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Class Information
Number: 257/E21.047
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (epo) > Making electrode (epo) > Schottky electrode (epo)
Description: This subclass is indented under subclass E21.045. This subclass is substantially the same in scope as ECLA classification H01L21/04D20C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7449728 |
Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same |
Nov. 11, 2008 |
| 7417271 |
Electrode structure having at least two oxide layers and non-volatile memory device having the same |
Aug. 26, 2008 |
| 7411218 |
Method and device with durable contact on silicon carbide |
Aug. 12, 2008 |
| 7407859 |
Compound semiconductor device and its manufacture |
Aug. 5, 2008 |
| 7371668 |
Method for making a metal oxide semiconductor device |
May. 13, 2008 |
| 7368371 |
Silicon carbide Schottky diode and method of making the same |
May. 6, 2008 |
| 7268027 |
Method of manufacturing photoreceiver |
Sep. 11, 2007 |
| 7250666 |
Schottky barrier diode and method of forming a Schottky barrier diode |
Jul. 31, 2007 |
| 7186625 |
High density MIMCAP with a unit repeatable structure |
Mar. 6, 2007 |
| 6833027 |
Method of manufacturing high voltage schottky diamond diodes with low boron doping |
Dec. 21, 2004 |
| 5869390 |
Method for forming electrode on diamond for electronic devices |
Feb. 9, 1999 |
| 5770467 |
Method for forming electrode on diamond for electronic devices |
Jun. 23, 1998 |
| 5757032 |
Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature |
May. 26, 1998 |
| 5500393 |
Method for fabricating a schottky junction |
Mar. 19, 1996 |
| 5371382 |
Amorphous silicon rectifying contact on diamond and method for making same |
Dec. 6, 1994 |
| 5002899 |
Electrical contacts on diamond |
Mar. 26, 1991 |
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