating the same |
Apr. 16, 2013 |
| 8362568 |
Recessed contact for multi-gate FET optimizing series resistance |
Jan. 29, 2013 |
| 8278666 |
Method and apparatus for growing high purity 2H-silicon carbide |
Oct. 2, 2012 |
| 8216904 |
Strained transistor and method for forming the same |
Jul. 10, 2012 |
| 8212253 |
Shallow junction formation and high dopant activation rate of MOS devices |
Jul. 3, 2012 |
| 8173526 |
Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator |
May. 8, 2012 |
| 8158455 |
Boron-doped diamond semiconductor |
Apr. 17, 2012 |
| 8154084 |
Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material |
Apr. 10, 2012 |
| 8142838 |
Method for making liquid crystal display screen |
Mar. 27, 2012 |
| 8119253 |
Contacts on diamond |
Feb. 21, 2012 |
| 8106430 |
Preparation of thin film transistors (TFTs) or radio frequency identification (RFID) tags or other printable electronics using ink-jet printer and carbon nanotube inks |
Jan. 31, 2012 |
| 8101980 |
Graphene device and method of manufacturing the same |
Jan. 24, 2012 |
| 8080441 |
Growing polygonal carbon from photoresist |
Dec. 20, 2011 |
| 8039301 |
Gate after diamond transistor |
Oct. 18, 2011 |
| 8021967 |
Nanoscale wicking methods and devices |
Sep. 20, 2011 |
| 8008669 |
Programmable anti-fuse structure with DLC dielectric layer |
Aug. 30, 2011 |
| 7989241 |
Method for making liquid crystal display screen |
Aug. 2, 2011 |
| 7968473 |
Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants |
Jun. 28, 2011 |
| 7939367 |
Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate |
May. 10, 2011 |
| 7851802 |
Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same |
Dec. 14, 2010 |
| 7723180 |
Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
May. 25, 2010 |
| 7695564 |
Thermal management substrate |
Apr. 13, 2010 |
| 7588990 |
Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer |
Sep. 15, 2009 |
| 7557378 |
Boron aluminum nitride diamond heterostructure |
Jul. 7, 2009 |
| 7553693 |
Method for making a field effect transistor with diamond-like carbon channel and resulting transistor |
Jun. 30, 2009 |
| 7541234 |
Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas |
Jun. 2, 2009 |
| 7485536 |
Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers |
Feb. 3, 2009 |
| 7394103 |
All diamond self-aligned thin film transistor |
Jul. 1, 2008 |
| 7390947 |
Forming field effect transistors from conductors |
Jun. 24, 2008 |
| 7282425 |
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS |
Oct. 16, 2007 |
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