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Class Information
Number: 257/E21.045
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (epo) > Making electrode (epo)
Description: This subclass is indented under subclass E21.041. This subclass is substantially the same in scope as ECLA classification H01L21/04D20.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.048 Conductor-insulator-semiconductor electrode, e.g., mis contacts (epo) 17
257/E21.046 Ohmic electrode (epo) 36
257/E21.047 Schottky electrode (epo) 32


Patents under this class:

Patent Number Title Of Patent Date Issued
8476646 Light emitting device and light emitting device package Jul. 2, 2013
8377758 Thin film transistor, array substrate and method for manufacturing the same Feb. 19, 2013
8309968 Schottky diode with diamond rod and method for manufacturing the same Nov. 13, 2012
8242006 Smooth electrode and method of fabricating same Aug. 14, 2012
8158510 Semiconductor device and method of forming IPD on molded substrate Apr. 17, 2012
7868330 Organic electro-luminescence display device and fabricating method thereof Jan. 11, 2011
7632734 Method of fabricating semiconductor device Dec. 15, 2009
7586173 Method and apparatus for using flex circuit technology to create a reference electrode channel Sep. 8, 2009
7279417 Use of metallocenes to inhibit copper oxidation during semiconductor processing Oct. 9, 2007
7180094 Nitride-based light emitting device and method of manufacturing the same Feb. 20, 2007











 
 
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